DE1614635A1 - Verfahren zum Herstellen von Fotolackmasken fuer Halbleiterzwecke - Google Patents
Verfahren zum Herstellen von Fotolackmasken fuer HalbleiterzweckeInfo
- Publication number
- DE1614635A1 DE1614635A1 DE19671614635 DE1614635A DE1614635A1 DE 1614635 A1 DE1614635 A1 DE 1614635A1 DE 19671614635 DE19671614635 DE 19671614635 DE 1614635 A DE1614635 A DE 1614635A DE 1614635 A1 DE1614635 A1 DE 1614635A1
- Authority
- DE
- Germany
- Prior art keywords
- electron beam
- writing
- photoresist layer
- movement
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 44
- 238000000034 method Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 63
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims 1
- 238000005452 bending Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 206010044565 Tremor Diseases 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XBYNNYGGLWJASC-UHFFFAOYSA-N barium titanium Chemical compound [Ti].[Ba] XBYNNYGGLWJASC-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000020004 porter Nutrition 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0112516 | 1967-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1614635A1 true DE1614635A1 (de) | 1970-03-26 |
Family
ID=7531832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19671614635 Pending DE1614635A1 (de) | 1967-10-23 | 1967-10-23 | Verfahren zum Herstellen von Fotolackmasken fuer Halbleiterzwecke |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3607382A (enrdf_load_stackoverflow) |
| AT (1) | AT301620B (enrdf_load_stackoverflow) |
| CH (1) | CH485327A (enrdf_load_stackoverflow) |
| DE (1) | DE1614635A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1589571A (enrdf_load_stackoverflow) |
| GB (1) | GB1230469A (enrdf_load_stackoverflow) |
| NL (1) | NL6813891A (enrdf_load_stackoverflow) |
| SE (1) | SE331315B (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1328803A (en) * | 1969-12-17 | 1973-09-05 | Mullard Ltd | Methods of manufacturing semiconductor devices |
| US3779806A (en) * | 1972-03-24 | 1973-12-18 | Ibm | Electron beam sensitive polymer t-butyl methacrylate resist |
| US3840749A (en) * | 1973-06-19 | 1974-10-08 | Westinghouse Electric Corp | Method and apparatus for electron beam alignment with a semiconductor member |
| US3900737A (en) * | 1974-04-18 | 1975-08-19 | Bell Telephone Labor Inc | Electron beam exposure system |
| US4035522A (en) * | 1974-07-19 | 1977-07-12 | International Business Machines Corporation | X-ray lithography mask |
| FR2294489A1 (fr) * | 1974-12-13 | 1976-07-09 | Thomson Csf | Dispositif pour le trace programme de dessins par bombardement de particules |
| GB2066487B (en) * | 1979-12-18 | 1983-11-23 | Philips Electronic Associated | Alignment of exposure masks |
| US4576884A (en) * | 1984-06-14 | 1986-03-18 | Microelectronics Center Of North Carolina | Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge |
| AT391224B (de) * | 1988-01-26 | 1990-09-10 | Thallner Erich | Belichtungseinrichtung fuer lichtempfindlich gemachte substrate |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3330696A (en) * | 1967-07-11 | Method of fabricating thin film capacitors | ||
| US2705764A (en) * | 1950-02-25 | 1955-04-05 | Rca Corp | Dual-area target electrodes and methods of making the same |
| US2968723A (en) * | 1957-04-11 | 1961-01-17 | Zeiss Carl | Means for controlling crystal structure of materials |
| US3113896A (en) * | 1961-01-31 | 1963-12-10 | Space Technology Lab Inc | Electron beam masking for etching electrical circuits |
| NL297262A (enrdf_load_stackoverflow) * | 1962-09-04 | |||
| NL294370A (enrdf_load_stackoverflow) * | 1963-06-20 | |||
| US3364087A (en) * | 1964-04-27 | 1968-01-16 | Varian Associates | Method of using laser to coat or etch substrate |
| US3388000A (en) * | 1964-09-18 | 1968-06-11 | Texas Instruments Inc | Method of forming a metal contact on a semiconductor device |
| US3326176A (en) * | 1964-10-27 | 1967-06-20 | Nat Res Corp | Work-registration device including ionic beam probe |
-
1967
- 1967-10-23 DE DE19671614635 patent/DE1614635A1/de active Pending
- 1967-10-23 AT AT10251/68A patent/AT301620B/de not_active IP Right Cessation
-
1968
- 1968-09-27 NL NL6813891A patent/NL6813891A/xx unknown
- 1968-10-18 FR FR1589571D patent/FR1589571A/fr not_active Expired
- 1968-10-18 US US768797A patent/US3607382A/en not_active Expired - Lifetime
- 1968-10-22 GB GB1230469D patent/GB1230469A/en not_active Expired
- 1968-10-23 CH CH1581068A patent/CH485327A/de not_active IP Right Cessation
- 1968-10-23 SE SE14341/68A patent/SE331315B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR1589571A (enrdf_load_stackoverflow) | 1970-03-31 |
| US3607382A (en) | 1971-09-21 |
| AT301620B (de) | 1972-08-15 |
| GB1230469A (enrdf_load_stackoverflow) | 1971-05-05 |
| SE331315B (enrdf_load_stackoverflow) | 1970-12-21 |
| CH485327A (de) | 1970-01-31 |
| NL6813891A (enrdf_load_stackoverflow) | 1969-04-25 |
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