DE19681191T1 - Vorrichtung und Verfahren zur Analyse von Oberflächenverunreinigungen in einem sehr kleinen Bereich - Google Patents

Vorrichtung und Verfahren zur Analyse von Oberflächenverunreinigungen in einem sehr kleinen Bereich

Info

Publication number
DE19681191T1
DE19681191T1 DE19681191T DE19681191T DE19681191T1 DE 19681191 T1 DE19681191 T1 DE 19681191T1 DE 19681191 T DE19681191 T DE 19681191T DE 19681191 T DE19681191 T DE 19681191T DE 19681191 T1 DE19681191 T1 DE 19681191T1
Authority
DE
Germany
Prior art keywords
analysis
small area
surface contamination
contamination
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19681191T
Other languages
English (en)
Other versions
DE19681191C2 (de
Inventor
Kazuhiko Tabuse
Masao Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Publication of DE19681191T1 publication Critical patent/DE19681191T1/de
Application granted granted Critical
Publication of DE19681191C2 publication Critical patent/DE19681191C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/08—Electron sources, e.g. for generating photo-electrons, secondary electrons or Auger electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • H01J49/142—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2511—Auger spectrometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2516—Secondary particles mass or energy spectrometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H01J37/256—Tubes for spot-analysing by electron or ion beams; Microanalysers using scanning beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE19681191T 1995-11-21 1996-11-21 Verfahren zur Analyse von Oberflächenverunreinigungen in einem sehr kleinen Bereich Expired - Fee Related DE19681191C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30288995 1995-11-21
PCT/JP1996/003406 WO1997019343A1 (fr) 1995-11-21 1996-11-21 Procede et appareil pour analyser des impuretes de surface, sur une toute petite zone

Publications (2)

Publication Number Publication Date
DE19681191T1 true DE19681191T1 (de) 1998-08-20
DE19681191C2 DE19681191C2 (de) 2000-04-06

Family

ID=17914329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681191T Expired - Fee Related DE19681191C2 (de) 1995-11-21 1996-11-21 Verfahren zur Analyse von Oberflächenverunreinigungen in einem sehr kleinen Bereich

Country Status (4)

Country Link
US (1) US5877496A (de)
DE (1) DE19681191C2 (de)
GB (1) GB2312291B (de)
WO (1) WO1997019343A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3405506B2 (ja) * 1997-03-24 2003-05-12 学校法人トヨタ学園 走査プロトン顕微鏡
JPH11102654A (ja) * 1997-09-26 1999-04-13 Nec Corp 元素分析方法及び元素分析装置
JP4738610B2 (ja) * 2001-03-02 2011-08-03 株式会社トプコン 基板表面の汚染評価方法及び汚染評価装置と半導体装置の製造方法
US8283631B2 (en) * 2008-05-08 2012-10-09 Kla-Tencor Corporation In-situ differential spectroscopy
GB2460855B (en) * 2008-06-11 2013-02-27 Kratos Analytical Ltd Electron spectroscopy
JP2012021775A (ja) * 2010-07-12 2012-02-02 Hitachi Ltd 微小試料分析装置及び方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393311A (en) * 1980-06-13 1983-07-12 Bell Telephone Laboratories, Incorporated Method and apparatus for surface characterization and process control utilizing radiation from desorbed particles
JPS58165968U (ja) * 1982-04-30 1983-11-05 株式会社島津製作所 電子線走査型分析装置
JPS6269527A (ja) * 1985-09-24 1987-03-30 Hitachi Ltd 検査装置
US4968888A (en) * 1989-07-05 1990-11-06 The United States Of America As Represented By The United States Department Of Energy Pulsed field sample neutralization
US5650616A (en) * 1992-04-14 1997-07-22 Olympus Optical Co., Ltd. Apparatus and method for analyzing surface
US5352330A (en) * 1992-09-30 1994-10-04 Texas Instruments Incorporated Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption
JPH07243999A (ja) * 1994-03-01 1995-09-19 Toshiba Corp 電子ビーム検査装置

Also Published As

Publication number Publication date
GB9715235D0 (en) 1997-09-24
US5877496A (en) 1999-03-02
GB2312291B (en) 2000-01-19
DE19681191C2 (de) 2000-04-06
GB2312291A (en) 1997-10-22
WO1997019343A1 (fr) 1997-05-29

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8607 Notification of search results after publication
8607 Notification of search results after publication
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee