DE19650111B4 - Solarzelle mit geringer Abschattung und Verfahren zur Herstellung - Google Patents

Solarzelle mit geringer Abschattung und Verfahren zur Herstellung Download PDF

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Publication number
DE19650111B4
DE19650111B4 DE19650111A DE19650111A DE19650111B4 DE 19650111 B4 DE19650111 B4 DE 19650111B4 DE 19650111 A DE19650111 A DE 19650111A DE 19650111 A DE19650111 A DE 19650111A DE 19650111 B4 DE19650111 B4 DE 19650111B4
Authority
DE
Germany
Prior art keywords
slots
solar cell
contact pattern
silicon substrate
emitter layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19650111A
Other languages
German (de)
English (en)
Other versions
DE19650111A1 (de
Inventor
Arthur Dr.rer.nat. Endrös
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SolarWorld Industries Deutschland GmbH
Original Assignee
Siemens Solar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE19650111A priority Critical patent/DE19650111B4/de
Application filed by Siemens Solar GmbH filed Critical Siemens Solar GmbH
Priority to ES97950204T priority patent/ES2186011T3/es
Priority to JP52512698A priority patent/JP3924327B2/ja
Priority to RU99114608/28A priority patent/RU2185688C2/ru
Priority to US09/319,397 priority patent/US6143976A/en
Priority to EP97950204A priority patent/EP0948820B1/de
Priority to AU53231/98A priority patent/AU718786B2/en
Priority to PCT/EP1997/006465 priority patent/WO1998025312A1/de
Priority to DE59708512T priority patent/DE59708512D1/de
Publication of DE19650111A1 publication Critical patent/DE19650111A1/de
Application granted granted Critical
Publication of DE19650111B4 publication Critical patent/DE19650111B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/227—Arrangements for electrodes of back-contact photovoltaic cells for emitter wrap-through [EWT] photovoltaic cells, e.g. interdigitated emitter-base back-contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
DE19650111A 1996-12-03 1996-12-03 Solarzelle mit geringer Abschattung und Verfahren zur Herstellung Expired - Fee Related DE19650111B4 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE19650111A DE19650111B4 (de) 1996-12-03 1996-12-03 Solarzelle mit geringer Abschattung und Verfahren zur Herstellung
JP52512698A JP3924327B2 (ja) 1996-12-03 1997-11-19 僅かなシェージングを有する太陽電池およびその製造方法
RU99114608/28A RU2185688C2 (ru) 1996-12-03 1997-11-19 Солнечный элемент с небольшим затенением и способ его изготовления
US09/319,397 US6143976A (en) 1996-12-03 1997-11-19 Solar cell with reduced shading and method of producing the same
ES97950204T ES2186011T3 (es) 1996-12-03 1997-11-19 Celula solar con desvanecimiento reducido y metodo para producir la misma.
EP97950204A EP0948820B1 (de) 1996-12-03 1997-11-19 Solarzelle mit geringer abschattung und verfahren zur herstellung
AU53231/98A AU718786B2 (en) 1996-12-03 1997-11-19 A solar cell with reduced shading and a method of producing same
PCT/EP1997/006465 WO1998025312A1 (de) 1996-12-03 1997-11-19 Solarzelle mit geringer abschattung und verfahren zur herstellung
DE59708512T DE59708512D1 (de) 1996-12-03 1997-11-19 Solarzelle mit geringer abschattung und verfahren zur herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19650111A DE19650111B4 (de) 1996-12-03 1996-12-03 Solarzelle mit geringer Abschattung und Verfahren zur Herstellung

Publications (2)

Publication Number Publication Date
DE19650111A1 DE19650111A1 (de) 1998-06-04
DE19650111B4 true DE19650111B4 (de) 2004-07-01

Family

ID=7813503

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19650111A Expired - Fee Related DE19650111B4 (de) 1996-12-03 1996-12-03 Solarzelle mit geringer Abschattung und Verfahren zur Herstellung
DE59708512T Expired - Fee Related DE59708512D1 (de) 1996-12-03 1997-11-19 Solarzelle mit geringer abschattung und verfahren zur herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59708512T Expired - Fee Related DE59708512D1 (de) 1996-12-03 1997-11-19 Solarzelle mit geringer abschattung und verfahren zur herstellung

Country Status (8)

Country Link
US (1) US6143976A (enExample)
EP (1) EP0948820B1 (enExample)
JP (1) JP3924327B2 (enExample)
AU (1) AU718786B2 (enExample)
DE (2) DE19650111B4 (enExample)
ES (1) ES2186011T3 (enExample)
RU (1) RU2185688C2 (enExample)
WO (1) WO1998025312A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
US7595543B2 (en) 2000-11-29 2009-09-29 Australian National University Semiconductor processing method for increasing usable surface area of a semiconductor wafer
US7828983B2 (en) 2001-11-29 2010-11-09 Transform Solar Pty Ltd Semiconductor texturing process

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DE10045249A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements
JP4726354B2 (ja) * 2001-08-22 2011-07-20 東洋アルミニウム株式会社 ペースト組成物およびそれを用いた太陽電池
US7169669B2 (en) 2001-12-04 2007-01-30 Origin Energy Solar Pty. Ltd. Method of making thin silicon sheets for solar cells
US7152289B2 (en) * 2002-09-25 2006-12-26 Intel Corporation Method for forming bulk resonators silicon <110> substrate
US7649141B2 (en) * 2003-06-30 2010-01-19 Advent Solar, Inc. Emitter wrap-through back contact solar cells on thin silicon wafers
JP4121928B2 (ja) * 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
RU2303831C2 (ru) * 2004-06-21 2007-07-27 Открытое Акционерное Общество "Завод электронных материалов и приборов "Аналог" Паста алюминиевая для кремниевых солнечных элементов
US7101789B2 (en) * 2004-09-13 2006-09-05 General Electric Company Method of wet etching vias and articles formed thereby
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
JP4887504B2 (ja) * 2005-07-04 2012-02-29 国立大学法人東北大学 粒界性格制御多結晶の作製方法
KR101212198B1 (ko) * 2006-04-06 2012-12-13 삼성에스디아이 주식회사 태양 전지
EP1993142A1 (de) * 2007-05-14 2008-11-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Reflektiv beschichtetes Halbleiterbauelement, Verfahren zu dessen Herstellung sowie dessen Verwendung
US8309844B2 (en) * 2007-08-29 2012-11-13 Ferro Corporation Thick film pastes for fire through applications in solar cells
EP2068369A1 (en) 2007-12-03 2009-06-10 Interuniversitair Microelektronica Centrum (IMEC) Photovoltaic cells having metal wrap through and improved passivation
EP2071632B1 (en) * 2007-12-14 2013-02-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thin-film solar cell and process for its manufacture
KR100953618B1 (ko) 2008-01-11 2010-04-20 삼성에스디아이 주식회사 태양 전지
KR100927725B1 (ko) * 2008-01-25 2009-11-18 삼성에스디아이 주식회사 태양 전지 및 이의 제조 방법
WO2009094545A2 (en) * 2008-01-25 2009-07-30 Applied Materials, Inc. Automated solar cell electrical connection apparatus
US20090239363A1 (en) * 2008-03-24 2009-09-24 Honeywell International, Inc. Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes
WO2009148562A1 (en) * 2008-06-04 2009-12-10 Solexant Corp. Thin film solar cells with monolithic integration and backside contact
KR100997113B1 (ko) * 2008-08-01 2010-11-30 엘지전자 주식회사 태양전지 및 그의 제조방법
US20100035422A1 (en) * 2008-08-06 2010-02-11 Honeywell International, Inc. Methods for forming doped regions in a semiconductor material
US8053867B2 (en) * 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) * 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8518170B2 (en) * 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
EP2412030A2 (en) * 2009-03-26 2012-02-01 BP Corporation North America Inc. Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions
WO2010118687A1 (zh) * 2009-04-15 2010-10-21 Zhu Huilong 用于半导体器件制造的基板结构及其制造方法
US8324089B2 (en) * 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US20110048505A1 (en) * 2009-08-27 2011-03-03 Gabriela Bunea Module Level Solution to Solar Cell Polarization Using an Encapsulant with Opened UV Transmission Curve
US8377738B2 (en) 2010-07-01 2013-02-19 Sunpower Corporation Fabrication of solar cells with counter doping prevention
NL2006932C2 (en) 2011-06-14 2012-12-17 Stichting Energie Photovoltaic cell.
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
US9812590B2 (en) 2012-10-25 2017-11-07 Sunpower Corporation Bifacial solar cell module with backside reflector
US9035172B2 (en) 2012-11-26 2015-05-19 Sunpower Corporation Crack resistant solar cell modules
US8796061B2 (en) 2012-12-21 2014-08-05 Sunpower Corporation Module assembly for thin solar cells
US9685571B2 (en) 2013-08-14 2017-06-20 Sunpower Corporation Solar cell module with high electric susceptibility layer
JP6338990B2 (ja) 2014-09-19 2018-06-06 株式会社東芝 多接合型太陽電池

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US5067985A (en) * 1990-06-08 1991-11-26 The United States Of America As Represented By The Secretary Of The Air Force Back-contact vertical-junction solar cell and method
DE4343296A1 (de) * 1993-12-17 1995-06-22 Siemens Ag Neuartige Siliziumhalbleiterscheibe und Verfahren zu ihrer Herstellung

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RU2065227C1 (ru) * 1994-06-01 1996-08-10 Борис Александрович Александров Омический контакт к кремниеву солнечному элементу

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US5067985A (en) * 1990-06-08 1991-11-26 The United States Of America As Represented By The Secretary Of The Air Force Back-contact vertical-junction solar cell and method
DE4343296A1 (de) * 1993-12-17 1995-06-22 Siemens Ag Neuartige Siliziumhalbleiterscheibe und Verfahren zu ihrer Herstellung

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7595543B2 (en) 2000-11-29 2009-09-29 Australian National University Semiconductor processing method for increasing usable surface area of a semiconductor wafer
US7875794B2 (en) 2000-11-29 2011-01-25 Transform Solar Pty Ltd Semiconductor wafer processing to increase the usable planar surface area
US9583668B2 (en) 2000-11-29 2017-02-28 The Australian National University Semiconductor device
US7828983B2 (en) 2001-11-29 2010-11-09 Transform Solar Pty Ltd Semiconductor texturing process
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle

Also Published As

Publication number Publication date
WO1998025312A1 (de) 1998-06-11
EP0948820B1 (de) 2002-10-16
EP0948820A1 (de) 1999-10-13
JP3924327B2 (ja) 2007-06-06
ES2186011T3 (es) 2003-05-01
AU5323198A (en) 1998-06-29
JP2001504996A (ja) 2001-04-10
DE19650111A1 (de) 1998-06-04
DE59708512D1 (de) 2002-11-21
RU2185688C2 (ru) 2002-07-20
US6143976A (en) 2000-11-07
AU718786B2 (en) 2000-04-20

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