JPH1083069A - 半導体装置を製造する方法 - Google Patents

半導体装置を製造する方法

Info

Publication number
JPH1083069A
JPH1083069A JP19194997A JP19194997A JPH1083069A JP H1083069 A JPH1083069 A JP H1083069A JP 19194997 A JP19194997 A JP 19194997A JP 19194997 A JP19194997 A JP 19194997A JP H1083069 A JPH1083069 A JP H1083069A
Authority
JP
Japan
Prior art keywords
reticle
lithographic
database
inspection
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19194997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1083069A5 (enExample
Inventor
Kevin D Lucas
ケビン・ディー・ルーカス
Michael E King
マイケル・イー・クリング
Alfred J Reich
アルフレッド・ジェイ・リーチ
Chong-Cheng Fu
チョンチェン・フー
James Morroe
ジェームズ・モロウ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPH1083069A publication Critical patent/JPH1083069A/ja
Publication of JPH1083069A5 publication Critical patent/JPH1083069A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP19194997A 1996-07-02 1997-07-02 半導体装置を製造する方法 Pending JPH1083069A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US67437896A 1996-07-02 1996-07-02
US08/792,670 US5849440A (en) 1996-07-02 1997-01-29 Process for producing and inspecting a lithographic reticle and fabricating semiconductor devices using same
US08/792,670 1997-01-29
US08/674,378 1997-01-29

Publications (2)

Publication Number Publication Date
JPH1083069A true JPH1083069A (ja) 1998-03-31
JPH1083069A5 JPH1083069A5 (enExample) 2005-05-12

Family

ID=27101140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19194997A Pending JPH1083069A (ja) 1996-07-02 1997-07-02 半導体装置を製造する方法

Country Status (3)

Country Link
US (1) US5849440A (enExample)
JP (1) JPH1083069A (enExample)
DE (1) DE19727247A1 (enExample)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795688A (en) * 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6016357A (en) * 1997-06-16 2000-01-18 International Business Machines Corporation Feedback method to repair phase shift masks
US6400838B2 (en) * 1997-07-29 2002-06-04 Kabushiki Kaisha Toshiba Pattern inspection equipment, pattern inspection method, and storage medium storing pattern inspection program
US6578188B1 (en) * 1997-09-17 2003-06-10 Numerical Technologies, Inc. Method and apparatus for a network-based mask defect printability analysis system
US7617474B2 (en) * 1997-09-17 2009-11-10 Synopsys, Inc. System and method for providing defect printability analysis of photolithographic masks with job-based automation
US7093229B2 (en) * 1997-09-17 2006-08-15 Synopsys, Inc. System and method for providing defect printability analysis of photolithographic masks with job-based automation
US6757645B2 (en) 1997-09-17 2004-06-29 Numerical Technologies, Inc. Visual inspection and verification system
US7107571B2 (en) * 1997-09-17 2006-09-12 Synopsys, Inc. Visual analysis and verification system using advanced tools
US6470489B1 (en) 1997-09-17 2002-10-22 Numerical Technologies, Inc. Design rule checking system and method
US6453452B1 (en) 1997-12-12 2002-09-17 Numerical Technologies, Inc. Method and apparatus for data hierarchy maintenance in a system for mask description
US6370679B1 (en) 1997-09-17 2002-04-09 Numerical Technologies, Inc. Data hierarchy layout correction and verification method and apparatus
US6072897A (en) * 1997-09-18 2000-06-06 Applied Materials, Inc. Dimension error detection in object
US6091845A (en) 1998-02-24 2000-07-18 Micron Technology, Inc. Inspection technique of photomask
US6466314B1 (en) * 1998-09-17 2002-10-15 Applied Materials, Inc. Reticle design inspection system
DE19903200B4 (de) * 1999-01-27 2004-02-19 Infineon Technologies Ag Verfahren zum Korrigieren des Maskenlayouts bei der Herstellung von Strukturen auf der Oberfläche eines Halbleiterwafers
US6654488B1 (en) 1999-07-01 2003-11-25 International Business Machines Corporation Fill pattern inspection
US6280646B1 (en) 1999-07-16 2001-08-28 Micron Technology, Inc. Use of a chemically active reticle carrier for photomask etching
EP1184724A1 (en) 2000-08-29 2002-03-06 Motorola, Inc. Electronic device for a lithography mask container and method using the same
US6453457B1 (en) 2000-09-29 2002-09-17 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US6539521B1 (en) 2000-09-29 2003-03-25 Numerical Technologies, Inc. Dissection of corners in a fabrication layout for correcting proximity effects
US6792590B1 (en) * 2000-09-29 2004-09-14 Numerical Technologies, Inc. Dissection of edges with projection points in a fabrication layout for correcting proximity effects
US6625801B1 (en) 2000-09-29 2003-09-23 Numerical Technologies, Inc. Dissection of printed edges from a fabrication layout for correcting proximity effects
US6665856B1 (en) 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects
US6873720B2 (en) * 2001-03-20 2005-03-29 Synopsys, Inc. System and method of providing mask defect printability analysis
US6925202B2 (en) 2001-03-20 2005-08-02 Synopsys, Inc. System and method of providing mask quality control
DE10115290B4 (de) * 2001-03-28 2005-06-09 Infineon Technologies Ag Herstellungsverfahren für eine Photomaske für eine integrierte Schaltung und entsprechende Photomaske
US6789237B1 (en) * 2001-05-11 2004-09-07 Northwestern University Efficient model order reduction via multi-point moment matching
US6680150B2 (en) * 2001-05-25 2004-01-20 Agere Systems Inc. Suppression of side-lobe printing by shape engineering
US6617087B1 (en) * 2001-06-27 2003-09-09 Advanced Micro Devices, Inc. Use of scatterometry to measure pattern accuracy
US6560766B2 (en) 2001-07-26 2003-05-06 Numerical Technologies, Inc. Method and apparatus for analyzing a layout using an instance-based representation
US6721928B2 (en) 2001-07-26 2004-04-13 Numerical Technologies, Inc. Verification utilizing instance-based hierarchy management
US7014955B2 (en) * 2001-08-28 2006-03-21 Synopsys, Inc. System and method for indentifying dummy features on a mask layer
JP2003121983A (ja) * 2001-10-16 2003-04-23 Dainippon Printing Co Ltd 付加図形付きフォトマスクの欠陥検査方法
US6976240B2 (en) * 2001-11-14 2005-12-13 Synopsys Inc. Simulation using design geometry information
US6972576B1 (en) 2002-05-31 2005-12-06 Advanced Micro Devices, Inc. Electrical critical dimension measurement and defect detection for reticle fabrication
US6818910B2 (en) 2002-08-23 2004-11-16 Micron Technology, Inc. Writing methodology to reduce write time, and system for performing same
US7043071B2 (en) * 2002-09-13 2006-05-09 Synopsys, Inc. Soft defect printability simulation and analysis for masks
US6709793B1 (en) 2002-10-31 2004-03-23 Motorola, Inc. Method of manufacturing reticles using subresolution test patterns
US6964032B2 (en) * 2003-02-28 2005-11-08 International Business Machines Corporation Pitch-based subresolution assist feature design
US7558419B1 (en) * 2003-08-14 2009-07-07 Brion Technologies, Inc. System and method for detecting integrated circuit pattern defects
US8751950B2 (en) 2004-08-17 2014-06-10 Ice Edge Business Solutions Ltd. Capturing a user's intent in design software
US6818362B1 (en) * 2004-02-19 2004-11-16 Freescale Semiconductor, Inc. Photolithography reticle design
US7166897B2 (en) * 2004-08-24 2007-01-23 Freescale Semiconductor, Inc. Method and apparatus for performance enhancement in an asymmetrical semiconductor device
US20060043500A1 (en) * 2004-08-24 2006-03-02 Jian Chen Transistor structure with stress modification and capacitive reduction feature in a channel direction and method thereof
US7288448B2 (en) * 2004-08-24 2007-10-30 Orlowski Marius K Method and apparatus for mobility enhancement in a semiconductor device
US7161199B2 (en) * 2004-08-24 2007-01-09 Freescale Semiconductor, Inc. Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof
US7856612B1 (en) * 2006-09-28 2010-12-21 Gauda, Inc. Lithography mask design through mask functional optimization and spatial frequency analysis
US7910267B1 (en) * 2008-12-12 2011-03-22 Western Digital (Fremont), Llc Method and system for providing optical proximity correction for structures such as a PMR nose
US9619878B2 (en) * 2013-04-16 2017-04-11 Kla-Tencor Corporation Inspecting high-resolution photolithography masks
US9323882B2 (en) 2014-03-28 2016-04-26 Globalfoundries Inc. Metrology pattern layout and method of use thereof
US9535319B2 (en) * 2015-03-31 2017-01-03 Globalfoundries Inc. Reticle, system comprising a plurality of reticles and method for the formation thereof
DE102017203879B4 (de) 2017-03-09 2023-06-07 Carl Zeiss Smt Gmbh Verfahren zum Analysieren einer defekten Stelle einer photolithographischen Maske

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0163471B1 (ko) * 1994-07-05 1998-12-15 가네꼬 히사시 수정된 조명에 이용되는 포토-마스크 제조 방법, 포토-마스크를 이용하는 투영 정렬기 및 포토-마스크로부터 감광층으로 패턴상을 전사하는 방법
US5553273A (en) * 1995-04-17 1996-09-03 International Business Machines Corporation Vertex minimization in a smart optical proximity correction system

Also Published As

Publication number Publication date
DE19727247A1 (de) 1998-01-29
US5849440A (en) 1998-12-15

Similar Documents

Publication Publication Date Title
JPH1083069A (ja) 半導体装置を製造する方法
US5804340A (en) Photomask inspection method and inspection tape therefor
US8151220B2 (en) Methods for simulating reticle layout data, inspecting reticle layout data, and generating a process for inspecting reticle layout data
US5795688A (en) Process for detecting defects in photomasks through aerial image comparisons
CN111340762B (zh) 用于预测晶片级缺陷可印性的设备及方法
KR100668192B1 (ko) 고수율의 레티클 형성 방법
US8103086B2 (en) Reticle defect inspection with model-based thin line approaches
US7788629B2 (en) Systems configured to perform a non-contact method for determining a property of a specimen
JP5905009B2 (ja) リソグラフィ上重大な汚染フォトマスク欠陥のウェハ面検出
US9612541B2 (en) Qualifying patterns for microlithography
US20070002322A1 (en) Image inspection method
US6927003B2 (en) Simulation based PSM clear defect repair method and system
US20040243320A1 (en) Visual inspection and verification system
US7469057B2 (en) System and method for inspecting errors on a wafer
US20040225488A1 (en) System and method for examining mask pattern fidelity
EP1031876B1 (en) Method for automated inspection of photomasks
US20010028045A1 (en) Method for repairing MoSi attenuated phase shifting masks
US7930654B2 (en) System and method of correcting errors in SEM-measurements
CN110727170B (zh) 一种光罩的缺陷修复方法及光罩
US7348106B2 (en) Method for repairing a phase shift mask
JPH10115909A (ja) 位相シフトマスクの検査装置及び検査方法
Rosenbusch et al. Mask Inspection: Theories and Principles
CN114911130A (zh) 光罩及其检测方法、装置、设备及介质
TW200424747A (en) Chrome-less mask inspection method

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040628

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040628

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20041217

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050715

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070130

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070703