DE1514287A1 - Verfahren zum Herstellen von Halbleiterkoerpern - Google Patents
Verfahren zum Herstellen von HalbleiterkoerpernInfo
- Publication number
- DE1514287A1 DE1514287A1 DE19651514287 DE1514287A DE1514287A1 DE 1514287 A1 DE1514287 A1 DE 1514287A1 DE 19651514287 DE19651514287 DE 19651514287 DE 1514287 A DE1514287 A DE 1514287A DE 1514287 A1 DE1514287 A1 DE 1514287A1
- Authority
- DE
- Germany
- Prior art keywords
- alloy
- semiconductor
- silicon
- temperature
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4900064A GB1047900A (en) | 1964-12-02 | 1964-12-02 | Improvements in or relating to semiconductor bodies |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1514287A1 true DE1514287A1 (de) | 1969-05-22 |
Family
ID=26266374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19651514287 Pending DE1514287A1 (de) | 1964-12-02 | 1965-12-01 | Verfahren zum Herstellen von Halbleiterkoerpern |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE1514287A1 (enrdf_load_stackoverflow) |
FR (1) | FR1456309A (enrdf_load_stackoverflow) |
GB (1) | GB1047900A (enrdf_load_stackoverflow) |
NL (1) | NL6515443A (enrdf_load_stackoverflow) |
-
1964
- 1964-12-02 GB GB4900064A patent/GB1047900A/en not_active Expired
-
1965
- 1965-11-27 NL NL6515443A patent/NL6515443A/xx unknown
- 1965-12-01 DE DE19651514287 patent/DE1514287A1/de active Pending
- 1965-12-02 FR FR40664A patent/FR1456309A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1047900A (en) | 1966-11-09 |
FR1456309A (fr) | 1966-10-21 |
NL6515443A (enrdf_load_stackoverflow) | 1966-06-03 |
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