GB1239348A - - Google Patents

Info

Publication number
GB1239348A
GB1239348A GB1239348DA GB1239348A GB 1239348 A GB1239348 A GB 1239348A GB 1239348D A GB1239348D A GB 1239348DA GB 1239348 A GB1239348 A GB 1239348A
Authority
GB
United Kingdom
Prior art keywords
igfet
march
serpentine
type
heavily doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1239348A publication Critical patent/GB1239348A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

1,239,348. IGFET. THOMSON-C.S.F. 19 March, 1969 [20 March, 1968], No. 14494/69. Heading H1K. An IGFET (Fig. 5) formed on a lightly doped N (or P) type substrate comprises source and drain regions 4, 5 of the opposite type joined by a serpentine track 8 of lightly doped N(P) type material laterally bounded by heavily doped N(P) material 7. The gate electrode is disposed over the entire gap between the source and drain on a layer of oxide. The heavily doped material prevents short circuiting between different parts of the inversion layer formed in operation over the closely spaced limbs of the serpentine.
GB1239348D 1968-03-20 1969-03-19 Expired GB1239348A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR144510 1968-03-20

Publications (1)

Publication Number Publication Date
GB1239348A true GB1239348A (en) 1971-07-14

Family

ID=8647730

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1239348D Expired GB1239348A (en) 1968-03-20 1969-03-19

Country Status (3)

Country Link
DE (1) DE1914157A1 (en)
FR (1) FR1566559A (en)
GB (1) GB1239348A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3694673A (en) * 1971-03-15 1972-09-26 Microsystems Int Ltd Field effect device and circuit having high current driving capabilities utilizing such device

Also Published As

Publication number Publication date
DE1914157A1 (en) 1970-08-27
FR1566559A (en) 1969-05-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee