DE1544175B2 - Verfahren zur herstellung duenner einkristalliner halbleiterplaettchen auf metallischem traeger - Google Patents

Verfahren zur herstellung duenner einkristalliner halbleiterplaettchen auf metallischem traeger

Info

Publication number
DE1544175B2
DE1544175B2 DE19641544175 DE1544175A DE1544175B2 DE 1544175 B2 DE1544175 B2 DE 1544175B2 DE 19641544175 DE19641544175 DE 19641544175 DE 1544175 A DE1544175 A DE 1544175A DE 1544175 B2 DE1544175 B2 DE 1544175B2
Authority
DE
Germany
Prior art keywords
layer
silicon
germanium
carrier
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19641544175
Other languages
German (de)
English (en)
Other versions
DE1544175A1 (de
Inventor
Robert Grenoble Montmory (Frank reich)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Publication of DE1544175A1 publication Critical patent/DE1544175A1/de
Publication of DE1544175B2 publication Critical patent/DE1544175B2/de
Pending legal-status Critical Current

Links

Classifications

    • H10W72/30—
    • H10P95/00—
    • H10W72/073—
    • H10W72/07336—
    • H10W72/07337—
    • H10W72/5522—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
DE19641544175 1963-04-24 1964-04-24 Verfahren zur herstellung duenner einkristalliner halbleiterplaettchen auf metallischem traeger Pending DE1544175B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR932543A FR1362634A (fr) 1963-04-24 1963-04-24 Procédé de fabrication par épitaxie de plaques minces semiconductrices sur support métallique et plaques semiconductrices ainsi fabriquées

Publications (2)

Publication Number Publication Date
DE1544175A1 DE1544175A1 (de) 1969-07-17
DE1544175B2 true DE1544175B2 (de) 1972-10-19

Family

ID=8802314

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19641544175 Pending DE1544175B2 (de) 1963-04-24 1964-04-24 Verfahren zur herstellung duenner einkristalliner halbleiterplaettchen auf metallischem traeger

Country Status (4)

Country Link
US (1) US3382099A (enExample)
DE (1) DE1544175B2 (enExample)
FR (1) FR1362634A (enExample)
GB (1) GB1050659A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3483038A (en) * 1967-01-05 1969-12-09 Rca Corp Integrated array of thin-film photovoltaic cells and method of making same
US3519504A (en) * 1967-01-13 1970-07-07 Ibm Method for etching silicon nitride films with sharp edge definition
GB1243247A (en) * 1968-03-04 1971-08-18 Texas Instruments Inc Ohmic contact and electrical interconnection system for electronic devices
JPS503910B1 (enExample) * 1968-09-09 1975-02-12
US4116751A (en) * 1975-10-08 1978-09-26 Solomon Zaromb Methods and apparatus for producing unsupported monocrystalline films of silicon and of other materials
US4115625A (en) * 1976-11-01 1978-09-19 Sotec Corporation Sodium thallium type crystal on crystalline layer
US4042447A (en) * 1976-11-01 1977-08-16 Sotec Corporation Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate
US4255208A (en) * 1979-05-25 1981-03-10 Ramot University Authority For Applied Research And Industrial Development Ltd. Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer
US4448854A (en) * 1980-10-30 1984-05-15 The United States Of America As Represented By The United States Department Of Energy Coherent multilayer crystals and method of making
US5112699A (en) * 1990-03-12 1992-05-12 International Business Machines Corporation Metal-metal epitaxy on substrates and method of making
EP1905270B8 (en) * 2005-07-18 2012-04-11 Datec Coating Corporation Low temperature fired, lead-free thick film heating element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2537256A (en) * 1946-07-24 1951-01-09 Bell Telephone Labor Inc Light-sensitive electric device
US2665998A (en) * 1950-03-18 1954-01-12 Fansteel Metallurgical Corp Method of preparing highly refractory bodies

Also Published As

Publication number Publication date
FR1362634A (fr) 1964-06-05
GB1050659A (enExample)
DE1544175A1 (de) 1969-07-17
US3382099A (en) 1968-05-07

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