DE1794113C3 - Verfahren zum Eindiffundieren von Fremdalomen in Siliciumcarbid - Google Patents

Verfahren zum Eindiffundieren von Fremdalomen in Siliciumcarbid

Info

Publication number
DE1794113C3
DE1794113C3 DE1794113A DE1794113A DE1794113C3 DE 1794113 C3 DE1794113 C3 DE 1794113C3 DE 1794113 A DE1794113 A DE 1794113A DE 1794113 A DE1794113 A DE 1794113A DE 1794113 C3 DE1794113 C3 DE 1794113C3
Authority
DE
Germany
Prior art keywords
silicon carbide
foreign
alomas
diffusion
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1794113A
Other languages
German (de)
English (en)
Other versions
DE1794113A1 (de
DE1794113B2 (de
Inventor
Masakazu Osaka Fukai
Kunio Kadoma Sakai
Atsutomo Hirakata Tohi
Yoshinobu Kashiwara Tsujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE1794113A1 publication Critical patent/DE1794113A1/de
Publication of DE1794113B2 publication Critical patent/DE1794113B2/de
Application granted granted Critical
Publication of DE1794113C3 publication Critical patent/DE1794113C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
DE1794113A 1967-09-11 1968-09-10 Verfahren zum Eindiffundieren von Fremdalomen in Siliciumcarbid Expired DE1794113C3 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP5887767 1967-09-11
JP5890567 1967-09-11
US75805868A 1968-09-06 1968-09-06
US00164128A US3829333A (en) 1967-09-11 1971-07-19 Method for diffusing an impurity substance into silicon carbide

Publications (3)

Publication Number Publication Date
DE1794113A1 DE1794113A1 (de) 1972-03-16
DE1794113B2 DE1794113B2 (de) 1973-09-27
DE1794113C3 true DE1794113C3 (de) 1975-08-21

Family

ID=27463699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1794113A Expired DE1794113C3 (de) 1967-09-11 1968-09-10 Verfahren zum Eindiffundieren von Fremdalomen in Siliciumcarbid

Country Status (5)

Country Link
US (2) US3629011A (https=)
DE (1) DE1794113C3 (https=)
FR (1) FR1584423A (https=)
GB (1) GB1238729A (https=)
NL (1) NL151568B (https=)

Families Citing this family (49)

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US3715636A (en) * 1972-01-03 1973-02-06 Gen Electric Silicon carbide lamp mounted on a ceramic of poor thermal conductivity
US3986193A (en) * 1973-02-08 1976-10-12 Jury Alexandrovich Vodakov Semiconductor SiCl light source and a method of manufacturing same
US3982262A (en) * 1974-04-17 1976-09-21 Karatsjuba Anatoly Prokofievic Semiconductor indicating instrument
US3999206A (en) * 1974-11-04 1976-12-21 Vladimir Alexandrovich Babenko Semiconductor indicating device and method for production of same
JPH01220822A (ja) * 1988-02-29 1989-09-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
DE4009837A1 (de) * 1989-03-27 1990-10-11 Sharp Kk Verfahren zur herstellung einer halbleitereinrichtung
US5406237A (en) * 1994-01-24 1995-04-11 Westinghouse Electric Corporation Wideband frequency multiplier having a silicon carbide varactor for use in high power microwave applications
SE9500013D0 (sv) * 1995-01-03 1995-01-03 Abb Research Ltd Semiconductor device having a passivation layer
SE9501310D0 (sv) * 1995-04-10 1995-04-10 Abb Research Ltd A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC
SE9503631D0 (sv) * 1995-10-18 1995-10-18 Abb Research Ltd A method for producing a semiconductor device comprising an implantation step
US5849620A (en) * 1995-10-18 1998-12-15 Abb Research Ltd. Method for producing a semiconductor device comprising an implantation step
WO1999017345A1 (de) * 1997-09-30 1999-04-08 Infineon Technologies Ag Verfahren zum thermischen ausheilen von durch implantation dotierten siliziumcarbid-halbleitern
US6107142A (en) * 1998-06-08 2000-08-22 Cree Research, Inc. Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion
US6100169A (en) 1998-06-08 2000-08-08 Cree, Inc. Methods of fabricating silicon carbide power devices by controlled annealing
US6429041B1 (en) 2000-07-13 2002-08-06 Cree, Inc. Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation
US6956238B2 (en) * 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US7138291B2 (en) 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
TW589669B (en) * 2002-09-25 2004-06-01 Nanya Technology Corp Gate with dual gate dielectric layer and method thereof
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US6979863B2 (en) * 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7118970B2 (en) * 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8710510B2 (en) 2006-08-17 2014-04-29 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8288220B2 (en) * 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US9199389B2 (en) 2011-04-11 2015-12-01 Milwaukee Electric Tool Corporation Hydraulic hand-held knockout punch driver
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2842466A (en) * 1954-06-15 1958-07-08 Gen Electric Method of making p-nu junction semiconductor unit
US3341754A (en) * 1966-01-20 1967-09-12 Ion Physics Corp Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions

Also Published As

Publication number Publication date
US3829333A (en) 1974-08-13
US3629011A (en) 1971-12-21
NL151568B (nl) 1976-11-15
NL6812865A (https=) 1969-03-13
DE1794113A1 (de) 1972-03-16
DE1794113B2 (de) 1973-09-27
GB1238729A (https=) 1971-07-07
FR1584423A (https=) 1969-12-19

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EF Willingness to grant licences
8339 Ceased/non-payment of the annual fee