DE19882055T1 - MRAM mit ausgerichteten magnetischen Vektoren - Google Patents

MRAM mit ausgerichteten magnetischen Vektoren

Info

Publication number
DE19882055T1
DE19882055T1 DE19882055T DE19882055T DE19882055T1 DE 19882055 T1 DE19882055 T1 DE 19882055T1 DE 19882055 T DE19882055 T DE 19882055T DE 19882055 T DE19882055 T DE 19882055T DE 19882055 T1 DE19882055 T1 DE 19882055T1
Authority
DE
Germany
Prior art keywords
mram
magnetic vectors
aligned magnetic
aligned
vectors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19882055T
Other languages
German (de)
English (en)
Inventor
Jing Shi
Theodore Shu
Saled N Tehrani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE19882055T1 publication Critical patent/DE19882055T1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5616—Multilevel magnetic memory cell using non-magnetic conducting interlayer, e.g. GMR, SV, PSV

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
DE19882055T 1997-02-05 1998-02-03 MRAM mit ausgerichteten magnetischen Vektoren Ceased DE19882055T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/795,488 US5757695A (en) 1997-02-05 1997-02-05 Mram with aligned magnetic vectors
PCT/US1998/001905 WO1998034231A1 (en) 1997-02-05 1998-02-03 Mram with aligned magnetic vectors

Publications (1)

Publication Number Publication Date
DE19882055T1 true DE19882055T1 (de) 2000-02-24

Family

ID=25165646

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19882055T Ceased DE19882055T1 (de) 1997-02-05 1998-02-03 MRAM mit ausgerichteten magnetischen Vektoren

Country Status (4)

Country Link
US (1) US5757695A (https=)
JP (1) JP2001510613A (https=)
DE (1) DE19882055T1 (https=)
WO (1) WO1998034231A1 (https=)

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US6590750B2 (en) 1996-03-18 2003-07-08 International Business Machines Corporation Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
JP4124844B2 (ja) * 1997-10-02 2008-07-23 キヤノン株式会社 磁気薄膜メモリ
US5928952A (en) * 1997-11-05 1999-07-27 Zymark Corporation Scheduled system and method for processing chemical products
US6147900A (en) * 1997-11-06 2000-11-14 Nonvolatile Electronics, Incorporated Spin dependent tunneling memory
US6242770B1 (en) 1998-08-31 2001-06-05 Gary Bela Bronner Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method for forming the same
US6005800A (en) * 1998-11-23 1999-12-21 International Business Machines Corporation Magnetic memory array with paired asymmetric memory cells for improved write margin
US6391483B1 (en) 1999-03-30 2002-05-21 Carnegie Mellon University Magnetic device and method of forming same
DE69935148T2 (de) * 1999-06-25 2007-06-06 Freescale Semiconductors, Inc., Austin Eine magnetoresistive ram speicherzelle mit geringer umschaltfeldstärke
US6391658B1 (en) 1999-10-26 2002-05-21 International Business Machines Corporation Formation of arrays of microelectronic elements
US6205053B1 (en) * 2000-06-20 2001-03-20 Hewlett-Packard Company Magnetically stable magnetoresistive memory element
US6538921B2 (en) * 2000-08-17 2003-03-25 Nve Corporation Circuit selection of magnetic memory cells and related cell structures
US6579625B1 (en) * 2000-10-24 2003-06-17 Motorola, Inc. Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers
JP4458703B2 (ja) 2001-03-16 2010-04-28 株式会社東芝 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置
US6466475B1 (en) 2001-10-31 2002-10-15 Hewlett-Packard Company Uniform magnetic environment for cells in an MRAM array
US6798691B1 (en) 2002-03-07 2004-09-28 Silicon Magnetic Systems Asymmetric dot shape for increasing select-unselect margin in MRAM devices
JP3769241B2 (ja) 2002-03-29 2006-04-19 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
US7095646B2 (en) * 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
JP3684225B2 (ja) * 2002-09-30 2005-08-17 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US6956257B2 (en) * 2002-11-18 2005-10-18 Carnegie Mellon University Magnetic memory element and memory device including same
KR100468861B1 (ko) * 2003-01-07 2005-01-29 삼성전자주식회사 고선택성을 가지는 자기저항 메모리
JP2004296859A (ja) * 2003-03-27 2004-10-21 Renesas Technology Corp 磁気記録素子及び磁気記録素子の製造方法
US6785160B1 (en) * 2003-04-29 2004-08-31 Hewlett-Packard Development Company, L.P. Method of providing stability of a magnetic memory cell
US7274080B1 (en) * 2003-08-22 2007-09-25 International Business Machines Corporation MgO-based tunnel spin injectors
US7029941B2 (en) * 2003-08-25 2006-04-18 Headway Technologies, Inc. Magnetic random access memory designs with controlled magnetic switching mechanism
US6943040B2 (en) * 2003-08-28 2005-09-13 Headway Technologes, Inc. Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
US6929957B2 (en) * 2003-09-12 2005-08-16 Headway Technologies, Inc. Magnetic random access memory designs with patterned and stabilized magnetic shields
US20050141148A1 (en) * 2003-12-02 2005-06-30 Kabushiki Kaisha Toshiba Magnetic memory
US7105372B2 (en) * 2004-01-20 2006-09-12 Headway Technologies, Inc. Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
JP2005317739A (ja) * 2004-04-28 2005-11-10 Toshiba Corp 磁気記憶装置およびその製造方法
US7580228B1 (en) * 2004-05-29 2009-08-25 Lauer Mark A Current perpendicular to plane sensor with non-rectangular sense layer stack
US20060101111A1 (en) * 2004-10-05 2006-05-11 Csi Technology, Inc. Method and apparatus transferring arbitrary binary data over a fieldbus network
US7599156B2 (en) * 2004-10-08 2009-10-06 Kabushiki Kaisha Toshiba Magnetoresistive element having specially shaped ferromagnetic layer
US7355884B2 (en) * 2004-10-08 2008-04-08 Kabushiki Kaisha Toshiba Magnetoresistive element
JP4468258B2 (ja) * 2005-07-15 2010-05-26 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US20070019337A1 (en) * 2005-07-19 2007-01-25 Dmytro Apalkov Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements
US7486552B2 (en) * 2007-05-21 2009-02-03 Grandis, Inc. Method and system for providing a spin transfer device with improved switching characteristics
WO2008154519A1 (en) * 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448438A (en) * 1965-03-19 1969-06-03 Hughes Aircraft Co Thin film nondestructive memory
US4731757A (en) * 1986-06-27 1988-03-15 Honeywell Inc. Magnetoresistive memory including thin film storage cells having tapered ends
JPH0721848B2 (ja) * 1987-02-17 1995-03-08 シーゲイト テクノロジー インターナショナル 磁気抵抗センサ及びその製造方法
JPH01149285A (ja) * 1987-12-04 1989-06-12 Hitachi Ltd 磁性薄膜記憶素子
US5420819A (en) * 1992-09-24 1995-05-30 Nonvolatile Electronics, Incorporated Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
US5343422A (en) * 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
DE4327458C2 (de) * 1993-08-16 1996-09-05 Inst Mikrostrukturtechnologie Sensorchip zur hochauflösenden Messung der magnetischen Feldstärke
JPH0766033A (ja) * 1993-08-30 1995-03-10 Mitsubishi Electric Corp 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ

Also Published As

Publication number Publication date
US5757695A (en) 1998-05-26
JP2001510613A (ja) 2001-07-31
WO1998034231A1 (en) 1998-08-06

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 8033

8131 Rejection