DE19780188T1 - Verfahren und Vorrichtung zum Herstellen von Einkristallen - Google Patents

Verfahren und Vorrichtung zum Herstellen von Einkristallen

Info

Publication number
DE19780188T1
DE19780188T1 DE19780188T DE19780188T DE19780188T1 DE 19780188 T1 DE19780188 T1 DE 19780188T1 DE 19780188 T DE19780188 T DE 19780188T DE 19780188 T DE19780188 T DE 19780188T DE 19780188 T1 DE19780188 T1 DE 19780188T1
Authority
DE
Germany
Prior art keywords
single crystals
producing single
producing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19780188T
Other languages
English (en)
Other versions
DE19780188B4 (de
Inventor
Munehiro Yasuda
Shinichi Sakurada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumitomo Sitix Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Sitix Corp filed Critical Sumitomo Sitix Corp
Publication of DE19780188T1 publication Critical patent/DE19780188T1/de
Application granted granted Critical
Publication of DE19780188B4 publication Critical patent/DE19780188B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19780188T 1996-02-08 1997-02-07 Verfahren und Vorrichtung zum Herstellen von Einkristallen Expired - Fee Related DE19780188B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4797896 1996-02-08
JP8/47978 1996-02-08
PCT/JP1997/000309 WO1997029224A1 (fr) 1996-02-08 1997-02-07 Appareil de pousse de monocristal et procede correspondant

Publications (2)

Publication Number Publication Date
DE19780188T1 true DE19780188T1 (de) 1998-04-23
DE19780188B4 DE19780188B4 (de) 2006-03-30

Family

ID=12790412

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19780188T Expired - Fee Related DE19780188B4 (de) 1996-02-08 1997-02-07 Verfahren und Vorrichtung zum Herstellen von Einkristallen

Country Status (4)

Country Link
US (1) US5989341A (de)
JP (1) JP3826472B2 (de)
DE (1) DE19780188B4 (de)
WO (1) WO1997029224A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030050354A (ko) * 2001-12-18 2003-06-25 주식회사 실트론 단결정 실리콘 잉곳 제조 방법
JP5392040B2 (ja) * 2009-12-04 2014-01-22 信越半導体株式会社 単結晶製造装置及び単結晶製造方法
JP6582883B2 (ja) * 2015-10-30 2019-10-02 三菱マテリアル株式会社 多結晶シリコン反応炉

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0791146B2 (ja) * 1987-02-13 1995-10-04 株式会社小松製作所 シリコン単結晶製造用加熱炉
JPS63201089A (ja) * 1987-02-17 1988-08-19 Toshiba Mach Co Ltd シリコン単結晶引上成形機用チヤンバ脱着装置
JPS63315588A (ja) * 1987-06-16 1988-12-23 Nippon Fueroo Furuideikusu Kk 単結晶製造方法及びその装置
JPH02296787A (ja) * 1989-05-11 1990-12-07 Fujitsu Ltd 単結晶育成装置
JP2538748B2 (ja) * 1992-11-27 1996-10-02 信越半導体株式会社 結晶径測定装置
JP3129908B2 (ja) * 1993-04-07 2001-01-31 コマツ電子金属株式会社 大量生産型単結晶引き上げシステム
EP0765954B1 (de) * 1995-09-26 1999-04-28 Balzers und Leybold Deutschland Holding Aktiengesellschaft Kristallziehanlage
DE19539316A1 (de) * 1995-09-26 1997-03-27 Leybold Ag Kristallziehanlage
DE19613282A1 (de) * 1996-04-03 1997-10-09 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
DE19628851A1 (de) * 1996-07-17 1998-01-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines Einkristalls

Also Published As

Publication number Publication date
JPH09278583A (ja) 1997-10-28
US5989341A (en) 1999-11-23
WO1997029224A1 (fr) 1997-08-14
JP3826472B2 (ja) 2006-09-27
DE19780188B4 (de) 2006-03-30

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: SUMITOMO METAL INDUSTRIES, LTD., TOKIO/TOKYO, JP

8127 New person/name/address of the applicant

Owner name: SUMITOMO METAL INDUSTRIES, LTD., OSAKA, JP

8607 Notification of search results after publication
8127 New person/name/address of the applicant

Owner name: SUMITOMO MITSUBISHI SILICON CORP., TOKIO/TOYKO, JP

8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee