DE1964589A1 - Magnetfeld-Detektor - Google Patents
Magnetfeld-DetektorInfo
- Publication number
- DE1964589A1 DE1964589A1 DE19691964589 DE1964589A DE1964589A1 DE 1964589 A1 DE1964589 A1 DE 1964589A1 DE 19691964589 DE19691964589 DE 19691964589 DE 1964589 A DE1964589 A DE 1964589A DE 1964589 A1 DE1964589 A1 DE 1964589A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- magnetic field
- area
- additional
- field detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 77
- 239000012535 impurity Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000011109 contamination Methods 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 16
- 230000004907 flux Effects 0.000 claims description 14
- 230000033001 locomotion Effects 0.000 claims description 9
- 230000035945 sensitivity Effects 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims 4
- 239000000356 contaminant Substances 0.000 claims 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 241001233037 catfish Species 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- IHQKEDIOMGYHEB-UHFFFAOYSA-M sodium dimethylarsinate Chemical class [Na+].C[As](C)([O-])=O IHQKEDIOMGYHEB-UHFFFAOYSA-M 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP85869 | 1968-12-28 | ||
| JP85868 | 1968-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1964589A1 true DE1964589A1 (de) | 1970-09-17 |
Family
ID=26333959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691964589 Pending DE1964589A1 (de) | 1968-12-28 | 1969-12-23 | Magnetfeld-Detektor |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1964589A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2033217A6 (enrdf_load_stackoverflow) |
| GB (1) | GB1289739A (enrdf_load_stackoverflow) |
| NL (1) | NL6919469A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3216147A1 (de) * | 1982-04-30 | 1983-11-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Magnetfeldsensor |
| EP0183261A3 (en) * | 1984-11-28 | 1987-09-09 | Eberhard Tittel | Roof carrier element for a motor vehicle |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2611051B1 (fr) * | 1987-02-12 | 1989-07-21 | Suditec France Sud Innovation | Dispositif de mesure de l'intensite d'un courant electrique alternatif a l'aide d'une sonde a effet hall |
| JPH0311669A (ja) * | 1989-06-08 | 1991-01-18 | Mitsubishi Petrochem Co Ltd | 磁気トランジスタ |
-
1969
- 1969-12-23 DE DE19691964589 patent/DE1964589A1/de active Pending
- 1969-12-24 GB GB1289739D patent/GB1289739A/en not_active Expired
- 1969-12-29 FR FR6945296A patent/FR2033217A6/fr not_active Expired
- 1969-12-29 NL NL6919469A patent/NL6919469A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3216147A1 (de) * | 1982-04-30 | 1983-11-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Magnetfeldsensor |
| EP0183261A3 (en) * | 1984-11-28 | 1987-09-09 | Eberhard Tittel | Roof carrier element for a motor vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2033217A6 (enrdf_load_stackoverflow) | 1970-12-04 |
| NL6919469A (enrdf_load_stackoverflow) | 1970-06-30 |
| GB1289739A (enrdf_load_stackoverflow) | 1972-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2439875C2 (de) | Halbleiterbauelement mit negativer Widerstandscharakteristik | |
| DE2160427C3 (enrdf_load_stackoverflow) | ||
| DE1284517B (de) | Integrierte Halbleiterschaltung | |
| DE1024640B (de) | Verfahren zur Herstellung von Kristalloden | |
| DE1614300C3 (de) | Feldeffekttransistor mit isolierter Gateelektrode | |
| DE19947020A1 (de) | Kompensationsbauelement mit variabler Ladungsbilanz | |
| DE1130522B (de) | Flaechentransistor mit anlegierten Emitter- und Kollektorelektroden und Legierungs-verfahren zu seiner Herstellung | |
| DE1690068C3 (de) | Magnetisch steuerbares Halbleiterbauelement | |
| DE2702451B2 (de) | Halbleiteranordnung | |
| DE2515457C3 (de) | Differenzverstärker | |
| DE1564151B2 (de) | Verfahren zum Herstellen einer Vielzahl von Feldeffekt-Transistoren | |
| DE1964589A1 (de) | Magnetfeld-Detektor | |
| EP0037005A1 (de) | Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial und Verfahren zu seiner Herstellung | |
| DE2606994C2 (enrdf_load_stackoverflow) | ||
| DE2458735C2 (de) | Transistor mit einem hohen Stromverstärkungsfaktor bei kleinen Kollektorströmen | |
| DE1217502B (de) | Unipolartransistor mit einer als duenne Oberflaechenschicht ausgebildeten stromfuehrenden Zone eines Leitungstyps und Verfahren zum Herstellen | |
| DE1094883B (de) | Flaechentransistor | |
| DE2012945C3 (de) | Halbleiterbauelement | |
| DE1564170A1 (de) | Halbleiterbauelement hoher Schaltgeschwindigkeit und Verfahren zu dessen Herstellung | |
| DE2721744A1 (de) | Heterojonctions-transistor | |
| DE2606885A1 (de) | Halbleiterbauteil | |
| DE2456635C3 (de) | Integrierte Halbleiterschaltung mit negativem Widerstand | |
| DE2407407C2 (de) | Halbleiterbauelement | |
| DE19820474A1 (de) | Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung | |
| DE1614184C3 (de) | Verfahren zum Herstellen eines Halbleiterschaltelements |