DE1965407A1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE1965407A1
DE1965407A1 DE19691965407 DE1965407A DE1965407A1 DE 1965407 A1 DE1965407 A1 DE 1965407A1 DE 19691965407 DE19691965407 DE 19691965407 DE 1965407 A DE1965407 A DE 1965407A DE 1965407 A1 DE1965407 A1 DE 1965407A1
Authority
DE
Germany
Prior art keywords
emitter
zone
sections
common
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691965407
Other languages
German (de)
English (en)
Inventor
Morgan Ian Hambry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1965407A1 publication Critical patent/DE1965407A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
DE19691965407 1969-01-31 1969-12-30 Halbleiteranordnung Pending DE1965407A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB534369 1969-01-31

Publications (1)

Publication Number Publication Date
DE1965407A1 true DE1965407A1 (de) 1970-08-13

Family

ID=9794339

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691965407 Pending DE1965407A1 (de) 1969-01-31 1969-12-30 Halbleiteranordnung

Country Status (4)

Country Link
DE (1) DE1965407A1 (https=)
FR (1) FR2029746B1 (https=)
GB (1) GB1288384A (https=)
NL (1) NL6918915A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3343632A1 (de) * 1982-12-17 1984-06-20 N.V. Philips' Gloeilampenfabrieken, Eindhoven Halbleiteranordnung
DE3926886C2 (de) * 1989-08-16 1999-10-21 Bosch Gmbh Robert In Planartechnologie erstellter Großchip mit Schalttransistoren

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3343632A1 (de) * 1982-12-17 1984-06-20 N.V. Philips' Gloeilampenfabrieken, Eindhoven Halbleiteranordnung
DE3926886C2 (de) * 1989-08-16 1999-10-21 Bosch Gmbh Robert In Planartechnologie erstellter Großchip mit Schalttransistoren

Also Published As

Publication number Publication date
FR2029746A1 (https=) 1970-10-23
NL6918915A (https=) 1970-08-04
FR2029746B1 (https=) 1974-12-06
GB1288384A (https=) 1972-09-06

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