DE19781165D2 - Verfahren zur Veränderung der Struktur von dünnen, oberflächennahen Materialschichten - Google Patents

Verfahren zur Veränderung der Struktur von dünnen, oberflächennahen Materialschichten

Info

Publication number
DE19781165D2
DE19781165D2 DE19781165T DE19781165T DE19781165D2 DE 19781165 D2 DE19781165 D2 DE 19781165D2 DE 19781165 T DE19781165 T DE 19781165T DE 19781165 T DE19781165 T DE 19781165T DE 19781165 D2 DE19781165 D2 DE 19781165D2
Authority
DE
Germany
Prior art keywords
changing
material layers
thin material
layers close
close
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19781165T
Other languages
English (en)
Inventor
Jens Christiansen
Horst Strunk
Silke Christiansen
Gerd Hintz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAYERN FREISTAAT
Original Assignee
BAYERN FREISTAAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BAYERN FREISTAAT filed Critical BAYERN FREISTAAT
Priority to DE19781165T priority Critical patent/DE19781165D2/de
Application granted granted Critical
Publication of DE19781165D2 publication Critical patent/DE19781165D2/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D10/00—Modifying the physical properties by methods other than heat treatment or deformation
    • C21D10/005—Modifying the physical properties by methods other than heat treatment or deformation by laser shock processing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F3/00—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D2201/00—Treatment for obtaining particular effects

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Laser Beam Processing (AREA)
DE19781165T 1996-10-18 1997-10-16 Verfahren zur Veränderung der Struktur von dünnen, oberflächennahen Materialschichten Ceased DE19781165D2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19781165T DE19781165D2 (de) 1996-10-18 1997-10-16 Verfahren zur Veränderung der Struktur von dünnen, oberflächennahen Materialschichten

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19643039A DE19643039A1 (de) 1996-10-18 1996-10-18 Verfahren zur Veränderung der Kristallstruktur dünner Zonen sowie zur Kristallisation amorpher Schichten durch Druckwellen
DE19781165T DE19781165D2 (de) 1996-10-18 1997-10-16 Verfahren zur Veränderung der Struktur von dünnen, oberflächennahen Materialschichten
PCT/DE1997/002388 WO1998017831A1 (de) 1996-10-18 1997-10-16 Verfahren zur veränderung der struktur von dünnen, oberflächennahen materialschichten

Publications (1)

Publication Number Publication Date
DE19781165D2 true DE19781165D2 (de) 1999-09-02

Family

ID=7809116

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19643039A Withdrawn DE19643039A1 (de) 1996-10-18 1996-10-18 Verfahren zur Veränderung der Kristallstruktur dünner Zonen sowie zur Kristallisation amorpher Schichten durch Druckwellen
DE19781165T Ceased DE19781165D2 (de) 1996-10-18 1997-10-16 Verfahren zur Veränderung der Struktur von dünnen, oberflächennahen Materialschichten

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19643039A Withdrawn DE19643039A1 (de) 1996-10-18 1996-10-18 Verfahren zur Veränderung der Kristallstruktur dünner Zonen sowie zur Kristallisation amorpher Schichten durch Druckwellen

Country Status (3)

Country Link
AU (1) AU5047698A (de)
DE (2) DE19643039A1 (de)
WO (1) WO1998017831A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6324195B1 (en) * 1999-01-13 2001-11-27 Kaneka Corporation Laser processing of a thin film
DE102004061464B4 (de) 2004-12-17 2008-12-11 Schott Ag Substrat mit feinlaminarer Barriereschutzschicht und Verfahren zu dessen Herstellung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
FR2624138B1 (fr) * 1987-12-02 1993-08-13 Commissariat Energie Atomique Procede de traitement de materiaux par chocs laser
DE3830539A1 (de) * 1988-09-08 1990-03-22 Heraeus Gmbh W C Verfahren zur verbesserung der korrosionsbestaendigkeit von werkstoffen aus silber, palladium und legierungen dieser metalle
DE69020581D1 (de) * 1990-01-11 1995-08-03 Battelle Memorial Institute Verbesserung von materialeigenschaften.
US5473138A (en) * 1993-07-13 1995-12-05 Singh; Rajiv K. Method for increasing the surface area of ceramics, metals and composites
FR2709762B1 (fr) * 1993-09-07 1995-12-08 Aerospatiale Procédé d'application de chocs laser sur un matériau solide cristallin.

Also Published As

Publication number Publication date
WO1998017831A1 (de) 1998-04-30
AU5047698A (en) 1998-05-15
DE19643039A1 (de) 1998-04-23

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8607 Notification of search results after publication
8131 Rejection