DE1933526A1 - Feldeffekt-Transistor - Google Patents
Feldeffekt-TransistorInfo
- Publication number
- DE1933526A1 DE1933526A1 DE19691933526 DE1933526A DE1933526A1 DE 1933526 A1 DE1933526 A1 DE 1933526A1 DE 19691933526 DE19691933526 DE 19691933526 DE 1933526 A DE1933526 A DE 1933526A DE 1933526 A1 DE1933526 A1 DE 1933526A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- transistor
- layer
- bipolar
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001993 dienes Chemical class 0.000 claims 1
- 238000003306 harvesting Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74441668A | 1968-07-12 | 1968-07-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1933526A1 true DE1933526A1 (de) | 1970-01-15 |
Family
ID=24992644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691933526 Pending DE1933526A1 (de) | 1968-07-12 | 1969-07-02 | Feldeffekt-Transistor |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE732676A (enrdf_load_stackoverflow) |
| DE (1) | DE1933526A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2012807B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1277967A (enrdf_load_stackoverflow) |
| NL (1) | NL6906840A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2128536A1 (de) * | 1970-06-10 | 1971-12-16 | Hitachi Ltd | Halbleiterbauelement mit zwei MOS-Transistoren vom nicht-symmetrischen Typ |
-
1969
- 1969-05-05 NL NL6906840A patent/NL6906840A/xx unknown
- 1969-05-07 BE BE732676D patent/BE732676A/xx not_active IP Right Cessation
- 1969-05-22 FR FR6916715A patent/FR2012807B1/fr not_active Expired
- 1969-07-02 DE DE19691933526 patent/DE1933526A1/de active Pending
- 1969-07-11 GB GB35000/69A patent/GB1277967A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2128536A1 (de) * | 1970-06-10 | 1971-12-16 | Hitachi Ltd | Halbleiterbauelement mit zwei MOS-Transistoren vom nicht-symmetrischen Typ |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1277967A (en) | 1972-06-14 |
| BE732676A (enrdf_load_stackoverflow) | 1969-10-16 |
| NL6906840A (enrdf_load_stackoverflow) | 1970-01-14 |
| FR2012807B1 (enrdf_load_stackoverflow) | 1973-12-07 |
| FR2012807A1 (enrdf_load_stackoverflow) | 1970-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE19743342C2 (de) | Feldeffekttransistor hoher Packungsdichte und Verfahren zu seiner Herstellung | |
| DE2812740A1 (de) | Verfahren zum herstellen einer vertikalen, bipolaren integrierten schaltung | |
| DE2518010A1 (de) | Ic-halbleiterbauelement mit einer injektions-logikzelle | |
| DE1283399B (de) | Feldeffekt-Transistor mit zwei ohmschen Elektroden und mit einer isolierten Steuerelektrode | |
| DE1614373B1 (de) | Monolithische integrierte Halbleiterschaltung | |
| DE69330298T2 (de) | Multifunktionale elektronische Vorrichtung, insbesondere Element mit dynamischem, negativem Widerstandsverhalten und Zugehöriges Herstellungsverfahren | |
| DE1948921A1 (de) | Halbleiterbauelement,insbesondere monolithischer integrierter Schaltkreis und Verfahren zu seiner Herstellung | |
| DE202015105413U1 (de) | Integrierte, floatende Diodenstruktur | |
| DE1811492A1 (de) | Feldeffekttransistor | |
| DE1282796B (de) | Integrierte Halbleiteranordnungen und Verfahren zum Herstellen derselben | |
| DE1614300B2 (de) | Feldeffekttransistor mit isolierter Steuerelektrode | |
| DE2515577A1 (de) | Schaltungsanordnung mit einem transistor hoher eingangsimpedanz | |
| DE2833068A1 (de) | Integrierte halbleitervorrichtung | |
| DE3022122C2 (enrdf_load_stackoverflow) | ||
| DE1816436A1 (de) | Halbleiterbauelement | |
| DE2657293C3 (de) | Elektrische Schaltungsanordnung in Transistor-Transistor-Logikschaltung (TTL) | |
| DE2048737A1 (de) | Verfahren zur Herstellung integrierter Transistoren | |
| DE3230510A1 (de) | Variabler mis-widerstand | |
| DE1764578B2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung mit einem Feldeffekttransistor | |
| DE2953394T1 (de) | Dielectrically-isolated integrated circuit complementary transistors for high voltage use | |
| DE2418560A1 (de) | Halbleitervorrichtung | |
| DE2507038C3 (de) | Inverser Planartransistor und Verfahren zu seiner Herstellung | |
| DE10044838A1 (de) | Halbleiterbauelement | |
| EP0008043B1 (de) | Integrierter bipolarer Halbleiterschaltkreis | |
| DE2364753A1 (de) | Halbleitervorrichtung |