DE1514398A1 - Halbleiteranordnung - Google Patents
HalbleiteranordnungInfo
- Publication number
- DE1514398A1 DE1514398A1 DE19651514398 DE1514398A DE1514398A1 DE 1514398 A1 DE1514398 A1 DE 1514398A1 DE 19651514398 DE19651514398 DE 19651514398 DE 1514398 A DE1514398 A DE 1514398A DE 1514398 A1 DE1514398 A1 DE 1514398A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- semiconductor
- base
- emitter
- opposite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 52
- 239000002184 metal Substances 0.000 claims description 5
- 238000007667 floating Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 235000014277 Clidemia hirta Nutrition 0.000 claims 1
- 241000069219 Henriettea Species 0.000 claims 1
- 239000003973 paint Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0095365 | 1965-02-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1514398A1 true DE1514398A1 (de) | 1969-09-11 |
Family
ID=7519320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651514398 Pending DE1514398A1 (de) | 1965-02-09 | 1965-02-09 | Halbleiteranordnung |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0220500A1 (en) * | 1985-09-25 | 1987-05-06 | Kabushiki Kaisha Toshiba | Semiconductor device with reduced capacitive load and manufacturing process thereof |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3506887A (en) * | 1966-02-23 | 1970-04-14 | Motorola Inc | Semiconductor device and method of making same |
| US3518498A (en) * | 1967-12-27 | 1970-06-30 | Gen Electric | High-q,high-frequency silicon/silicon-dioxide capacitor |
| SE337430B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-11-17 | 1971-08-09 | Inst Halvledarforskning Ab | |
| US4296336A (en) * | 1979-01-22 | 1981-10-20 | General Semiconductor Co., Inc. | Switching circuit and method for avoiding secondary breakdown |
| US4660069A (en) * | 1983-12-08 | 1987-04-21 | Motorola, Inc. | Device with captivate chip capacitor devices and method of making the same |
| DE3586268T2 (de) * | 1984-05-03 | 1993-02-25 | Digital Equipment Corp | Eingangs-schutzanordnung fuer vlsi-schaltungsanordnungen. |
| JP2761961B2 (ja) * | 1990-04-06 | 1998-06-04 | 健一 上山 | 半導体可変容量素子 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3202891A (en) * | 1960-11-30 | 1965-08-24 | Gen Telephone & Elect | Voltage variable capacitor with strontium titanate dielectric |
| NL274830A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1961-04-12 |
-
1965
- 1965-02-09 DE DE19651514398 patent/DE1514398A1/de active Pending
-
1966
- 1966-01-07 NL NL6600223A patent/NL6600223A/xx unknown
- 1966-02-03 US US524886A patent/US3400310A/en not_active Expired - Lifetime
- 1966-02-07 CH CH167766A patent/CH447388A/de unknown
- 1966-02-08 GB GB5386/66A patent/GB1135555A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0220500A1 (en) * | 1985-09-25 | 1987-05-06 | Kabushiki Kaisha Toshiba | Semiconductor device with reduced capacitive load and manufacturing process thereof |
| US4960725A (en) * | 1985-09-25 | 1990-10-02 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing process for providing device regions on the semiconductor device and isolation regions to isolate the device regions from each other. |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6600223A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1966-08-10 |
| CH447388A (de) | 1967-11-30 |
| GB1135555A (en) | 1968-12-04 |
| US3400310A (en) | 1968-09-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2922334C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE1489893B1 (de) | Integrierte halbleiterschaltung | |
| DE1954694C3 (de) | Signalspeicherplatte für eine Aufnahmeröhre mit einer Elektronenstrahlquelle und Verfahren zu ihrer Herstellung | |
| DE102005023026B4 (de) | Leistungshalbleiterbauelement mit Plattenkondensator-Struktur | |
| CH661150A5 (de) | Verfahren zum erzeugen einer schmalen nut in einem substratgebiet, insbesondere einem halbleitersubstratgebiet. | |
| DE2712114C2 (de) | Schaltbare Halbleitervorrichtung und Verfahren zu ihrer Herstellung | |
| DE1437435B2 (de) | Hochfrequenzverstärker mit Feldeffekttransistor | |
| DE1514017A1 (de) | Halbleiteranordnung | |
| DE1514398A1 (de) | Halbleiteranordnung | |
| DE1614300B2 (de) | Feldeffekttransistor mit isolierter Steuerelektrode | |
| DE2754412A1 (de) | Leistungstransistor und verfahren zu dessen herstellung | |
| DE1514008A1 (de) | Flaechentransistor | |
| DE1293900B (de) | Feldeffekt-Halbleiterbauelement | |
| DE1614250C3 (de) | Halbleiteranordnung mit Gruppen von sich kreuzenden Verbindungen | |
| DE1639177C3 (de) | Monolithisch integrierte Gleichrichterschaltung | |
| DE2746406C2 (de) | Thyristor mit innerer Zündverstärkung und hohem dV/dt-Wert | |
| DE69318346T2 (de) | Schutzdiode für ein vertikales Halbleiterbauelement | |
| AT264587B (de) | Halbleiteranordnung | |
| DE1297239C2 (de) | Leistungstransistor | |
| DE19818296C1 (de) | Hochspannungs-Randabschluß für ein Halbleiterbauelement | |
| EP0156022A2 (de) | Durch Feldeffekt steuerbares Halbleiterbauelement | |
| EP0313722B1 (de) | Schutzanordnung für MOS-Schaltungen | |
| DE2133430A1 (de) | Planar-vierschichtdiode | |
| AT267610B (de) | Halbleitervorrichtung | |
| DE102016123931A1 (de) | Transistor |