GB1308707A - Television camera tubes - Google Patents
Television camera tubesInfo
- Publication number
- GB1308707A GB1308707A GB5715870A GB5715870A GB1308707A GB 1308707 A GB1308707 A GB 1308707A GB 5715870 A GB5715870 A GB 5715870A GB 5715870 A GB5715870 A GB 5715870A GB 1308707 A GB1308707 A GB 1308707A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- trenches
- compound
- width
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000010970 precious metal Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
- H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691960705 DE1960705A1 (de) | 1969-12-03 | 1969-12-03 | Target fuer ein Halbleiter-Dioden-Vidikon und dessen Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1308707A true GB1308707A (en) | 1973-03-07 |
Family
ID=5752880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5715870A Expired GB1308707A (en) | 1969-12-03 | 1970-12-02 | Television camera tubes |
Country Status (6)
Country | Link |
---|---|
US (1) | US3707657A (enrdf_load_stackoverflow) |
CA (1) | CA989462A (enrdf_load_stackoverflow) |
DE (1) | DE1960705A1 (enrdf_load_stackoverflow) |
FR (1) | FR2082993A5 (enrdf_load_stackoverflow) |
GB (1) | GB1308707A (enrdf_load_stackoverflow) |
NL (1) | NL7016897A (enrdf_load_stackoverflow) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3828232A (en) * | 1972-02-28 | 1974-08-06 | Tokyo Shibaura Electric Co | Semiconductor target |
CA967220A (en) * | 1972-04-04 | 1975-05-06 | Dieter K. Schroder | Charge storage target and method of manufacture |
US3810796A (en) * | 1972-08-31 | 1974-05-14 | Texas Instruments Inc | Method of forming dielectrically isolated silicon diode array vidicon target |
US3805126A (en) * | 1972-10-11 | 1974-04-16 | Westinghouse Electric Corp | Charge storage target and method of manufacture having a plurality of isolated charge storage sites |
US3894259A (en) * | 1973-01-08 | 1975-07-08 | Block Engineering | Mosaic photoelectric target |
US3787720A (en) * | 1973-03-28 | 1974-01-22 | Hughes Aircraft Co | Semiconductor vidicon and process for fabricating same |
FR2224748B1 (enrdf_load_stackoverflow) * | 1973-04-04 | 1976-05-21 | Telecommunications Sa | |
US3902095A (en) * | 1973-10-09 | 1975-08-26 | Raytheon Co | Electron beam semiconductor amplifier with shielded diode junctions |
CA1022595A (en) * | 1974-04-22 | 1977-12-13 | Alfred B. Laponsky | Deep-etch metal cap silicon diode array target with porous caps |
US3973270A (en) * | 1974-10-30 | 1976-08-03 | Westinghouse Electric Corporation | Charge storage target and method of manufacture |
US4016590A (en) * | 1975-11-07 | 1977-04-05 | Honeywell Inc. | Electromagnetic radiation detector |
US20150123240A1 (en) * | 2013-11-07 | 2015-05-07 | Addison R. Crockett | Semiconductor Device and Method of Forming Shallow P-N Junction with Sealed Trench Termination |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3432919A (en) * | 1966-10-31 | 1969-03-18 | Raytheon Co | Method of making semiconductor diodes |
US3569758A (en) * | 1968-04-18 | 1971-03-09 | Tokyo Shibaura Electric Co | Semiconductor photo-electric converting devices having depressions in the semiconductor substrate and image pickup tubes using same |
US3581151A (en) * | 1968-09-16 | 1971-05-25 | Bell Telephone Labor Inc | Cold cathode structure comprising semiconductor whisker elements |
NL6816451A (enrdf_load_stackoverflow) * | 1968-11-19 | 1970-05-21 |
-
1969
- 1969-12-03 DE DE19691960705 patent/DE1960705A1/de active Pending
-
1970
- 1970-11-18 NL NL7016897A patent/NL7016897A/xx unknown
- 1970-11-30 CA CA099,419A patent/CA989462A/en not_active Expired
- 1970-12-02 GB GB5715870A patent/GB1308707A/en not_active Expired
- 1970-12-02 US US94382A patent/US3707657A/en not_active Expired - Lifetime
- 1970-12-03 FR FR7043475A patent/FR2082993A5/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1960705A1 (de) | 1971-06-09 |
FR2082993A5 (enrdf_load_stackoverflow) | 1971-12-10 |
CA989462A (en) | 1976-05-18 |
NL7016897A (enrdf_load_stackoverflow) | 1971-06-07 |
US3707657A (en) | 1972-12-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |