DE1769935C3 - Verfahren zum Ziehen eines Einkristalls aus einer Schmelze - Google Patents
Verfahren zum Ziehen eines Einkristalls aus einer SchmelzeInfo
- Publication number
- DE1769935C3 DE1769935C3 DE19681769935 DE1769935A DE1769935C3 DE 1769935 C3 DE1769935 C3 DE 1769935C3 DE 19681769935 DE19681769935 DE 19681769935 DE 1769935 A DE1769935 A DE 1769935A DE 1769935 C3 DE1769935 C3 DE 1769935C3
- Authority
- DE
- Germany
- Prior art keywords
- melt
- crystal
- single crystal
- area
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 83
- 239000000155 melt Substances 0.000 title claims description 65
- 238000000034 method Methods 0.000 title claims description 30
- 238000010894 electron beam technology Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 2
- 230000033001 locomotion Effects 0.000 claims 2
- 108050001286 Somatostatin Receptor Proteins 0.000 claims 1
- 102000011096 Somatostatin receptor Human genes 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000035784 germination Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000010970 precious metal Substances 0.000 claims 1
- 210000003371 toe Anatomy 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000009826 distribution Methods 0.000 description 6
- 230000005499 meniscus Effects 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000012768 molten material Substances 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65917567A | 1967-08-08 | 1967-08-08 | |
| US74487468A | 1968-07-15 | 1968-07-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1769935A1 DE1769935A1 (de) | 1971-01-14 |
| DE1769935B2 DE1769935B2 (de) | 1973-02-08 |
| DE1769935C3 true DE1769935C3 (de) | 1973-09-20 |
Family
ID=27097768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681769935 Expired DE1769935C3 (de) | 1967-08-08 | 1968-08-08 | Verfahren zum Ziehen eines Einkristalls aus einer Schmelze |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS4832913B1 (en:Method) |
| BE (1) | BE719229A (en:Method) |
| DE (1) | DE1769935C3 (en:Method) |
| FR (1) | FR1583109A (en:Method) |
| GB (1) | GB1225405A (en:Method) |
| SE (1) | SE352249B (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6908620B2 (ja) * | 2016-03-29 | 2021-07-28 | コーナー・スター・リミテッドＣｏｒｎｅｒ Ｓｔａｒ Ｌｉｍｉｔｅｄ | 結晶成長装置および関連する方法 |
-
1968
- 1968-07-31 GB GB1225405D patent/GB1225405A/en not_active Expired
- 1968-08-07 SE SE1062368A patent/SE352249B/xx unknown
- 1968-08-08 BE BE719229D patent/BE719229A/xx unknown
- 1968-08-08 DE DE19681769935 patent/DE1769935C3/de not_active Expired
- 1968-08-08 JP JP5584468A patent/JPS4832913B1/ja active Pending
- 1968-08-08 FR FR1583109D patent/FR1583109A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1225405A (en:Method) | 1971-03-17 |
| BE719229A (en:Method) | 1969-01-16 |
| FR1583109A (en:Method) | 1969-10-17 |
| DE1769935A1 (de) | 1971-01-14 |
| SE352249B (en:Method) | 1972-12-27 |
| JPS4832913B1 (en:Method) | 1973-10-09 |
| DE1769935B2 (de) | 1973-02-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) |