DE1514457A1 - Halbleiteranordnung mit wenigstens einem UEbergang zwischen einem Halbleiter und einem Metall - Google Patents
Halbleiteranordnung mit wenigstens einem UEbergang zwischen einem Halbleiter und einem MetallInfo
- Publication number
- DE1514457A1 DE1514457A1 DE19651514457 DE1514457A DE1514457A1 DE 1514457 A1 DE1514457 A1 DE 1514457A1 DE 19651514457 DE19651514457 DE 19651514457 DE 1514457 A DE1514457 A DE 1514457A DE 1514457 A1 DE1514457 A1 DE 1514457A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- metal
- semiconducting
- arrangement according
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 229910052751 metal Inorganic materials 0.000 title claims description 38
- 239000002184 metal Substances 0.000 title claims description 38
- 230000007704 transition Effects 0.000 title description 10
- 239000013598 vector Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 150000003624 transition metals Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims 2
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 102000016550 Complement Factor H Human genes 0.000 description 1
- 108010053085 Complement Factor H Proteins 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012885 constant function Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0096890 | 1965-05-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1514457A1 true DE1514457A1 (de) | 1969-10-16 |
Family
ID=7520359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651514457 Pending DE1514457A1 (de) | 1965-05-03 | 1965-05-03 | Halbleiteranordnung mit wenigstens einem UEbergang zwischen einem Halbleiter und einem Metall |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT266217B (enrdf_load_stackoverflow) |
| CH (1) | CH468717A (enrdf_load_stackoverflow) |
| DE (1) | DE1514457A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1144147A (enrdf_load_stackoverflow) |
| NL (1) | NL6605020A (enrdf_load_stackoverflow) |
| SE (1) | SE323148B (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4378629A (en) | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
| US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
-
1965
- 1965-05-03 DE DE19651514457 patent/DE1514457A1/de active Pending
-
1966
- 1966-04-14 NL NL6605020A patent/NL6605020A/xx unknown
- 1966-05-02 CH CH634766A patent/CH468717A/de unknown
- 1966-05-02 AT AT413266A patent/AT266217B/de active
- 1966-05-02 GB GB19161/66A patent/GB1144147A/en not_active Expired
- 1966-05-03 SE SE6068/66A patent/SE323148B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE323148B (enrdf_load_stackoverflow) | 1970-04-27 |
| AT266217B (de) | 1968-11-11 |
| CH468717A (de) | 1969-02-15 |
| GB1144147A (en) | 1969-03-05 |
| NL6605020A (enrdf_load_stackoverflow) | 1966-11-04 |
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