GB1144147A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1144147A
GB1144147A GB1916166A GB1916166A GB1144147A GB 1144147 A GB1144147 A GB 1144147A GB 1916166 A GB1916166 A GB 1916166A GB 1916166 A GB1916166 A GB 1916166A GB 1144147 A GB1144147 A GB 1144147A
Authority
GB
United Kingdom
Prior art keywords
metal
semi
conductor
emitter
wave number
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1916166A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1144147A publication Critical patent/GB1144147A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,144,147. Transistors. SIEMENS A.G. 2 May, 1966 [3 May, 1965], No. 19161/66. Heading H1K. In a semi-conductor device such as metal base transistor, with a metal layer between two semiconductor layers, reflection at the "collector" junction is minimized by employing a semiconductor where the wave number k at the conduction band minima is other than zero (e.g. germanium or silicon) and the average wave number vector in the semi-conductor at the end of the conduction band is made substantially equal to the average wave number vector in the metal. The metal layer is a transition metal, semi-metal (e.g. antimony or bismuth) or an alloy with its composition selected to provide the correct k-number. Orientation of the semi-conductor is utilized since this affects the k-number. Fig. 2 shows a metal base transistor with N-type emitter and collector regions 5 and 7 and intermediate metallic layer 6. The emitter and collector regions are orientated in the same direction. The metal has a high k-value compared with the material of the emitter to give a high "refracting index" in the metal relative to the semi-conductor to produce tightly bunched electron beams. At least the emitter zone should be monocrystalline.
GB1916166A 1965-05-03 1966-05-02 Improvements in or relating to semiconductor devices Expired GB1144147A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0096890 1965-05-03

Publications (1)

Publication Number Publication Date
GB1144147A true GB1144147A (en) 1969-03-05

Family

ID=7520359

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1916166A Expired GB1144147A (en) 1965-05-03 1966-05-02 Improvements in or relating to semiconductor devices

Country Status (6)

Country Link
AT (1) AT266217B (en)
CH (1) CH468717A (en)
DE (1) DE1514457A1 (en)
GB (1) GB1144147A (en)
NL (1) NL6605020A (en)
SE (1) SE323148B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor

Also Published As

Publication number Publication date
DE1514457A1 (en) 1969-10-16
NL6605020A (en) 1966-11-04
SE323148B (en) 1970-04-27
CH468717A (en) 1969-02-15
AT266217B (en) 1968-11-11

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