DE1539644B1 - Thyristor mit einer Halbleiterscheibe mit vier schichtfoermigen Zonen - Google Patents

Thyristor mit einer Halbleiterscheibe mit vier schichtfoermigen Zonen

Info

Publication number
DE1539644B1
DE1539644B1 DE19661539644 DE1539644A DE1539644B1 DE 1539644 B1 DE1539644 B1 DE 1539644B1 DE 19661539644 DE19661539644 DE 19661539644 DE 1539644 A DE1539644 A DE 1539644A DE 1539644 B1 DE1539644 B1 DE 1539644B1
Authority
DE
Germany
Prior art keywords
zone
face
area
conductivity type
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19661539644
Other languages
German (de)
English (en)
Inventor
Edouard Dipl-Ing Eugster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of DE1539644B1 publication Critical patent/DE1539644B1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE19661539644 1966-04-22 1966-05-13 Thyristor mit einer Halbleiterscheibe mit vier schichtfoermigen Zonen Withdrawn DE1539644B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH589466A CH436494A (de) 1966-04-22 1966-04-22 Steuerbares Halbleiterventil

Publications (1)

Publication Number Publication Date
DE1539644B1 true DE1539644B1 (de) 1970-07-02

Family

ID=4301121

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19661539644 Withdrawn DE1539644B1 (de) 1966-04-22 1966-05-13 Thyristor mit einer Halbleiterscheibe mit vier schichtfoermigen Zonen
DE6607598U Expired DE6607598U (de) 1966-04-22 1966-05-13 Steuerbares halbleiterventil.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE6607598U Expired DE6607598U (de) 1966-04-22 1966-05-13 Steuerbares halbleiterventil.

Country Status (6)

Country Link
US (1) US3432733A (nl)
CH (1) CH436494A (nl)
DE (2) DE1539644B1 (nl)
GB (1) GB1106637A (nl)
NL (1) NL154624B (nl)
SE (1) SE325645B (nl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2300754A1 (de) * 1973-01-08 1974-07-11 Siemens Ag Thyristor
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR84004E (fr) * 1961-05-09 1964-11-13 Siemens Ag Dispositif semi-conducteur
US3277352A (en) * 1963-03-14 1966-10-04 Itt Four layer semiconductor device
US3337783A (en) * 1964-01-16 1967-08-22 Westinghouse Electric Corp Shorted emitter controlled rectifier with improved turn-off gain
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3337782A (en) * 1964-04-01 1967-08-22 Westinghouse Electric Corp Semiconductor controlled rectifier having a shorted emitter at a plurality of points

Also Published As

Publication number Publication date
US3432733A (en) 1969-03-11
CH436494A (de) 1967-05-31
NL154624B (nl) 1977-09-15
GB1106637A (en) 1968-03-20
DE6607598U (de) 1971-03-25
NL6702749A (nl) 1967-10-23
SE325645B (nl) 1970-07-06

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
EF Willingness to grant licences
8339 Ceased/non-payment of the annual fee