NL7016897A - - Google Patents

Info

Publication number
NL7016897A
NL7016897A NL7016897A NL7016897A NL7016897A NL 7016897 A NL7016897 A NL 7016897A NL 7016897 A NL7016897 A NL 7016897A NL 7016897 A NL7016897 A NL 7016897A NL 7016897 A NL7016897 A NL 7016897A
Authority
NL
Netherlands
Application number
NL7016897A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7016897A publication Critical patent/NL7016897A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233Manufacture of photoelectric screens or charge-storage screens
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
NL7016897A 1969-12-03 1970-11-18 NL7016897A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691960705 DE1960705A1 (de) 1969-12-03 1969-12-03 Target fuer ein Halbleiter-Dioden-Vidikon und dessen Herstellung

Publications (1)

Publication Number Publication Date
NL7016897A true NL7016897A (enrdf_load_stackoverflow) 1971-06-07

Family

ID=5752880

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7016897A NL7016897A (enrdf_load_stackoverflow) 1969-12-03 1970-11-18

Country Status (6)

Country Link
US (1) US3707657A (enrdf_load_stackoverflow)
CA (1) CA989462A (enrdf_load_stackoverflow)
DE (1) DE1960705A1 (enrdf_load_stackoverflow)
FR (1) FR2082993A5 (enrdf_load_stackoverflow)
GB (1) GB1308707A (enrdf_load_stackoverflow)
NL (1) NL7016897A (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3828232A (en) * 1972-02-28 1974-08-06 Tokyo Shibaura Electric Co Semiconductor target
CA967220A (en) * 1972-04-04 1975-05-06 Dieter K. Schroder Charge storage target and method of manufacture
US3810796A (en) * 1972-08-31 1974-05-14 Texas Instruments Inc Method of forming dielectrically isolated silicon diode array vidicon target
US3805126A (en) * 1972-10-11 1974-04-16 Westinghouse Electric Corp Charge storage target and method of manufacture having a plurality of isolated charge storage sites
US3894259A (en) * 1973-01-08 1975-07-08 Block Engineering Mosaic photoelectric target
US3787720A (en) * 1973-03-28 1974-01-22 Hughes Aircraft Co Semiconductor vidicon and process for fabricating same
FR2224748B1 (enrdf_load_stackoverflow) * 1973-04-04 1976-05-21 Telecommunications Sa
US3902095A (en) * 1973-10-09 1975-08-26 Raytheon Co Electron beam semiconductor amplifier with shielded diode junctions
CA1022595A (en) * 1974-04-22 1977-12-13 Alfred B. Laponsky Deep-etch metal cap silicon diode array target with porous caps
US3973270A (en) * 1974-10-30 1976-08-03 Westinghouse Electric Corporation Charge storage target and method of manufacture
US4016590A (en) * 1975-11-07 1977-04-05 Honeywell Inc. Electromagnetic radiation detector
US20150123240A1 (en) * 2013-11-07 2015-05-07 Addison R. Crockett Semiconductor Device and Method of Forming Shallow P-N Junction with Sealed Trench Termination

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432919A (en) * 1966-10-31 1969-03-18 Raytheon Co Method of making semiconductor diodes
US3569758A (en) * 1968-04-18 1971-03-09 Tokyo Shibaura Electric Co Semiconductor photo-electric converting devices having depressions in the semiconductor substrate and image pickup tubes using same
US3581151A (en) * 1968-09-16 1971-05-25 Bell Telephone Labor Inc Cold cathode structure comprising semiconductor whisker elements
NL6816451A (enrdf_load_stackoverflow) * 1968-11-19 1970-05-21

Also Published As

Publication number Publication date
DE1960705A1 (de) 1971-06-09
FR2082993A5 (enrdf_load_stackoverflow) 1971-12-10
CA989462A (en) 1976-05-18
GB1308707A (en) 1973-03-07
US3707657A (en) 1972-12-26

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