DE1644017C3 - - Google Patents
Info
- Publication number
- DE1644017C3 DE1644017C3 DE19641644017 DE1644017A DE1644017C3 DE 1644017 C3 DE1644017 C3 DE 1644017C3 DE 19641644017 DE19641644017 DE 19641644017 DE 1644017 A DE1644017 A DE 1644017A DE 1644017 C3 DE1644017 C3 DE 1644017C3
- Authority
- DE
- Germany
- Prior art keywords
- heater
- reaction vessel
- heat
- semiconductor wafers
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 19
- 235000012431 wafers Nutrition 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- 239000011358 absorbing material Substances 0.000 claims description 4
- 230000000284 resting effect Effects 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0111500 | 1964-12-23 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1644017A1 DE1644017A1 (de) | 1970-04-16 |
| DE1644017B2 DE1644017B2 (de) | 1974-11-14 |
| DE1644017C3 true DE1644017C3 (Direct) | 1975-07-03 |
Family
ID=7530976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19641644017 Granted DE1644017B2 (de) | 1964-12-23 | 1964-12-23 | Verfahren zum epitaktischen Abscheiden einer Halbleiterschicht Ausscheidung aus: 1262244 |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1644017B2 (Direct) |
-
1964
- 1964-12-23 DE DE19641644017 patent/DE1644017B2/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE1644017A1 (de) | 1970-04-16 |
| DE1644017B2 (de) | 1974-11-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E771 | Valid patent as to the heymanns-index 1977, willingness to grant licences |