DE19834160A1 - Halbleiterkomponente und entsprechendes Herstellungsverfahren - Google Patents

Halbleiterkomponente und entsprechendes Herstellungsverfahren

Info

Publication number
DE19834160A1
DE19834160A1 DE19834160A DE19834160A DE19834160A1 DE 19834160 A1 DE19834160 A1 DE 19834160A1 DE 19834160 A DE19834160 A DE 19834160A DE 19834160 A DE19834160 A DE 19834160A DE 19834160 A1 DE19834160 A1 DE 19834160A1
Authority
DE
Germany
Prior art keywords
flag
substrate
hole
electronic
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19834160A
Other languages
German (de)
English (en)
Inventor
Brian A Webb
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE19834160A1 publication Critical patent/DE19834160A1/de
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/411Chip-supporting parts, e.g. die pads
    • H10W70/415Leadframe inner leads serving as die pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/865Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
DE19834160A 1997-08-01 1998-07-29 Halbleiterkomponente und entsprechendes Herstellungsverfahren Ceased DE19834160A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/904,989 US5963782A (en) 1997-08-01 1997-08-01 Semiconductor component and method of manufacture

Publications (1)

Publication Number Publication Date
DE19834160A1 true DE19834160A1 (de) 1999-02-04

Family

ID=25420114

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19834160A Ceased DE19834160A1 (de) 1997-08-01 1998-07-29 Halbleiterkomponente und entsprechendes Herstellungsverfahren

Country Status (3)

Country Link
US (1) US5963782A (https=)
JP (1) JP4326609B2 (https=)
DE (1) DE19834160A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798556A (en) * 1996-03-25 1998-08-25 Motorola, Inc. Sensor and method of fabrication
TW330337B (en) * 1997-05-23 1998-04-21 Siliconware Precision Industries Co Ltd Semiconductor package with detached die pad
DE19728281C1 (de) * 1997-07-02 1998-10-29 Siemens Ag Zwei-Chip-Leistungs-IC mit verbessertem Kurzschlußverhalten
DE19839123C1 (de) * 1998-08-27 1999-11-04 Siemens Ag Mikromechanische Struktur
SG111092A1 (en) 2002-11-15 2005-05-30 St Microelectronics Pte Ltd Semiconductor device package and method of manufacture
US7571647B2 (en) * 2005-08-30 2009-08-11 Oki Semiconductor Co., Ltd. Package structure for an acceleration sensor
EP2015046A1 (en) * 2007-06-06 2009-01-14 Infineon Technologies SensoNor AS Vacuum Sensor
US20130192338A1 (en) * 2012-01-26 2013-08-01 Felix Mayer Portable electronic device
US9772317B2 (en) 2012-07-26 2017-09-26 Sensirion Ag Method for operating a portable electronic device
US9899290B2 (en) * 2016-03-23 2018-02-20 Nxp Usa, Inc. Methods for manufacturing a packaged device with an extended structure for forming an opening in the encapsulant

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6297418A (ja) * 1985-10-23 1987-05-06 Clarion Co Ltd 弾性表面波装置のパツケ−ジ方法
US4942454A (en) * 1987-08-05 1990-07-17 Mitsubishi Denki Kabushiki Kaisha Resin sealed semiconductor device
US5570454A (en) * 1994-06-09 1996-10-29 Hughes Electronics Method for processing speech signals as block floating point numbers in a CELP-based coder using a fixed point processor
US5553014A (en) * 1994-10-31 1996-09-03 Lucent Technologies Inc. Adaptive finite impulse response filtering method and apparatus
US6323550B1 (en) * 1995-06-06 2001-11-27 Analog Devices, Inc. Package for sealing an integrated circuit die
US5907497A (en) * 1995-12-28 1999-05-25 Lucent Technologies Inc. Update block for an adaptive equalizer filter configuration

Also Published As

Publication number Publication date
JP4326609B2 (ja) 2009-09-09
JPH11126865A (ja) 1999-05-11
US5963782A (en) 1999-10-05

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 8033

8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8131 Rejection