DE1564336A1 - Isolierung fuer Halbleiter - Google Patents

Isolierung fuer Halbleiter

Info

Publication number
DE1564336A1
DE1564336A1 DE19661564336 DE1564336A DE1564336A1 DE 1564336 A1 DE1564336 A1 DE 1564336A1 DE 19661564336 DE19661564336 DE 19661564336 DE 1564336 A DE1564336 A DE 1564336A DE 1564336 A1 DE1564336 A1 DE 1564336A1
Authority
DE
Germany
Prior art keywords
glass
semiconductor
semiconductor structure
areas
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661564336
Other languages
German (de)
English (en)
Inventor
Fordemwalt Newton James
Bernard Van Pul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE1564336A1 publication Critical patent/DE1564336A1/de
Pending legal-status Critical Current

Links

Classifications

    • H10P90/1914—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10W10/019—
    • H10W10/10—
    • H10W10/181—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Element Separation (AREA)
DE19661564336 1965-06-28 1966-06-24 Isolierung fuer Halbleiter Pending DE1564336A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46753165A 1965-06-28 1965-06-28
US467422A US3407479A (en) 1965-06-28 1965-06-28 Isolation of semiconductor devices

Publications (1)

Publication Number Publication Date
DE1564336A1 true DE1564336A1 (de) 1969-11-06

Family

ID=27042049

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661564336 Pending DE1564336A1 (de) 1965-06-28 1966-06-24 Isolierung fuer Halbleiter

Country Status (4)

Country Link
US (2) US3407479A (enExample)
DE (1) DE1564336A1 (enExample)
GB (1) GB1076440A (enExample)
NL (1) NL6608915A (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577044A (en) * 1966-03-08 1971-05-04 Ibm Integrated semiconductor devices and fabrication methods therefor
US3489952A (en) * 1967-05-15 1970-01-13 Singer Co Encapsulated microelectronic devices
US3490140A (en) * 1967-10-05 1970-01-20 Bell Telephone Labor Inc Methods for making semiconductor devices
US3574932A (en) * 1968-08-12 1971-04-13 Motorola Inc Thin-film beam-lead resistors
US3844858A (en) * 1968-12-31 1974-10-29 Texas Instruments Inc Process for controlling the thickness of a thin layer of semiconductor material and semiconductor substrate
US3619739A (en) * 1969-01-16 1971-11-09 Signetics Corp Bulk resistor and integrated circuit using the same
US3859717A (en) * 1970-12-21 1975-01-14 Rockwell International Corp Method of manufacturing control electrodes for charge coupled circuits and the like
JPS5738965B2 (enExample) * 1972-07-04 1982-08-18
US3974006A (en) * 1975-03-21 1976-08-10 Valentin Rodriguez Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrate
JPS5247686A (en) * 1975-10-15 1977-04-15 Toshiba Corp Semiconductor device and process for production of same
JPS5252582A (en) * 1975-10-25 1977-04-27 Toshiba Corp Device and production for semiconductor
US4335501A (en) * 1979-10-31 1982-06-22 The General Electric Company Limited Manufacture of monolithic LED arrays for electroluminescent display devices
JPH0671043B2 (ja) * 1984-08-31 1994-09-07 株式会社東芝 シリコン結晶体構造の製造方法
DE68927871T2 (de) * 1988-11-09 1997-07-03 Sony Corp Herstellungsverfahren eines Halbleiterwafers
US5001075A (en) * 1989-04-03 1991-03-19 Motorola Fabrication of dielectrically isolated semiconductor device
US5145795A (en) * 1990-06-25 1992-09-08 Motorola, Inc. Semiconductor device and method therefore
JP3019430B2 (ja) * 1991-01-21 2000-03-13 ソニー株式会社 半導体集積回路装置
JP3344138B2 (ja) * 1995-01-30 2002-11-11 株式会社日立製作所 半導体複合センサ
US5691230A (en) 1996-09-04 1997-11-25 Micron Technology, Inc. Technique for producing small islands of silicon on insulator
US6211039B1 (en) 1996-11-12 2001-04-03 Micron Technology, Inc. Silicon-on-insulator islands and method for their formation
US6093623A (en) * 1998-08-04 2000-07-25 Micron Technology, Inc. Methods for making silicon-on-insulator structures
US6423613B1 (en) 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
US6524890B2 (en) 1999-11-17 2003-02-25 Denso Corporation Method for manufacturing semiconductor device having element isolation structure
US20020020898A1 (en) * 2000-08-16 2002-02-21 Vu Quat T. Microelectronic substrates with integrated devices
US20020070443A1 (en) * 2000-12-08 2002-06-13 Xiao-Chun Mu Microelectronic package having an integrated heat sink and build-up layers
US6852167B2 (en) 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7601649B2 (en) 2004-08-02 2009-10-13 Micron Technology, Inc. Zirconium-doped tantalum oxide films
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7591958B2 (en) * 2004-09-14 2009-09-22 Stmicroelectronics Sa Thin glass chip for an electronic component and manufacturing method
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7776765B2 (en) 2006-08-31 2010-08-17 Micron Technology, Inc. Tantalum silicon oxynitride high-k dielectrics and metal gates
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3247428A (en) * 1961-09-29 1966-04-19 Ibm Coated objects and methods of providing the protective coverings therefor
US3300832A (en) * 1963-06-28 1967-01-31 Rca Corp Method of making composite insulatorsemiconductor wafer
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments
US3332137A (en) * 1964-09-28 1967-07-25 Rca Corp Method of isolating chips of a wafer of semiconductor material
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
US3343255A (en) * 1965-06-14 1967-09-26 Westinghouse Electric Corp Structures for semiconductor integrated circuits and methods of forming them
US3390022A (en) * 1965-06-30 1968-06-25 North American Rockwell Semiconductor device and process for producing same

Also Published As

Publication number Publication date
US3457123A (en) 1969-07-22
US3407479A (en) 1968-10-29
GB1076440A (en) 1967-07-19
NL6608915A (enExample) 1966-12-29

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