DE1614248C3 - Sperrschicht-Feldeffekttransistor, Verwendung desselben in einer Schaltung zur Verstärkung elektrischer Signale und Verfahren zu seiner Herstellung - Google Patents

Sperrschicht-Feldeffekttransistor, Verwendung desselben in einer Schaltung zur Verstärkung elektrischer Signale und Verfahren zu seiner Herstellung

Info

Publication number
DE1614248C3
DE1614248C3 DE1614248A DEN0030505A DE1614248C3 DE 1614248 C3 DE1614248 C3 DE 1614248C3 DE 1614248 A DE1614248 A DE 1614248A DE N0030505 A DEN0030505 A DE N0030505A DE 1614248 C3 DE1614248 C3 DE 1614248C3
Authority
DE
Germany
Prior art keywords
layer
zone
conductivity type
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1614248A
Other languages
German (de)
English (en)
Other versions
DE1614248A1 (de
DE1614248B2 (de
Inventor
Alfons Matthijs Reinier Van Nijmegen Iersel (Niederlande)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1614248A1 publication Critical patent/DE1614248A1/de
Publication of DE1614248B2 publication Critical patent/DE1614248B2/de
Application granted granted Critical
Publication of DE1614248C3 publication Critical patent/DE1614248C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
DE1614248A 1966-05-17 1967-05-13 Sperrschicht-Feldeffekttransistor, Verwendung desselben in einer Schaltung zur Verstärkung elektrischer Signale und Verfahren zu seiner Herstellung Expired DE1614248C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6606714A NL6606714A (OSRAM) 1966-05-17 1966-05-17

Publications (3)

Publication Number Publication Date
DE1614248A1 DE1614248A1 (de) 1970-05-27
DE1614248B2 DE1614248B2 (de) 1979-04-05
DE1614248C3 true DE1614248C3 (de) 1979-12-06

Family

ID=19796621

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1614248A Expired DE1614248C3 (de) 1966-05-17 1967-05-13 Sperrschicht-Feldeffekttransistor, Verwendung desselben in einer Schaltung zur Verstärkung elektrischer Signale und Verfahren zu seiner Herstellung

Country Status (8)

Country Link
US (1) US3482152A (OSRAM)
AT (1) AT277320B (OSRAM)
BE (1) BE698544A (OSRAM)
CH (1) CH478461A (OSRAM)
DE (1) DE1614248C3 (OSRAM)
ES (1) ES340523A1 (OSRAM)
GB (1) GB1189355A (OSRAM)
NL (1) NL6606714A (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063271A (en) * 1972-07-26 1977-12-13 Texas Instruments Incorporated FET and bipolar device and circuit process with maximum junction control
JPS54157092A (en) * 1978-05-31 1979-12-11 Nec Corp Semiconductor integrated circuit device
US4376983A (en) * 1980-03-21 1983-03-15 Texas Instruments Incorporated High density dynamic memory cell
US4888562A (en) * 1987-09-09 1989-12-19 National Semiconductor Corporation Low noise, high speed current or voltage amplifier
US5027082A (en) * 1990-05-01 1991-06-25 Microwave Modules & Devices, Inc. Solid state RF power amplifier having improved efficiency and reduced distortion
CN108628038B (zh) * 2018-06-28 2021-02-26 京东方科技集团股份有限公司 发光晶体管及其发光方法、阵列基板和显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL134388C (OSRAM) * 1964-05-15 1900-01-01
US3414740A (en) * 1965-09-08 1968-12-03 Ibm Integrated insulated gate field effect logic circuitry

Also Published As

Publication number Publication date
BE698544A (OSRAM) 1967-11-16
DE1614248A1 (de) 1970-05-27
NL6606714A (OSRAM) 1967-11-20
CH478461A (de) 1969-09-15
AT277320B (de) 1969-12-29
ES340523A1 (es) 1968-07-01
GB1189355A (en) 1970-04-22
US3482152A (en) 1969-12-02
DE1614248B2 (de) 1979-04-05

Similar Documents

Publication Publication Date Title
DE1614872C3 (de) Halbleiteranordnung
DE1197549B (de) Halbleiterbauelement mit mindestens einem pn-UEbergang und mindestens einer Kontakt-elektrode auf einer Isolierschicht
DE1489893B1 (de) Integrierte halbleiterschaltung
DE2542518B2 (de) Stromversorgungssystem fuer hochintegrierte halbleiterschaltungen
DE1514254B2 (de) Halbleiterbauelement
DE1539863B2 (OSRAM)
DE2310724C3 (de) Phototransistor und Verfahren zu seiner Herstellung
DE1808928A1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE2500235C2 (de) Ein-PN-Übergang-Planartransistor
DE1614248B2 (de) Sperrschicht-Feldeffekttransistor, Verwendung desselben in einer Schaltung zur Verstärkung elektrischer Signale und Verfahren zu seiner Herstellung
DE2236897B2 (OSRAM)
DE3634850C2 (OSRAM)
DE1614858C3 (de) Halbleiteranordnung
DE1639349B2 (de) Feldeffekt-Transistor mit isolierter Gate-Elektrode, Verfahren zu seiner Herstellung und Verwendung eines solchen Feldeffekt-Transistors in einer integrierten Schaltung
DE1936899A1 (de) Baugruppentraeger fuer Steuer- bzw. Regelanlagen
DE2916732A1 (de) Verfahren zur herstellung eines fadenfoermigen widerstandselementes fuer eine integrierte schaltung
DE3024296A1 (de) Doppelgatter-metalloxid-feldeffekt- halbleiterelement
DE2408402A1 (de) Verfahren zur herstellung integrierter schaltungen bzw. nach einem solchen verfahren hergestellte integrierte halbleiterschaltungseinheit
DE2514011C2 (de) Gehäuse für ein Halbleiterelement
DE2553591C2 (de) Speichermatrix mit einem oder mehreren Ein-Transistor-Speicherelementen
DE1160551B (de) Anordnung der Schaltungselemente einer logischen Schaltung mit Halbleiterdioden in einem und als Teile eines einkristallinen Halbleiterkoerpers
DE1639458B1 (de) Halbleiteranordnung
DE2414222B2 (de) MeB- und Prüfverfahren zur Bestimmung der Stromverstärkung eines Transistors während der Herstellung
DE1919507C3 (de) Kondensatorüberladungsvorrichtung
DE1514254C (de) Halbleiterbauelement

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee