GB1050659A - - Google Patents
Info
- Publication number
- GB1050659A GB1050659A GB1050659DA GB1050659A GB 1050659 A GB1050659 A GB 1050659A GB 1050659D A GB1050659D A GB 1050659DA GB 1050659 A GB1050659 A GB 1050659A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- depositing
- vapour
- april
- dissolve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H10W72/30—
-
- H10P95/00—
-
- H10W72/073—
-
- H10W72/07336—
-
- H10W72/07337—
-
- H10W72/5522—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/915—Separating from substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/142—Semiconductor-metal-semiconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR932543A FR1362634A (fr) | 1963-04-24 | 1963-04-24 | Procédé de fabrication par épitaxie de plaques minces semiconductrices sur support métallique et plaques semiconductrices ainsi fabriquées |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1050659A true GB1050659A (enExample) |
Family
ID=8802314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1050659D Active GB1050659A (enExample) | 1963-04-24 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3382099A (enExample) |
| DE (1) | DE1544175B2 (enExample) |
| FR (1) | FR1362634A (enExample) |
| GB (1) | GB1050659A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3483038A (en) * | 1967-01-05 | 1969-12-09 | Rca Corp | Integrated array of thin-film photovoltaic cells and method of making same |
| US3519504A (en) * | 1967-01-13 | 1970-07-07 | Ibm | Method for etching silicon nitride films with sharp edge definition |
| GB1243247A (en) * | 1968-03-04 | 1971-08-18 | Texas Instruments Inc | Ohmic contact and electrical interconnection system for electronic devices |
| JPS503910B1 (enExample) * | 1968-09-09 | 1975-02-12 | ||
| US4116751A (en) * | 1975-10-08 | 1978-09-26 | Solomon Zaromb | Methods and apparatus for producing unsupported monocrystalline films of silicon and of other materials |
| US4115625A (en) * | 1976-11-01 | 1978-09-19 | Sotec Corporation | Sodium thallium type crystal on crystalline layer |
| US4042447A (en) * | 1976-11-01 | 1977-08-16 | Sotec Corporation | Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate |
| US4255208A (en) * | 1979-05-25 | 1981-03-10 | Ramot University Authority For Applied Research And Industrial Development Ltd. | Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer |
| US4448854A (en) * | 1980-10-30 | 1984-05-15 | The United States Of America As Represented By The United States Department Of Energy | Coherent multilayer crystals and method of making |
| US5112699A (en) * | 1990-03-12 | 1992-05-12 | International Business Machines Corporation | Metal-metal epitaxy on substrates and method of making |
| EP1905270B8 (en) * | 2005-07-18 | 2012-04-11 | Datec Coating Corporation | Low temperature fired, lead-free thick film heating element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2537256A (en) * | 1946-07-24 | 1951-01-09 | Bell Telephone Labor Inc | Light-sensitive electric device |
| US2665998A (en) * | 1950-03-18 | 1954-01-12 | Fansteel Metallurgical Corp | Method of preparing highly refractory bodies |
-
0
- GB GB1050659D patent/GB1050659A/en active Active
-
1963
- 1963-04-24 FR FR932543A patent/FR1362634A/fr not_active Expired
-
1964
- 1964-04-20 US US360925A patent/US3382099A/en not_active Expired - Lifetime
- 1964-04-24 DE DE19641544175 patent/DE1544175B2/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1544175B2 (de) | 1972-10-19 |
| FR1362634A (fr) | 1964-06-05 |
| DE1544175A1 (de) | 1969-07-17 |
| US3382099A (en) | 1968-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1050659A (enExample) | ||
| GB916887A (en) | Improvements in or relating to the manufacture of semiconductor devices | |
| GB1070991A (en) | Processes for the growth of crystalline bodies | |
| GB1157581A (en) | Improvements in and relating to Ohmic Contacts. | |
| GB1148409A (en) | Improvements in and relating to semiconductor devices | |
| JPS542693B1 (enExample) | ||
| GB1371537A (en) | Method of depositing an epitaxial semi-conductor layer from the liquid phase | |
| GB1160213A (en) | A Method of Growing Semiconductor Crystals | |
| GB843869A (en) | Improvements in or relating to silicon semiconductor devices and to processes for producing same | |
| GB1090649A (en) | Surface treatment for semiconductor devices | |
| GB1432877A (en) | Substrates of compound semiconductors | |
| GB929559A (en) | Method of growing epitaxial semiconductor layers | |
| ES474770A1 (es) | Un procedimiento de fabricacion de silicio policristalino | |
| GB933212A (en) | Improvements in or relating to semi-conductor devices | |
| GB1537298A (en) | Method of producing a metal layer on a substrate | |
| GB998199A (en) | Improvements in or relating to the manufacture of semiconductor devices | |
| GB1286426A (en) | Improvements in or relating to the production of contact metal layers on semiconductor components | |
| JPS5615070A (en) | Semiconductor device | |
| GB1133376A (en) | Semiconductor device and method of making same | |
| GB1053406A (enExample) | ||
| JPS57115864A (en) | Compound semiconductor device | |
| GB1197315A (en) | Semiconductor Device | |
| GB1056720A (en) | Improved method of epitaxially vapour depositing semiconductor material | |
| JPS6447850A (en) | Manufacture of thermoelement | |
| JPS55145366A (en) | Ohmic electrode of n-type semiconductor of groups 3-5 metals in periodic table and forming method of the same |