DE1764579A1 - Verfahren zur Herstellung einer Halbleitervorrichtung und durch dieses Verfahren hergestellte Halbleitervorrichtung - Google Patents
Verfahren zur Herstellung einer Halbleitervorrichtung und durch dieses Verfahren hergestellte HalbleitervorrichtungInfo
- Publication number
- DE1764579A1 DE1764579A1 DE19681764579 DE1764579A DE1764579A1 DE 1764579 A1 DE1764579 A1 DE 1764579A1 DE 19681764579 DE19681764579 DE 19681764579 DE 1764579 A DE1764579 A DE 1764579A DE 1764579 A1 DE1764579 A1 DE 1764579A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- transistor
- epitaxial
- substrate
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010410 layer Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 20
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 description 20
- 238000011282 treatment Methods 0.000 description 7
- 230000005669 field effect Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 241001155433 Centrarchus macropterus Species 0.000 description 1
- 101150064205 ESR1 gene Proteins 0.000 description 1
- 240000002114 Satureja hortensis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR112636 | 1967-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1764579A1 true DE1764579A1 (de) | 1971-08-19 |
Family
ID=8634223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681764579 Pending DE1764579A1 (de) | 1967-06-30 | 1968-06-28 | Verfahren zur Herstellung einer Halbleitervorrichtung und durch dieses Verfahren hergestellte Halbleitervorrichtung |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE1764579A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1559610A (enrdf_load_stackoverflow) |
| GB (1) | GB1229295A (enrdf_load_stackoverflow) |
| NL (1) | NL6808966A (enrdf_load_stackoverflow) |
| SE (1) | SE331859B (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2505102B1 (fr) * | 1981-04-29 | 1986-01-24 | Radiotechnique Compelec | Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree |
| WO1984001053A1 (fr) * | 1982-08-26 | 1984-03-15 | Mitsubishi Electric Corp | Dispositif a semiconducteurs |
| GB9609276D0 (en) * | 1996-05-07 | 1996-07-10 | Plessey Semiconductors Ltd | Integrated bipolar PNP transistors |
-
1967
- 1967-06-30 FR FR112636A patent/FR1559610A/fr not_active Expired
-
1968
- 1968-06-26 NL NL6808966A patent/NL6808966A/xx unknown
- 1968-06-27 GB GB1229295D patent/GB1229295A/en not_active Expired
- 1968-06-27 SE SE08758/68A patent/SE331859B/xx unknown
- 1968-06-28 DE DE19681764579 patent/DE1764579A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR1559610A (enrdf_load_stackoverflow) | 1969-03-14 |
| NL6808966A (enrdf_load_stackoverflow) | 1968-12-31 |
| GB1229295A (enrdf_load_stackoverflow) | 1971-04-21 |
| SE331859B (enrdf_load_stackoverflow) | 1971-01-18 |
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