WO2007100341A2 - Systeme laser a semi-conducteur a plaque a incidence rasante et procede correspondant - Google Patents

Systeme laser a semi-conducteur a plaque a incidence rasante et procede correspondant Download PDF

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Publication number
WO2007100341A2
WO2007100341A2 PCT/US2006/011522 US2006011522W WO2007100341A2 WO 2007100341 A2 WO2007100341 A2 WO 2007100341A2 US 2006011522 W US2006011522 W US 2006011522W WO 2007100341 A2 WO2007100341 A2 WO 2007100341A2
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
laser system
semiconductor laser
gain
gain medium
Prior art date
Application number
PCT/US2006/011522
Other languages
English (en)
Other versions
WO2007100341A3 (fr
Inventor
Anish Goyal
Robin Huang
Original Assignee
Massachusetts Institute Of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute Of Technology filed Critical Massachusetts Institute Of Technology
Publication of WO2007100341A2 publication Critical patent/WO2007100341A2/fr
Publication of WO2007100341A3 publication Critical patent/WO2007100341A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08095—Zig-zag travelling beam through the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/083—Ring lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes

Abstract

L'invention concerne un système laser à semi-conducteur émettant un faisceau laser selon un premier chemin d'émission, en réponse à l'application d'un signal d'excitation à un milieu de gain semi-conducteur planaire. Le milieu de gain semi-conducteur comprend des puits quantiques à l'intérieur d'une cavité. Le faisceau suit un chemin qui s'étend dans la cavité au moins à travers le milieu de gain semi-conducteur, subit une réflexion interne quasi totale à une interface sensiblement parallèle au milieu de gain, retraverse le milieu de gain semi-conducteur, entre dans le substrat semi-conducteur puis ressort dudit substrat.
PCT/US2006/011522 2005-04-29 2006-03-29 Systeme laser a semi-conducteur a plaque a incidence rasante et procede correspondant WO2007100341A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11823305A 2005-04-29 2005-04-29
US11/118,233 2005-04-29

Publications (2)

Publication Number Publication Date
WO2007100341A2 true WO2007100341A2 (fr) 2007-09-07
WO2007100341A3 WO2007100341A3 (fr) 2007-11-15

Family

ID=38308720

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/011522 WO2007100341A2 (fr) 2005-04-29 2006-03-29 Systeme laser a semi-conducteur a plaque a incidence rasante et procede correspondant

Country Status (1)

Country Link
WO (1) WO2007100341A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2477285A1 (fr) 2011-01-18 2012-07-18 Bystronic Laser AG Barre à diodes laser et système laser
CN115459052A (zh) * 2022-10-17 2022-12-09 厦门大学 一种金属包裹的非对称光学谐振腔

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3295911A (en) * 1963-03-15 1967-01-03 Bell Telephone Labor Inc Semiconductor light modulators
EP0342953A2 (fr) * 1988-05-17 1989-11-23 Kokusai Denshin Denwa Kabushiki Kaisha Amplificateur optique à semi-conducteur
US5231642A (en) * 1992-05-08 1993-07-27 Spectra Diode Laboratories, Inc. Semiconductor ring and folded cavity lasers
WO1999008352A1 (fr) * 1997-08-08 1999-02-18 Simakov, Vladimir Alexandrovich Laser a injection
WO2001035504A2 (fr) * 1999-11-10 2001-05-17 Infineon Technologies Ag Ensemble pour laser a grande puissance
WO2003007444A1 (fr) * 2001-07-12 2003-01-23 Textron Systems Corporation Laser en zigzag a semi-conducteur et amplificateur optique
DE10323860A1 (de) * 2003-03-28 2004-11-11 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Herstellungsverfahren
US20050083982A1 (en) * 2003-10-20 2005-04-21 Binoptics Corporation Surface emitting and receiving photonic device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3295911A (en) * 1963-03-15 1967-01-03 Bell Telephone Labor Inc Semiconductor light modulators
EP0342953A2 (fr) * 1988-05-17 1989-11-23 Kokusai Denshin Denwa Kabushiki Kaisha Amplificateur optique à semi-conducteur
US5231642A (en) * 1992-05-08 1993-07-27 Spectra Diode Laboratories, Inc. Semiconductor ring and folded cavity lasers
WO1999008352A1 (fr) * 1997-08-08 1999-02-18 Simakov, Vladimir Alexandrovich Laser a injection
WO2001035504A2 (fr) * 1999-11-10 2001-05-17 Infineon Technologies Ag Ensemble pour laser a grande puissance
WO2003007444A1 (fr) * 2001-07-12 2003-01-23 Textron Systems Corporation Laser en zigzag a semi-conducteur et amplificateur optique
DE10323860A1 (de) * 2003-03-28 2004-11-11 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Herstellungsverfahren
US20050083982A1 (en) * 2003-10-20 2005-04-21 Binoptics Corporation Surface emitting and receiving photonic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2477285A1 (fr) 2011-01-18 2012-07-18 Bystronic Laser AG Barre à diodes laser et système laser
CN115459052A (zh) * 2022-10-17 2022-12-09 厦门大学 一种金属包裹的非对称光学谐振腔

Also Published As

Publication number Publication date
WO2007100341A3 (fr) 2007-11-15

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