DE19727247A1 - Verfahren zur Herstellung einer lithographischen Maskenvorlage und Herstellung von Halbleitervorrichtungen unter Verwendung derselben - Google Patents
Verfahren zur Herstellung einer lithographischen Maskenvorlage und Herstellung von Halbleitervorrichtungen unter Verwendung derselbenInfo
- Publication number
- DE19727247A1 DE19727247A1 DE19727247A DE19727247A DE19727247A1 DE 19727247 A1 DE19727247 A1 DE 19727247A1 DE 19727247 A DE19727247 A DE 19727247A DE 19727247 A DE19727247 A DE 19727247A DE 19727247 A1 DE19727247 A1 DE 19727247A1
- Authority
- DE
- Germany
- Prior art keywords
- mask template
- mask
- lithographic
- features
- dimension
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000007689 inspection Methods 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 48
- 230000009466 transformation Effects 0.000 claims description 17
- 230000009897 systematic effect Effects 0.000 claims description 15
- 238000009499 grossing Methods 0.000 claims description 8
- 238000000844 transformation Methods 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 description 33
- 239000010410 layer Substances 0.000 description 29
- 102100025093 Zinc fingers and homeoboxes protein 2 Human genes 0.000 description 18
- 238000012795 verification Methods 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000013461 design Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 230000003466 anti-cipated effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000003319 supportive effect Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 210000003608 fece Anatomy 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012634 optical imaging Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 108090000623 proteins and genes Proteins 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LGFDNUSAWCHVJN-UHFFFAOYSA-N 2,3-dimethyl-1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C(C)=C(C)C(=O)C2=C1 LGFDNUSAWCHVJN-UHFFFAOYSA-N 0.000 description 1
- 241000571940 Dracula Species 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 241000251131 Sphyrna Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000009491 slugging Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67437896A | 1996-07-02 | 1996-07-02 | |
| US08/792,670 US5849440A (en) | 1996-07-02 | 1997-01-29 | Process for producing and inspecting a lithographic reticle and fabricating semiconductor devices using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19727247A1 true DE19727247A1 (de) | 1998-01-29 |
Family
ID=27101140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19727247A Ceased DE19727247A1 (de) | 1996-07-02 | 1997-06-26 | Verfahren zur Herstellung einer lithographischen Maskenvorlage und Herstellung von Halbleitervorrichtungen unter Verwendung derselben |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5849440A (enExample) |
| JP (1) | JPH1083069A (enExample) |
| DE (1) | DE19727247A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10115290A1 (de) * | 2001-03-28 | 2002-10-31 | Infineon Technologies Ag | Herstellungsverfahren für eine Photomaske für eine integrierte Schaltung und entsprechende Photomaske |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5795688A (en) * | 1996-08-14 | 1998-08-18 | Micron Technology, Inc. | Process for detecting defects in photomasks through aerial image comparisons |
| US6228539B1 (en) | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| US6016357A (en) * | 1997-06-16 | 2000-01-18 | International Business Machines Corporation | Feedback method to repair phase shift masks |
| US6400838B2 (en) * | 1997-07-29 | 2002-06-04 | Kabushiki Kaisha Toshiba | Pattern inspection equipment, pattern inspection method, and storage medium storing pattern inspection program |
| US6370679B1 (en) | 1997-09-17 | 2002-04-09 | Numerical Technologies, Inc. | Data hierarchy layout correction and verification method and apparatus |
| US6757645B2 (en) | 1997-09-17 | 2004-06-29 | Numerical Technologies, Inc. | Visual inspection and verification system |
| US7093229B2 (en) * | 1997-09-17 | 2006-08-15 | Synopsys, Inc. | System and method for providing defect printability analysis of photolithographic masks with job-based automation |
| US7617474B2 (en) * | 1997-09-17 | 2009-11-10 | Synopsys, Inc. | System and method for providing defect printability analysis of photolithographic masks with job-based automation |
| US7107571B2 (en) * | 1997-09-17 | 2006-09-12 | Synopsys, Inc. | Visual analysis and verification system using advanced tools |
| US6453452B1 (en) * | 1997-12-12 | 2002-09-17 | Numerical Technologies, Inc. | Method and apparatus for data hierarchy maintenance in a system for mask description |
| US6578188B1 (en) | 1997-09-17 | 2003-06-10 | Numerical Technologies, Inc. | Method and apparatus for a network-based mask defect printability analysis system |
| US6470489B1 (en) | 1997-09-17 | 2002-10-22 | Numerical Technologies, Inc. | Design rule checking system and method |
| US6072897A (en) * | 1997-09-18 | 2000-06-06 | Applied Materials, Inc. | Dimension error detection in object |
| US6091845A (en) * | 1998-02-24 | 2000-07-18 | Micron Technology, Inc. | Inspection technique of photomask |
| US6466314B1 (en) * | 1998-09-17 | 2002-10-15 | Applied Materials, Inc. | Reticle design inspection system |
| DE19903200B4 (de) * | 1999-01-27 | 2004-02-19 | Infineon Technologies Ag | Verfahren zum Korrigieren des Maskenlayouts bei der Herstellung von Strukturen auf der Oberfläche eines Halbleiterwafers |
| US6654488B1 (en) | 1999-07-01 | 2003-11-25 | International Business Machines Corporation | Fill pattern inspection |
| US6280646B1 (en) | 1999-07-16 | 2001-08-28 | Micron Technology, Inc. | Use of a chemically active reticle carrier for photomask etching |
| EP1184724A1 (en) | 2000-08-29 | 2002-03-06 | Motorola, Inc. | Electronic device for a lithography mask container and method using the same |
| US6792590B1 (en) | 2000-09-29 | 2004-09-14 | Numerical Technologies, Inc. | Dissection of edges with projection points in a fabrication layout for correcting proximity effects |
| US6453457B1 (en) | 2000-09-29 | 2002-09-17 | Numerical Technologies, Inc. | Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout |
| US6625801B1 (en) | 2000-09-29 | 2003-09-23 | Numerical Technologies, Inc. | Dissection of printed edges from a fabrication layout for correcting proximity effects |
| US6539521B1 (en) | 2000-09-29 | 2003-03-25 | Numerical Technologies, Inc. | Dissection of corners in a fabrication layout for correcting proximity effects |
| US6665856B1 (en) | 2000-12-01 | 2003-12-16 | Numerical Technologies, Inc. | Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects |
| US6925202B2 (en) | 2001-03-20 | 2005-08-02 | Synopsys, Inc. | System and method of providing mask quality control |
| US6873720B2 (en) | 2001-03-20 | 2005-03-29 | Synopsys, Inc. | System and method of providing mask defect printability analysis |
| US6789237B1 (en) * | 2001-05-11 | 2004-09-07 | Northwestern University | Efficient model order reduction via multi-point moment matching |
| US6680150B2 (en) * | 2001-05-25 | 2004-01-20 | Agere Systems Inc. | Suppression of side-lobe printing by shape engineering |
| US6617087B1 (en) * | 2001-06-27 | 2003-09-09 | Advanced Micro Devices, Inc. | Use of scatterometry to measure pattern accuracy |
| US6560766B2 (en) | 2001-07-26 | 2003-05-06 | Numerical Technologies, Inc. | Method and apparatus for analyzing a layout using an instance-based representation |
| US6721928B2 (en) | 2001-07-26 | 2004-04-13 | Numerical Technologies, Inc. | Verification utilizing instance-based hierarchy management |
| US7014955B2 (en) * | 2001-08-28 | 2006-03-21 | Synopsys, Inc. | System and method for indentifying dummy features on a mask layer |
| JP2003121983A (ja) * | 2001-10-16 | 2003-04-23 | Dainippon Printing Co Ltd | 付加図形付きフォトマスクの欠陥検査方法 |
| US6976240B2 (en) * | 2001-11-14 | 2005-12-13 | Synopsys Inc. | Simulation using design geometry information |
| US6972576B1 (en) | 2002-05-31 | 2005-12-06 | Advanced Micro Devices, Inc. | Electrical critical dimension measurement and defect detection for reticle fabrication |
| US6818910B2 (en) | 2002-08-23 | 2004-11-16 | Micron Technology, Inc. | Writing methodology to reduce write time, and system for performing same |
| US7043071B2 (en) * | 2002-09-13 | 2006-05-09 | Synopsys, Inc. | Soft defect printability simulation and analysis for masks |
| US6709793B1 (en) | 2002-10-31 | 2004-03-23 | Motorola, Inc. | Method of manufacturing reticles using subresolution test patterns |
| US6964032B2 (en) * | 2003-02-28 | 2005-11-08 | International Business Machines Corporation | Pitch-based subresolution assist feature design |
| US7558419B1 (en) * | 2003-08-14 | 2009-07-07 | Brion Technologies, Inc. | System and method for detecting integrated circuit pattern defects |
| US8751950B2 (en) | 2004-08-17 | 2014-06-10 | Ice Edge Business Solutions Ltd. | Capturing a user's intent in design software |
| US6818362B1 (en) * | 2004-02-19 | 2004-11-16 | Freescale Semiconductor, Inc. | Photolithography reticle design |
| US7166897B2 (en) * | 2004-08-24 | 2007-01-23 | Freescale Semiconductor, Inc. | Method and apparatus for performance enhancement in an asymmetrical semiconductor device |
| US20060043500A1 (en) * | 2004-08-24 | 2006-03-02 | Jian Chen | Transistor structure with stress modification and capacitive reduction feature in a channel direction and method thereof |
| US7161199B2 (en) * | 2004-08-24 | 2007-01-09 | Freescale Semiconductor, Inc. | Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof |
| US7288448B2 (en) * | 2004-08-24 | 2007-10-30 | Orlowski Marius K | Method and apparatus for mobility enhancement in a semiconductor device |
| US7856612B1 (en) * | 2006-09-28 | 2010-12-21 | Gauda, Inc. | Lithography mask design through mask functional optimization and spatial frequency analysis |
| US7910267B1 (en) * | 2008-12-12 | 2011-03-22 | Western Digital (Fremont), Llc | Method and system for providing optical proximity correction for structures such as a PMR nose |
| US9619878B2 (en) * | 2013-04-16 | 2017-04-11 | Kla-Tencor Corporation | Inspecting high-resolution photolithography masks |
| US9323882B2 (en) | 2014-03-28 | 2016-04-26 | Globalfoundries Inc. | Metrology pattern layout and method of use thereof |
| US9535319B2 (en) * | 2015-03-31 | 2017-01-03 | Globalfoundries Inc. | Reticle, system comprising a plurality of reticles and method for the formation thereof |
| DE102017203879B4 (de) | 2017-03-09 | 2023-06-07 | Carl Zeiss Smt Gmbh | Verfahren zum Analysieren einer defekten Stelle einer photolithographischen Maske |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0163471B1 (ko) * | 1994-07-05 | 1998-12-15 | 가네꼬 히사시 | 수정된 조명에 이용되는 포토-마스크 제조 방법, 포토-마스크를 이용하는 투영 정렬기 및 포토-마스크로부터 감광층으로 패턴상을 전사하는 방법 |
| US5553273A (en) * | 1995-04-17 | 1996-09-03 | International Business Machines Corporation | Vertex minimization in a smart optical proximity correction system |
-
1997
- 1997-01-29 US US08/792,670 patent/US5849440A/en not_active Expired - Lifetime
- 1997-06-26 DE DE19727247A patent/DE19727247A1/de not_active Ceased
- 1997-07-02 JP JP19194997A patent/JPH1083069A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10115290A1 (de) * | 2001-03-28 | 2002-10-31 | Infineon Technologies Ag | Herstellungsverfahren für eine Photomaske für eine integrierte Schaltung und entsprechende Photomaske |
| DE10115290B4 (de) * | 2001-03-28 | 2005-06-09 | Infineon Technologies Ag | Herstellungsverfahren für eine Photomaske für eine integrierte Schaltung und entsprechende Photomaske |
Also Published As
| Publication number | Publication date |
|---|---|
| US5849440A (en) | 1998-12-15 |
| JPH1083069A (ja) | 1998-03-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8181 | Inventor (new situation) |
Free format text: LUCAS, KEVIN D., AUSTIN, TEXAS, US KLING, MICHAEL E., ROUND ROCK, TEXAS, US REICH, ALFRED J., AUSTIN, TEXAS, US FU, CHONG-CHENG, AUSTIN, TEXAS, US MORROW, JAMES, AUSTIN, TEXAS, US |
|
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: FREESCALE SEMICONDUCTOR INC. (N.D.GES.D. STAATES D |
|
| 8131 | Rejection |