DE1544261C3 - Verfahren zum epitaktischen Abscheiden einer einkristallinen Schicht eines nach dem Diamant- oder nach Zinkblendegitter kristallisierenden Halbleitermaterials - Google Patents

Verfahren zum epitaktischen Abscheiden einer einkristallinen Schicht eines nach dem Diamant- oder nach Zinkblendegitter kristallisierenden Halbleitermaterials

Info

Publication number
DE1544261C3
DE1544261C3 DE1544261A DE1544261A DE1544261C3 DE 1544261 C3 DE1544261 C3 DE 1544261C3 DE 1544261 A DE1544261 A DE 1544261A DE 1544261 A DE1544261 A DE 1544261A DE 1544261 C3 DE1544261 C3 DE 1544261C3
Authority
DE
Germany
Prior art keywords
substrate
spinel
deposition
semiconductor
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1544261A
Other languages
German (de)
English (en)
Other versions
DE1544261B2 (de
DE1544261A1 (de
Inventor
Hartmut Dipl.-Chem.Dr. 8000 Muenchen Seiter
Christian Dr. Azmoos Zaminer (Schweiz)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of DE1544261A1 publication Critical patent/DE1544261A1/de
Publication of DE1544261B2 publication Critical patent/DE1544261B2/de
Application granted granted Critical
Publication of DE1544261C3 publication Critical patent/DE1544261C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
DE1544261A 1965-03-30 1965-03-30 Verfahren zum epitaktischen Abscheiden einer einkristallinen Schicht eines nach dem Diamant- oder nach Zinkblendegitter kristallisierenden Halbleitermaterials Expired DE1544261C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0096266 1965-03-30

Publications (3)

Publication Number Publication Date
DE1544261A1 DE1544261A1 (de) 1970-03-12
DE1544261B2 DE1544261B2 (de) 1974-06-12
DE1544261C3 true DE1544261C3 (de) 1975-12-18

Family

ID=7519924

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1544261A Expired DE1544261C3 (de) 1965-03-30 1965-03-30 Verfahren zum epitaktischen Abscheiden einer einkristallinen Schicht eines nach dem Diamant- oder nach Zinkblendegitter kristallisierenden Halbleitermaterials

Country Status (6)

Country Link
US (1) US3424955A (enExample)
AT (1) AT259021B (enExample)
CH (1) CH459964A (enExample)
DE (1) DE1544261C3 (enExample)
GB (1) GB1130718A (enExample)
NL (1) NL146719B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3791882A (en) * 1966-08-31 1974-02-12 K Ogiue Method of manufacturing semiconductor devices utilizing simultaneous deposition of monocrystalline and polycrystalline regions
FR1597033A (enExample) * 1968-06-19 1970-06-22
US3548266A (en) * 1968-11-14 1970-12-15 Sprague Electric Co Nickel-nickel oxide capacitor
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
US4404265A (en) * 1969-10-01 1983-09-13 Rockwell International Corporation Epitaxial composite and method of making
US3869321A (en) * 1972-01-20 1975-03-04 Signetics Corp Method for fabricating precision layer silicon-over-oxide semiconductor structure
BE795737A (fr) * 1972-02-21 1973-06-18 Siemens Ag Procede pour fabriquer des transistors a effet de champ a canal
US4177321A (en) * 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
JPS5532021B2 (enExample) * 1974-10-26 1980-08-22
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2537256A (en) * 1946-07-24 1951-01-09 Bell Telephone Labor Inc Light-sensitive electric device
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
US3082283A (en) * 1959-11-25 1963-03-19 Ibm Radiant energy responsive semiconductor device
US3210624A (en) * 1961-04-24 1965-10-05 Monsanto Co Article having a silicon carbide substrate with an epitaxial layer of boron phosphide

Also Published As

Publication number Publication date
US3424955A (en) 1969-01-28
CH459964A (de) 1968-07-31
DE1544261B2 (de) 1974-06-12
GB1130718A (en) 1968-10-16
NL6603443A (enExample) 1966-10-03
DE1544261A1 (de) 1970-03-12
AT259021B (de) 1967-12-27
NL146719B (nl) 1975-08-15

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977