GB1263626A - Epitaxial method for fabricating an avalanche diode and product - Google Patents

Epitaxial method for fabricating an avalanche diode and product

Info

Publication number
GB1263626A
GB1263626A GB24782/69A GB2478269A GB1263626A GB 1263626 A GB1263626 A GB 1263626A GB 24782/69 A GB24782/69 A GB 24782/69A GB 2478269 A GB2478269 A GB 2478269A GB 1263626 A GB1263626 A GB 1263626A
Authority
GB
United Kingdom
Prior art keywords
substrate
regions
doped
epitaxially deposited
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24782/69A
Other languages
English (en)
Inventor
Hayden Martin Leedy Jr
Harry Leroy Stover
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1263626A publication Critical patent/GB1263626A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
GB24782/69A 1968-06-17 1969-05-15 Epitaxial method for fabricating an avalanche diode and product Expired GB1263626A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73779068A 1968-06-17 1968-06-17

Publications (1)

Publication Number Publication Date
GB1263626A true GB1263626A (en) 1972-02-16

Family

ID=24965343

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24782/69A Expired GB1263626A (en) 1968-06-17 1969-05-15 Epitaxial method for fabricating an avalanche diode and product

Country Status (4)

Country Link
DE (1) DE1930016C3 (enrdf_load_stackoverflow)
FR (1) FR2019285B1 (enrdf_load_stackoverflow)
GB (1) GB1263626A (enrdf_load_stackoverflow)
NL (1) NL6909204A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009134324A1 (en) * 2008-04-29 2009-11-05 Sandisk 3D Llc Reduction of leakage current in a vertical diode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL122283C (enrdf_load_stackoverflow) * 1958-07-25
FR1519634A (fr) * 1965-12-30 1968-04-05 Siemens Ag Diode à avalanche pour la production d'oscillations

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009134324A1 (en) * 2008-04-29 2009-11-05 Sandisk 3D Llc Reduction of leakage current in a vertical diode
US8450835B2 (en) 2008-04-29 2013-05-28 Sandisk 3D Llc Reverse leakage reduction and vertical height shrinking of diode with halo doping

Also Published As

Publication number Publication date
NL6909204A (enrdf_load_stackoverflow) 1969-12-19
DE1930016A1 (de) 1969-12-18
FR2019285A1 (enrdf_load_stackoverflow) 1970-07-03
DE1930016B2 (de) 1973-10-04
FR2019285B1 (enrdf_load_stackoverflow) 1974-02-22
DE1930016C3 (de) 1974-05-09

Similar Documents

Publication Publication Date Title
ES351652A1 (es) Un dispositivo semiconductor integrado.
GB1301345A (enrdf_load_stackoverflow)
GB954478A (en) Semiconductor capacitor devices
JPH01205564A (ja) 光半導体装置およびその製造方法
GB1003131A (en) Semiconductor devices and their fabrication
US3395320A (en) Isolation technique for integrated circuit structure
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1312510A (en) Method of manufacturing a multi-layer semiconductor device
GB1263626A (en) Epitaxial method for fabricating an avalanche diode and product
GB992963A (en) Semiconductor devices
ES351788A1 (es) Un dispositivo semiconductor.
FR2363889A1 (fr) Procede de fabrication de regions enterrees conductrices dans des circuits integres et structures resultantes
US3711940A (en) Method for making mos structure with precisely controlled channel length
GB1262787A (en) Improvements in or relating to semiconductor arrangements
GB1071294A (en) Improvements in and relating to the manufacture of transistors
GB1268406A (en) Improvements in and relating to pressure sensitive semiconductor devices and method of manufacturing the same
GB1340350A (en) Surface controlled avalanche semiconductor device
JPS61182242A (ja) 半導体装置の製造方法
GB1260026A (en) A method of manufacturing a semiconductor photo-sensitive device
JPS59103380A (ja) 積層形ｍｏｓトランジスタおよびその製造方法
GB1074287A (en) Improvements in and relating to semiconductor devices
JP2501556B2 (ja) 光センサおよびその製造方法
GB863119A (en) Semi-conductor translating devices and method of making the same
US3327525A (en) Scribed and notched pn-junction transducers
FR2321771A1 (fr) Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede