AU5047698A - Method for modifying the structure of near-surface thin material layers - Google Patents

Method for modifying the structure of near-surface thin material layers

Info

Publication number
AU5047698A
AU5047698A AU50476/98A AU5047698A AU5047698A AU 5047698 A AU5047698 A AU 5047698A AU 50476/98 A AU50476/98 A AU 50476/98A AU 5047698 A AU5047698 A AU 5047698A AU 5047698 A AU5047698 A AU 5047698A
Authority
AU
Australia
Prior art keywords
modifying
material layers
thin material
surface thin
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU50476/98A
Inventor
Jens Christiansen
Silke Christiansen
Gerd Hintz
Horst Strunk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Freistaat Bayern
Original Assignee
Freistaat Bayern
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freistaat Bayern filed Critical Freistaat Bayern
Publication of AU5047698A publication Critical patent/AU5047698A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D10/00—Modifying the physical properties by methods other than heat treatment or deformation
    • C21D10/005—Modifying the physical properties by methods other than heat treatment or deformation by laser shock processing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F3/00—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D2201/00—Treatment for obtaining particular effects

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Laser Beam Processing (AREA)
AU50476/98A 1996-10-18 1997-10-16 Method for modifying the structure of near-surface thin material layers Abandoned AU5047698A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19643039 1996-10-18
DE19643039A DE19643039A1 (en) 1996-10-18 1996-10-18 Process for changing the crystal structure of thin zones and for crystallizing amorphous layers by pressure waves
PCT/DE1997/002388 WO1998017831A1 (en) 1996-10-18 1997-10-16 Method for modifying the structure of near-surface thin material layers

Publications (1)

Publication Number Publication Date
AU5047698A true AU5047698A (en) 1998-05-15

Family

ID=7809116

Family Applications (1)

Application Number Title Priority Date Filing Date
AU50476/98A Abandoned AU5047698A (en) 1996-10-18 1997-10-16 Method for modifying the structure of near-surface thin material layers

Country Status (3)

Country Link
AU (1) AU5047698A (en)
DE (2) DE19643039A1 (en)
WO (1) WO1998017831A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6324195B1 (en) * 1999-01-13 2001-11-27 Kaneka Corporation Laser processing of a thin film
DE102004061464B4 (en) * 2004-12-17 2008-12-11 Schott Ag Substrate with fine laminar barrier protective layer and method for its production

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
FR2624138B1 (en) * 1987-12-02 1993-08-13 Commissariat Energie Atomique LASER SHOCK MATERIAL PROCESSING PROCESS
DE3830539A1 (en) * 1988-09-08 1990-03-22 Heraeus Gmbh W C Process for improving the corrosion resistance of materials consisting of silver, palladium and alloys of these metals
ES2075435T3 (en) * 1990-01-11 1995-10-01 Battelle Memorial Institute IMPROVING THE PROPERTIES OF MATERIALS.
US5473138A (en) * 1993-07-13 1995-12-05 Singh; Rajiv K. Method for increasing the surface area of ceramics, metals and composites
FR2709762B1 (en) * 1993-09-07 1995-12-08 Aerospatiale Method for applying laser shocks to a crystalline solid material.

Also Published As

Publication number Publication date
DE19643039A1 (en) 1998-04-23
DE19781165D2 (en) 1999-09-02
WO1998017831A1 (en) 1998-04-30

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