DE1544273A1 - Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall - Google Patents
Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen HalbleitergrundkristallInfo
- Publication number
- DE1544273A1 DE1544273A1 DE19651544273 DE1544273A DE1544273A1 DE 1544273 A1 DE1544273 A1 DE 1544273A1 DE 19651544273 DE19651544273 DE 19651544273 DE 1544273 A DE1544273 A DE 1544273A DE 1544273 A1 DE1544273 A1 DE 1544273A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- base crystal
- gas phase
- dopant
- semiconductor base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 239000013078 crystal Substances 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 16
- 239000000463 material Substances 0.000 title claims description 13
- 239000002019 doping agent Substances 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 18
- 230000000873 masking effect Effects 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004028 SiCU Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0100933 | 1965-12-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1544273A1 true DE1544273A1 (de) | 1969-09-04 |
Family
ID=7523384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651544273 Pending DE1544273A1 (de) | 1965-12-13 | 1965-12-13 | Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall |
Country Status (9)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0410390A2 (en) * | 1989-07-27 | 1991-01-30 | Seiko Instruments Inc. | Method of producing semiconductor device |
| WO2012170087A1 (en) * | 2011-06-10 | 2012-12-13 | Massachusetts Institute Of Technology | High-concentration active doping in semiconductors and semiconductor devices produced by such doping |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3577045A (en) * | 1968-09-18 | 1971-05-04 | Gen Electric | High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities |
| US3601888A (en) * | 1969-04-25 | 1971-08-31 | Gen Electric | Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor |
| US3717514A (en) * | 1970-10-06 | 1973-02-20 | Motorola Inc | Single crystal silicon contact for integrated circuits and method for making same |
| US3699646A (en) * | 1970-12-28 | 1972-10-24 | Intel Corp | Integrated circuit structure and method for making integrated circuit structure |
| US3940288A (en) | 1973-05-16 | 1976-02-24 | Fujitsu Limited | Method of making a semiconductor device |
| US3880676A (en) * | 1973-10-29 | 1975-04-29 | Rca Corp | Method of making a semiconductor device |
| JPS5950113B2 (ja) * | 1975-11-05 | 1984-12-06 | 株式会社東芝 | 半導体装置 |
| US4063973A (en) * | 1975-11-10 | 1977-12-20 | Tokyo Shibaura Electric Co., Ltd. | Method of making a semiconductor device |
| JPS5317081A (en) * | 1976-07-30 | 1978-02-16 | Sharp Corp | Production of i2l device |
| GB1548520A (en) * | 1976-08-27 | 1979-07-18 | Tokyo Shibaura Electric Co | Method of manufacturing a semiconductor device |
| US4050967A (en) * | 1976-12-09 | 1977-09-27 | Rca Corporation | Method of selective aluminum diffusion |
| US4157926A (en) * | 1977-02-24 | 1979-06-12 | The United States Of America As Represented By The Secretary Of The Navy | Method of fabricating a high electrical frequency infrared detector by vacuum deposition |
| US4274892A (en) * | 1978-12-14 | 1981-06-23 | Trw Inc. | Dopant diffusion method of making semiconductor products |
| US4472212A (en) * | 1982-02-26 | 1984-09-18 | At&T Bell Laboratories | Method for fabricating a semiconductor device |
| EP0101737A4 (en) * | 1982-02-26 | 1984-08-20 | Western Electric Co | DIFFUSION OF LOW REGIONS. |
| US4698104A (en) * | 1984-12-06 | 1987-10-06 | Xerox Corporation | Controlled isotropic doping of semiconductor materials |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3089794A (en) * | 1959-06-30 | 1963-05-14 | Ibm | Fabrication of pn junctions by deposition followed by diffusion |
| NL268758A (US20080293856A1-20081127-C00150.png) * | 1960-09-20 | |||
| US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
| NL297002A (US20080293856A1-20081127-C00150.png) * | 1962-08-23 | 1900-01-01 | ||
| US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
| US3326729A (en) * | 1963-08-20 | 1967-06-20 | Hughes Aircraft Co | Epitaxial method for the production of microcircuit components |
| DE1514807B2 (de) * | 1964-04-15 | 1971-09-02 | Texas Instruments Inc., Dallas. Tex. (V.St.A.) | Verfahren zum herstellen einer planaren halbleiteranordnung |
-
1965
- 1965-12-13 DE DE19651544273 patent/DE1544273A1/de active Pending
-
1966
- 1966-10-13 NL NL6614433A patent/NL6614433A/xx unknown
- 1966-12-05 US US598986A patent/US3502517A/en not_active Expired - Lifetime
- 1966-12-09 CH CH1760266A patent/CH489906A/de not_active IP Right Cessation
- 1966-12-12 SE SE17035/66A patent/SE331719B/xx unknown
- 1966-12-12 FR FR87056A patent/FR1504977A/fr not_active Expired
- 1966-12-12 GB GB55471/66A patent/GB1100780A/en not_active Expired
- 1966-12-12 AT AT1145766A patent/AT264591B/de active
- 1966-12-13 JP JP41081285A patent/JPS4830703B1/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0410390A2 (en) * | 1989-07-27 | 1991-01-30 | Seiko Instruments Inc. | Method of producing semiconductor device |
| EP0410390A3 (en) * | 1989-07-27 | 1993-02-24 | Seiko Instruments Inc. | Method of producing semiconductor device |
| WO2012170087A1 (en) * | 2011-06-10 | 2012-12-13 | Massachusetts Institute Of Technology | High-concentration active doping in semiconductors and semiconductor devices produced by such doping |
| US9692209B2 (en) | 2011-06-10 | 2017-06-27 | Massachusetts Institute Of Technology | High-concentration active doping in semiconductors and semiconductor devices produced by such doping |
| US10680413B2 (en) | 2011-06-10 | 2020-06-09 | Massachusetts Institute Of Technology | Method for high-concentration doping of germanium with phosphorous |
Also Published As
| Publication number | Publication date |
|---|---|
| SE331719B (US20080293856A1-20081127-C00150.png) | 1971-01-11 |
| GB1100780A (en) | 1968-01-24 |
| CH489906A (de) | 1970-04-30 |
| AT264591B (de) | 1968-09-10 |
| NL6614433A (US20080293856A1-20081127-C00150.png) | 1967-06-14 |
| US3502517A (en) | 1970-03-24 |
| FR1504977A (fr) | 1967-12-08 |
| JPS4830703B1 (US20080293856A1-20081127-C00150.png) | 1973-09-22 |
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