DE1960705A1 - Target fuer ein Halbleiter-Dioden-Vidikon und dessen Herstellung - Google Patents

Target fuer ein Halbleiter-Dioden-Vidikon und dessen Herstellung

Info

Publication number
DE1960705A1
DE1960705A1 DE19691960705 DE1960705A DE1960705A1 DE 1960705 A1 DE1960705 A1 DE 1960705A1 DE 19691960705 DE19691960705 DE 19691960705 DE 1960705 A DE1960705 A DE 1960705A DE 1960705 A1 DE1960705 A1 DE 1960705A1
Authority
DE
Germany
Prior art keywords
metal
conductive
mask
diodes
vidicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691960705
Other languages
German (de)
English (en)
Inventor
Werner Dr Veith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19691960705 priority Critical patent/DE1960705A1/de
Priority to NL7016897A priority patent/NL7016897A/xx
Priority to CA099,419A priority patent/CA989462A/en
Priority to GB5715870A priority patent/GB1308707A/en
Priority to US94382A priority patent/US3707657A/en
Priority to FR7043475A priority patent/FR2082993A5/fr
Publication of DE1960705A1 publication Critical patent/DE1960705A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233Manufacture of photoelectric screens or charge-storage screens
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
DE19691960705 1969-12-03 1969-12-03 Target fuer ein Halbleiter-Dioden-Vidikon und dessen Herstellung Pending DE1960705A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE19691960705 DE1960705A1 (de) 1969-12-03 1969-12-03 Target fuer ein Halbleiter-Dioden-Vidikon und dessen Herstellung
NL7016897A NL7016897A (enrdf_load_stackoverflow) 1969-12-03 1970-11-18
CA099,419A CA989462A (en) 1969-12-03 1970-11-30 Television camera tubes
GB5715870A GB1308707A (en) 1969-12-03 1970-12-02 Television camera tubes
US94382A US3707657A (en) 1969-12-03 1970-12-02 Target structure for a vidicon tube and methods of producing the same
FR7043475A FR2082993A5 (enrdf_load_stackoverflow) 1969-12-03 1970-12-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691960705 DE1960705A1 (de) 1969-12-03 1969-12-03 Target fuer ein Halbleiter-Dioden-Vidikon und dessen Herstellung

Publications (1)

Publication Number Publication Date
DE1960705A1 true DE1960705A1 (de) 1971-06-09

Family

ID=5752880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691960705 Pending DE1960705A1 (de) 1969-12-03 1969-12-03 Target fuer ein Halbleiter-Dioden-Vidikon und dessen Herstellung

Country Status (6)

Country Link
US (1) US3707657A (enrdf_load_stackoverflow)
CA (1) CA989462A (enrdf_load_stackoverflow)
DE (1) DE1960705A1 (enrdf_load_stackoverflow)
FR (1) FR2082993A5 (enrdf_load_stackoverflow)
GB (1) GB1308707A (enrdf_load_stackoverflow)
NL (1) NL7016897A (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3828232A (en) * 1972-02-28 1974-08-06 Tokyo Shibaura Electric Co Semiconductor target
CA967220A (en) * 1972-04-04 1975-05-06 Dieter K. Schroder Charge storage target and method of manufacture
US3810796A (en) * 1972-08-31 1974-05-14 Texas Instruments Inc Method of forming dielectrically isolated silicon diode array vidicon target
US3805126A (en) * 1972-10-11 1974-04-16 Westinghouse Electric Corp Charge storage target and method of manufacture having a plurality of isolated charge storage sites
US3894259A (en) * 1973-01-08 1975-07-08 Block Engineering Mosaic photoelectric target
US3787720A (en) * 1973-03-28 1974-01-22 Hughes Aircraft Co Semiconductor vidicon and process for fabricating same
FR2224748B1 (enrdf_load_stackoverflow) * 1973-04-04 1976-05-21 Telecommunications Sa
US3902095A (en) * 1973-10-09 1975-08-26 Raytheon Co Electron beam semiconductor amplifier with shielded diode junctions
CA1022595A (en) * 1974-04-22 1977-12-13 Alfred B. Laponsky Deep-etch metal cap silicon diode array target with porous caps
US3973270A (en) * 1974-10-30 1976-08-03 Westinghouse Electric Corporation Charge storage target and method of manufacture
US4016590A (en) * 1975-11-07 1977-04-05 Honeywell Inc. Electromagnetic radiation detector
US20150123240A1 (en) * 2013-11-07 2015-05-07 Addison R. Crockett Semiconductor Device and Method of Forming Shallow P-N Junction with Sealed Trench Termination

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432919A (en) * 1966-10-31 1969-03-18 Raytheon Co Method of making semiconductor diodes
US3569758A (en) * 1968-04-18 1971-03-09 Tokyo Shibaura Electric Co Semiconductor photo-electric converting devices having depressions in the semiconductor substrate and image pickup tubes using same
US3581151A (en) * 1968-09-16 1971-05-25 Bell Telephone Labor Inc Cold cathode structure comprising semiconductor whisker elements
NL6816451A (enrdf_load_stackoverflow) * 1968-11-19 1970-05-21

Also Published As

Publication number Publication date
FR2082993A5 (enrdf_load_stackoverflow) 1971-12-10
CA989462A (en) 1976-05-18
GB1308707A (en) 1973-03-07
NL7016897A (enrdf_load_stackoverflow) 1971-06-07
US3707657A (en) 1972-12-26

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