US3607382A - Method of producing photovarnish masks for semiconductors - Google Patents

Method of producing photovarnish masks for semiconductors Download PDF

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Publication number
US3607382A
US3607382A US768797A US3607382DA US3607382A US 3607382 A US3607382 A US 3607382A US 768797 A US768797 A US 768797A US 3607382D A US3607382D A US 3607382DA US 3607382 A US3607382 A US 3607382A
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electron beam
photovarnish
writing
layer
movement
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US768797A
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Heinz Henker
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Definitions

  • a photovarnish layer positioned on a workpiece, is selectively illuminated, whereupon portions of the photovarnish layer are removed through developing.
  • the illumination is effected by means ofa thin electron beam, moved essentially along a single coordinate direction.
  • the photovarnish layer to be illuminated is moved perpendicularly to the movement direction of the electron beam.
  • the respective movement length of the electron beam is limited according to the pattern of the photovarnish mask to be produced.
  • photovarnish masks for semiconductors entails the placing of thin layers of photovarnish upon the surface of a carrier body, more particularly a semiconductor wafer.
  • the photovarnish layer is then locally illuminated and developed in a desired manner. Developing of the photovarnish layer results in windings therein which extend locally to the semiconductor surface.
  • the remaining portions of the photovarnish layer continue to cover the semiconductor surface and offer protection for the subsequent treatment, especially against etching or vaporization processes.
  • the photovarnish layer is loosened or dissolved off, for example by means of acetone.
  • the defining or limited illumination of the photovarnish mask poses an optical problem because of the small size of the structure to be produced.
  • the solution of this problem entails considerable technical expenditures, particularly since the minute size of the structures being produced often fall within the range wherein bending problems and similar optical manifestations are of great consequence.
  • the boundary of optical dissolution is almost reached because structures must be reproduced which are in the order of magnitude of the light sources being used.
  • one is also bound to the sensitivity range of the photosensitive photovarnish layers. When the apparatus for the illuminating optics is enlarged, the depth sharpness is reduced so that the requirement of fine adjustment and the planeness of the carrier body would have to be increased almost to intolerable limits.
  • Electron beams whose wavelength, e.g. at 100 kv. accelerating voltage is approximately smaller by the factor 10 than visible light, are known to lend themselves to very fine bunching. This affords the opportunity to work with an aperture of about l"so that a depth of field is obtained, which is greater by some orders of magnitude than that of a reproduction with light, despite the fact that the image spots are smaller by the factor to 100.
  • the present invention aims to circumvent all these difficulties and to obtain the required accuracy during the production of photovarnish masks in a relatively simple manner.
  • the present invention relates to a method of of producing photovarnish masks for semiconductors whereby a photovarnish layer which is placed upon a workpiece, for example a semiconductor is selectively irradiated and subsequently portions of the photovarnish layer are removed by means of developing.
  • the method is characterized by the fact that irradiation is effected by means of a thin electron beam which is moved essentially along a single coordinate direction, whereby the photovarnish layer which is to be irradiated is moved perpendicular to the movement direction of the electron beam and the respective length of motion of the electron beam is limited in accordance with the pattern of the photovarnish layer which must be produced.
  • an electron beam may be used, e.g. focused to a diameter of less than 0.2 p.., and moved only in one coordinate direction, e.g. a stretch of l to 2 mm.
  • An electron beam which is moved only in one coordinate direction can be controlled much simpler and more accurately than if the control is required along two coordinate directions.
  • FIG. I shows apparatus for carrying out the invention
  • FIG. 2 shows an auxiliary device
  • FIG. 3 is a enlarged detail of FIG. 2.
  • an evacuated cylinder 1 is provided with an outlet 2 for the electrons (if necessary sealed by a Lenard window), a known source for electron beams 3, e.g. a glowing cathode, a Wehnelt cylinder 4, various diaphragms 5, a deflection device 6, e.g. an electrostatic deflector, and various bunching devices.
  • An electron beam 7 is moved back and forth in one coordinate direction when an alternating voltage is applied to said deflection device.
  • the beam 7 impinges upon a photovarnish layer 9, which is placed, for example, upon a semiconductor disc
  • I may use a slot 11 which is produced in a thin sheet 10, comprised of resistant metal such as tungsten or tantalum.
  • this slot is arranged directly ahead of the photovarnish layer 9 as seen from the source of the electron beam 3. Furthermore, in the example, the photovarnish layer 9 with its carrier 8 is located outside the device which produces the electron beam 7.
  • the slot 11 may also be coated at the issue point 2 of the electron beam or be identical therewith. As a last possibility, the photovarnish layer 9 and the slot 11 may also be placed within the device which generates the electron beam 7.
  • the *writing" length of the electron beam 7, determined by slot lll, is indicated as 7a and 7c with the middle position 7b. Compared with the corresponding dimension of the geometry to be illuminated, the width of slot 11 is very slight.
  • the slot 11 (see FIG.
  • the writing width of the electron beam 7 on the photovarnish layer 9 is determined and limited by the width of the slot 11. It is therefore frequently preferred to operate with extremely narrow slots with exactly parallel boundaries.
  • the carrier 8 with the photovarnish layer 9 may be arranged in the same vacuum (high vacuum) as the electron beam device, as well as in a poorer vacuum (fine vacuum) and even outside the vacuum chamber. One must make sure, however, that in each case enough electrons impinge with adequate bunching upon the photovarnish layer.
  • the shifting of the photovarnish layer 9 is preferably controlled by laser beam interferences. This affords an adjustment accuracy of two adjacent writing positions, corresponding to the periodicity of the interference stages of less than one quarter of the employed wavelength. When a helium/neon laser is used, this amounts to less than 0.16 t.
  • the writing motion of the electron beam may be released through each interference passage. Even though it is possible to let the electron beam run back and forth during the wiring process, in the main wiring direction, very often only one writing direction is preferred, for example from left to right. This also applies particularly when the control is effected through interference passages. During the return run, which should be very rapid, the electron beam becomes dim. For interference control during writing, the varnish layer should remain stationary.
  • the next writing position of the photovarnish layer should be adjusted only during the return run, for example at a distance of 5 Since in this case an one"-off control is enough for the electron beam intensity, the electrical stimulations may be stored in a digital data memory. If the deflection in writing direction and the motion of the photovarnish layer are also effected digitally, i.e., in many defined steps, the entire program for writing a mask image can be consolidated in a small data memory. This eliminates the necessity for providing an original image of the mask since only the data memory with the respective coordinator magnitudes needs to be programmed. The feeding is possible, e.g. with perforated tapes, magnetic bands, etc.
  • the problem of adjusting various structures, stacked upon each other, may be solved as follows: At specific places of i the semiconductor wafer, nondisturbing, small defined spots of material are vapor deposited or indiffused into specific places of the semiconductor wafer at which X-ray fluorescence occurs, due to the effect of the electron beams (such as spots of tungsten, molybdenum, osmium, platinum/iridium, titanium/barium or spots of doping material). When the electron beam impinges upon such spots, X-ray beams of a specific wavelength occur.
  • an X-ray receiver adjusted to this wavelength, one can determine when such an indicator spot enters the range of the writing electron beam or when it leaves the same and, thereby, one can establish also the position of the disc or another workpiece having a photovarnish layer, with respect to the wiring" electron beam 7.
  • secondary electrons or reflecting electrons may be used in place of the X-ray beams.
  • the movement of the photovarnish layer may be effected continually, but may also be switched on in stages, in such a way, for instance, that following each to and for passage of the electron beam between the extreme positions 7a and7c, the photovarnish layer advances, perpendicular to the connecting direction between positions 7a and 7c, by a distance which approximately corresponds to the width of the electron beam.
  • the rows are determined with respect to one or several marks or fixings (buffers, jigs, dogs, etc. and then mutually displaced by aspecific number of interferences.
  • the covering uniformity of the various mask images in one row can also be easily achieved, since relating to one or several marks or fixings secured on the carrier itself one always starts at the appropriate number of interference passages, in the displacement direction of each mask image. Precision is required only duringthe deflection of the electron beam across the region of 75 a mask image, in a coordinate. Especially suitable for this purpose are not so much the conventional round semiconductor discs, used as substrates, but rather, drawn out, long, narrow tapes of silicon or germanium.
  • the method also makes it very easy to install at specific places, other circuits in order to carry out large-scale integration. To this end, the recording image must only be recalled for the specific places, from another memory.
  • the limitation of the movement of the electron beam is determined in the just described embodiment by the respective magnitude of the deflecting voltage at the deflection plates,
  • the electron beam may be completely blocked, e.g., at the boundary positions 7a or by appropriately high biasing potentials, applied at the Wehnelt cylinder.
  • Another possibility is the blocking of the intensity, for example around the middle position of the electron beam 7b, while the electron beam is not blocked in the extreme deflections 7a and 7c. This affords the writing of ring structures without the use of any masks.
  • the displacement of the electron beam or the control of its intensity and the motion of the photovarnish layer are synchronously controlled by known measures. These are not described in greater detail since they are known.
  • the desired surface of the photovarnish layer is illuminated and the desired mask geometry appears after the photovarnish layer 9 has been developed. If the aforementioned superimposition of the electron beam is used with a small movement amplitude, directed perpendicular thereto, then, in accordance with the present invention, control of said movement will be relinquished and said lateral deflection, wobbling, will be effected by means of a small auxiliary voltage applied between two auxiliary plates or through a magnet coil (not shown in the drawing).

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
US768797A 1967-10-23 1968-10-18 Method of producing photovarnish masks for semiconductors Expired - Lifetime US3607382A (en)

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Application Number Priority Date Filing Date Title
DES0112516 1967-10-23

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US (1) US3607382A (enrdf_load_stackoverflow)
AT (1) AT301620B (enrdf_load_stackoverflow)
CH (1) CH485327A (enrdf_load_stackoverflow)
DE (1) DE1614635A1 (enrdf_load_stackoverflow)
FR (1) FR1589571A (enrdf_load_stackoverflow)
GB (1) GB1230469A (enrdf_load_stackoverflow)
NL (1) NL6813891A (enrdf_load_stackoverflow)
SE (1) SE331315B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist
US4035522A (en) * 1974-07-19 1977-07-12 International Business Machines Corporation X-ray lithography mask
US4576884A (en) * 1984-06-14 1986-03-18 Microelectronics Center Of North Carolina Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1328803A (en) * 1969-12-17 1973-09-05 Mullard Ltd Methods of manufacturing semiconductor devices
US3840749A (en) * 1973-06-19 1974-10-08 Westinghouse Electric Corp Method and apparatus for electron beam alignment with a semiconductor member
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
FR2294489A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Dispositif pour le trace programme de dessins par bombardement de particules
GB2066487B (en) * 1979-12-18 1983-11-23 Philips Electronic Associated Alignment of exposure masks
AT391224B (de) * 1988-01-26 1990-09-10 Thallner Erich Belichtungseinrichtung fuer lichtempfindlich gemachte substrate

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2705764A (en) * 1950-02-25 1955-04-05 Rca Corp Dual-area target electrodes and methods of making the same
US2968723A (en) * 1957-04-11 1961-01-17 Zeiss Carl Means for controlling crystal structure of materials
US3113896A (en) * 1961-01-31 1963-12-10 Space Technology Lab Inc Electron beam masking for etching electrical circuits
US3162767A (en) * 1962-09-04 1964-12-22 United Aircraftg Corp Method for nondestructive testing by using a defocussed electron beam
US3326176A (en) * 1964-10-27 1967-06-20 Nat Res Corp Work-registration device including ionic beam probe
US3330696A (en) * 1967-07-11 Method of fabricating thin film capacitors
US3364087A (en) * 1964-04-27 1968-01-16 Varian Associates Method of using laser to coat or etch substrate
US3388000A (en) * 1964-09-18 1968-06-11 Texas Instruments Inc Method of forming a metal contact on a semiconductor device
US3442647A (en) * 1963-06-20 1969-05-06 Philips Corp Method of manufacturing semiconductor devices and semiconductor devices manufactured by such methods

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330696A (en) * 1967-07-11 Method of fabricating thin film capacitors
US2705764A (en) * 1950-02-25 1955-04-05 Rca Corp Dual-area target electrodes and methods of making the same
US2968723A (en) * 1957-04-11 1961-01-17 Zeiss Carl Means for controlling crystal structure of materials
US3113896A (en) * 1961-01-31 1963-12-10 Space Technology Lab Inc Electron beam masking for etching electrical circuits
US3162767A (en) * 1962-09-04 1964-12-22 United Aircraftg Corp Method for nondestructive testing by using a defocussed electron beam
US3442647A (en) * 1963-06-20 1969-05-06 Philips Corp Method of manufacturing semiconductor devices and semiconductor devices manufactured by such methods
US3364087A (en) * 1964-04-27 1968-01-16 Varian Associates Method of using laser to coat or etch substrate
US3388000A (en) * 1964-09-18 1968-06-11 Texas Instruments Inc Method of forming a metal contact on a semiconductor device
US3326176A (en) * 1964-10-27 1967-06-20 Nat Res Corp Work-registration device including ionic beam probe

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist
US4035522A (en) * 1974-07-19 1977-07-12 International Business Machines Corporation X-ray lithography mask
US4576884A (en) * 1984-06-14 1986-03-18 Microelectronics Center Of North Carolina Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge

Also Published As

Publication number Publication date
DE1614635A1 (de) 1970-03-26
FR1589571A (enrdf_load_stackoverflow) 1970-03-31
AT301620B (de) 1972-08-15
GB1230469A (enrdf_load_stackoverflow) 1971-05-05
SE331315B (enrdf_load_stackoverflow) 1970-12-21
CH485327A (de) 1970-01-31
NL6813891A (enrdf_load_stackoverflow) 1969-04-25

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