DE19817388A1 - Verfahren zum Herstellen von metallisierten Substratmaterialien - Google Patents
Verfahren zum Herstellen von metallisierten SubstratmaterialienInfo
- Publication number
- DE19817388A1 DE19817388A1 DE19817388A DE19817388A DE19817388A1 DE 19817388 A1 DE19817388 A1 DE 19817388A1 DE 19817388 A DE19817388 A DE 19817388A DE 19817388 A DE19817388 A DE 19817388A DE 19817388 A1 DE19817388 A1 DE 19817388A1
- Authority
- DE
- Germany
- Prior art keywords
- nickel
- metal layer
- fluoropolymer
- layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 229920002313 fluoropolymer Polymers 0.000 title claims abstract description 18
- 239000004811 fluoropolymer Substances 0.000 title claims abstract description 18
- 239000004020 conductor Substances 0.000 title claims abstract description 14
- 238000001020 plasma etching Methods 0.000 title claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 claims abstract description 87
- 239000002184 metal Substances 0.000 claims abstract description 87
- 238000000034 method Methods 0.000 claims abstract description 59
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 48
- 230000008569 process Effects 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 16
- 238000001465 metallisation Methods 0.000 claims abstract description 15
- 150000002816 nickel compounds Chemical class 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 238000000576 coating method Methods 0.000 abstract description 17
- 239000011248 coating agent Substances 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 238000000354 decomposition reaction Methods 0.000 abstract description 4
- 238000010891 electric arc Methods 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 24
- 239000007789 gas Substances 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 229910052763 palladium Inorganic materials 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 10
- 229920006362 Teflon® Polymers 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 230000001464 adherent effect Effects 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- 241000080590 Niso Species 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 5
- 150000002902 organometallic compounds Chemical class 0.000 description 5
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 5
- JVTAAEKCZFNVCJ-REOHCLBHSA-N L-lactic acid Chemical compound C[C@H](O)C(O)=O JVTAAEKCZFNVCJ-REOHCLBHSA-N 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- -1 polytetrafluoroethylene Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical class O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical compound [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- SDWBRBLWPQDUQP-UHFFFAOYSA-N n-boranyl-n-methylmethanamine Chemical compound BN(C)C SDWBRBLWPQDUQP-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 150000001868 cobalt Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical class [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 description 2
- 235000011152 sodium sulphate Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241001124569 Lycaenidae Species 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 241001474977 Palla Species 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical class [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- SLFKPACCQUVAPG-UHFFFAOYSA-N carbon monoxide;nickel;triphenylphosphane Chemical compound O=C=[Ni]=C=O.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 SLFKPACCQUVAPG-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 235000014987 copper Nutrition 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- HUQOFZLCQISTTJ-UHFFFAOYSA-N diethylaminoboron Chemical group CCN([B])CC HUQOFZLCQISTTJ-UHFFFAOYSA-N 0.000 description 1
- 238000000454 electroless metal deposition Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 229910003445 palladium oxide Inorganic materials 0.000 description 1
- JQPTYAILLJKUCY-UHFFFAOYSA-N palladium(ii) oxide Chemical compound [O-2].[Pd+2] JQPTYAILLJKUCY-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 229940074404 sodium succinate Drugs 0.000 description 1
- ZDQYSKICYIVCPN-UHFFFAOYSA-L sodium succinate (anhydrous) Chemical compound [Na+].[Na+].[O-]C(=O)CCC([O-])=O ZDQYSKICYIVCPN-UHFFFAOYSA-L 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/146—By vapour deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/034—Organic insulating material consisting of one material containing halogen
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19817388A DE19817388A1 (de) | 1998-04-20 | 1998-04-20 | Verfahren zum Herstellen von metallisierten Substratmaterialien |
| TW088105767A TW427105B (en) | 1998-04-20 | 1999-04-12 | Method for producing metallized substrate materials |
| AT99926265T ATE242820T1 (de) | 1998-04-20 | 1999-04-15 | Verfahren zum herstellen von metallisierten substratmaterialien |
| EP99926265A EP1080247B1 (de) | 1998-04-20 | 1999-04-15 | Verfahren zum herstellen von metallisierten substratmaterialien |
| DE59905933T DE59905933D1 (de) | 1998-04-20 | 1999-04-15 | Verfahren zum herstellen von metallisierten substratmaterialien |
| KR1020007011488A KR100575424B1 (ko) | 1998-04-20 | 1999-04-15 | 금속화된 기판 물질의 제조 방법 |
| PCT/DE1999/001159 WO1999054525A2 (de) | 1998-04-20 | 1999-04-15 | Verfahren zum herstellen von metallisierten substratmaterialien |
| US09/673,760 US6706201B1 (en) | 1998-04-20 | 1999-04-15 | Method for producing metallized substrate materials |
| JP11111121A JP2000073170A (ja) | 1998-04-20 | 1999-04-19 | 金属化されたサブストレ―ト材料の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19817388A DE19817388A1 (de) | 1998-04-20 | 1998-04-20 | Verfahren zum Herstellen von metallisierten Substratmaterialien |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19817388A1 true DE19817388A1 (de) | 1999-10-28 |
Family
ID=7865060
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19817388A Withdrawn DE19817388A1 (de) | 1998-04-20 | 1998-04-20 | Verfahren zum Herstellen von metallisierten Substratmaterialien |
| DE59905933T Expired - Lifetime DE59905933D1 (de) | 1998-04-20 | 1999-04-15 | Verfahren zum herstellen von metallisierten substratmaterialien |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE59905933T Expired - Lifetime DE59905933D1 (de) | 1998-04-20 | 1999-04-15 | Verfahren zum herstellen von metallisierten substratmaterialien |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6706201B1 (enExample) |
| EP (1) | EP1080247B1 (enExample) |
| JP (1) | JP2000073170A (enExample) |
| KR (1) | KR100575424B1 (enExample) |
| AT (1) | ATE242820T1 (enExample) |
| DE (2) | DE19817388A1 (enExample) |
| TW (1) | TW427105B (enExample) |
| WO (1) | WO1999054525A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004011567A1 (de) * | 2004-03-02 | 2005-09-22 | Ist - Ionen Strahl Technologie Gmbh | Haftfester Verbund und Verfahren zur Herstellung |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002368168A (ja) * | 2001-06-13 | 2002-12-20 | Hitachi Ltd | 半導体装置用複合部材、それを用いた絶縁型半導体装置、又は非絶縁型半導体装置 |
| US20070237977A1 (en) * | 2006-04-07 | 2007-10-11 | United States Of America As Represented By The Administrator Of The National Aeronautics And Spac | Thin Metal Film System To Include Flexible Substrate And Method Of Making Same |
| US8753561B2 (en) * | 2008-06-20 | 2014-06-17 | Baxter International Inc. | Methods for processing substrates comprising metallic nanoparticles |
| US8178120B2 (en) * | 2008-06-20 | 2012-05-15 | Baxter International Inc. | Methods for processing substrates having an antimicrobial coating |
| US8277826B2 (en) | 2008-06-25 | 2012-10-02 | Baxter International Inc. | Methods for making antimicrobial resins |
| US20090324738A1 (en) * | 2008-06-30 | 2009-12-31 | Baxter International Inc. | Methods for making antimicrobial coatings |
| US20100227052A1 (en) * | 2009-03-09 | 2010-09-09 | Baxter International Inc. | Methods for processing substrates having an antimicrobial coating |
| JP6466110B2 (ja) * | 2014-09-09 | 2019-02-06 | 住友電気工業株式会社 | プリント配線板用基板、プリント配線板及びプリント配線板用基板の製造方法 |
| DE102017115407B3 (de) * | 2017-07-10 | 2018-12-20 | Epcos Ag | Herstellungsverfahren für ein MEMS-Bauteil mit Partikelfilter |
| WO2024026176A1 (en) * | 2022-07-26 | 2024-02-01 | The Regents Of The University Of California | Highly selective catalyst composition for the oxidation of alkenes to epoxides |
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| DE3510982A1 (de) * | 1985-03-22 | 1986-09-25 | Schering AG, Berlin und Bergkamen, 1000 Berlin | Herstellung metallischer strukturen auf nichtleitern |
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| US3294059A (en) * | 1963-04-15 | 1966-12-27 | Charles R Barnes | Deposition of nickel films on the interior surface of polytetrafluoroethylene tubing |
| DE3512196A1 (de) * | 1985-04-03 | 1986-10-16 | Hartmann & Braun Ag, 6000 Frankfurt | Verfahren zum aufbringen duenner schichten auf einem substrat |
| GB9405518D0 (en) * | 1994-03-21 | 1994-05-04 | Mupor Ltd | Porous metal composite body |
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1998
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-
1999
- 1999-04-12 TW TW088105767A patent/TW427105B/zh not_active IP Right Cessation
- 1999-04-15 AT AT99926265T patent/ATE242820T1/de not_active IP Right Cessation
- 1999-04-15 US US09/673,760 patent/US6706201B1/en not_active Expired - Fee Related
- 1999-04-15 DE DE59905933T patent/DE59905933D1/de not_active Expired - Lifetime
- 1999-04-15 WO PCT/DE1999/001159 patent/WO1999054525A2/de not_active Ceased
- 1999-04-15 EP EP99926265A patent/EP1080247B1/de not_active Expired - Lifetime
- 1999-04-15 KR KR1020007011488A patent/KR100575424B1/ko not_active Expired - Fee Related
- 1999-04-19 JP JP11111121A patent/JP2000073170A/ja active Pending
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| DE3510982A1 (de) * | 1985-03-22 | 1986-09-25 | Schering AG, Berlin und Bergkamen, 1000 Berlin | Herstellung metallischer strukturen auf nichtleitern |
| DE3744062A1 (de) * | 1987-12-22 | 1989-07-13 | Schering Ag | Verfahren zur herstellung fest haftender metallischer strukturen auf fluor-polymeren und thermoplastischen kunststoffen |
| DE3806587A1 (de) * | 1988-02-26 | 1989-09-07 | Schering Ag | Verfahren zur herstellung fest haftender metallischer strukturen auf polyimid |
| DE4438791A1 (de) * | 1994-10-18 | 1996-04-25 | Atotech Deutschland Gmbh | Verfahren zur Abscheidung von Metallschichten auf Polyimidoberflächen |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004011567A1 (de) * | 2004-03-02 | 2005-09-22 | Ist - Ionen Strahl Technologie Gmbh | Haftfester Verbund und Verfahren zur Herstellung |
| US7955697B2 (en) | 2004-03-02 | 2011-06-07 | Ionen Strahltechnologie GmbH | Adhesive bond and method for the production thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1080247B1 (de) | 2003-06-11 |
| JP2000073170A (ja) | 2000-03-07 |
| WO1999054525A2 (de) | 1999-10-28 |
| KR20010042755A (ko) | 2001-05-25 |
| TW427105B (en) | 2001-03-21 |
| DE59905933D1 (de) | 2003-07-17 |
| KR100575424B1 (ko) | 2006-05-03 |
| ATE242820T1 (de) | 2003-06-15 |
| US6706201B1 (en) | 2004-03-16 |
| WO1999054525A3 (de) | 1999-12-16 |
| EP1080247A2 (de) | 2001-03-07 |
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