DE1930016C3 - Avalanchediode und Verfahren zu ihrer Herstellung - Google Patents
Avalanchediode und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE1930016C3 DE1930016C3 DE1930016A DE1930016A DE1930016C3 DE 1930016 C3 DE1930016 C3 DE 1930016C3 DE 1930016 A DE1930016 A DE 1930016A DE 1930016 A DE1930016 A DE 1930016A DE 1930016 C3 DE1930016 C3 DE 1930016C3
- Authority
- DE
- Germany
- Prior art keywords
- zone
- zones
- heavily doped
- avalanche diode
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 25
- 230000007704 transition Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000002800 charge carrier Substances 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 2
- 238000005275 alloying Methods 0.000 claims 2
- 238000003486 chemical etching Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 241001494503 Darnis Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73779068A | 1968-06-17 | 1968-06-17 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1930016A1 DE1930016A1 (de) | 1969-12-18 |
| DE1930016B2 DE1930016B2 (de) | 1973-10-04 |
| DE1930016C3 true DE1930016C3 (de) | 1974-05-09 |
Family
ID=24965343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1930016A Expired DE1930016C3 (de) | 1968-06-17 | 1969-06-13 | Avalanchediode und Verfahren zu ihrer Herstellung |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1930016C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2019285B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1263626A (enrdf_load_stackoverflow) |
| NL (1) | NL6909204A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8450835B2 (en) * | 2008-04-29 | 2013-05-28 | Sandisk 3D Llc | Reverse leakage reduction and vertical height shrinking of diode with halo doping |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL122283C (enrdf_load_stackoverflow) * | 1958-07-25 | |||
| FR1519634A (fr) * | 1965-12-30 | 1968-04-05 | Siemens Ag | Diode à avalanche pour la production d'oscillations |
-
1969
- 1969-05-15 GB GB24782/69A patent/GB1263626A/en not_active Expired
- 1969-06-13 DE DE1930016A patent/DE1930016C3/de not_active Expired
- 1969-06-17 NL NL6909204A patent/NL6909204A/xx unknown
- 1969-06-17 FR FR696920070A patent/FR2019285B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2019285B1 (enrdf_load_stackoverflow) | 1974-02-22 |
| DE1930016B2 (de) | 1973-10-04 |
| FR2019285A1 (enrdf_load_stackoverflow) | 1970-07-03 |
| GB1263626A (en) | 1972-02-16 |
| NL6909204A (enrdf_load_stackoverflow) | 1969-12-19 |
| DE1930016A1 (de) | 1969-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |