DE1914157A1 - Feldeffektbauelement - Google Patents

Feldeffektbauelement

Info

Publication number
DE1914157A1
DE1914157A1 DE19691914157 DE1914157A DE1914157A1 DE 1914157 A1 DE1914157 A1 DE 1914157A1 DE 19691914157 DE19691914157 DE 19691914157 DE 1914157 A DE1914157 A DE 1914157A DE 1914157 A1 DE1914157 A1 DE 1914157A1
Authority
DE
Germany
Prior art keywords
gate electrode
substrate
channel
source
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691914157
Other languages
German (de)
English (en)
Inventor
Christian Jund
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE1914157A1 publication Critical patent/DE1914157A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19691914157 1968-03-20 1969-03-20 Feldeffektbauelement Pending DE1914157A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR144510 1968-03-20

Publications (1)

Publication Number Publication Date
DE1914157A1 true DE1914157A1 (de) 1970-08-27

Family

ID=8647730

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691914157 Pending DE1914157A1 (de) 1968-03-20 1969-03-20 Feldeffektbauelement

Country Status (3)

Country Link
DE (1) DE1914157A1 (enrdf_load_stackoverflow)
FR (1) FR1566559A (enrdf_load_stackoverflow)
GB (1) GB1239348A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3694673A (en) * 1971-03-15 1972-09-26 Microsystems Int Ltd Field effect device and circuit having high current driving capabilities utilizing such device
FR2430092A1 (fr) 1978-06-29 1980-01-25 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, diffusees ou implantees et resistances ainsi obtenues

Also Published As

Publication number Publication date
FR1566559A (enrdf_load_stackoverflow) 1969-05-09
GB1239348A (enrdf_load_stackoverflow) 1971-07-14

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