FR1456309A - Procédé de fabrication de corps semi-conducteurs - Google Patents
Procédé de fabrication de corps semi-conducteursInfo
- Publication number
- FR1456309A FR1456309A FR40664A FR40664A FR1456309A FR 1456309 A FR1456309 A FR 1456309A FR 40664 A FR40664 A FR 40664A FR 40664 A FR40664 A FR 40664A FR 1456309 A FR1456309 A FR 1456309A
- Authority
- FR
- France
- Prior art keywords
- alloy
- semi
- disc
- semiconductor body
- manufacturing process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 abstract 5
- 239000000956 alloy Substances 0.000 abstract 5
- 239000010931 gold Substances 0.000 abstract 3
- 229910001020 Au alloy Inorganic materials 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4900064A GB1047900A (en) | 1964-12-02 | 1964-12-02 | Improvements in or relating to semiconductor bodies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1456309A true FR1456309A (fr) | 1966-10-21 |
Family
ID=26266374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR40664A Expired FR1456309A (fr) | 1964-12-02 | 1965-12-02 | Procédé de fabrication de corps semi-conducteurs |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1514287A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1456309A (enrdf_load_stackoverflow) |
| GB (1) | GB1047900A (enrdf_load_stackoverflow) |
| NL (1) | NL6515443A (enrdf_load_stackoverflow) |
-
1964
- 1964-12-02 GB GB4900064A patent/GB1047900A/en not_active Expired
-
1965
- 1965-11-27 NL NL6515443A patent/NL6515443A/xx unknown
- 1965-12-01 DE DE19651514287 patent/DE1514287A1/de active Pending
- 1965-12-02 FR FR40664A patent/FR1456309A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1047900A (en) | 1966-11-09 |
| DE1514287A1 (de) | 1969-05-22 |
| NL6515443A (enrdf_load_stackoverflow) | 1966-06-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IE34446B1 (en) | Processes for forming semiconductor devices and individual semiconductor bodies from a single wafer | |
| GB1154863A (en) | Semiconductor Structures and methods of manufacture | |
| GB1206308A (en) | Method of making semiconductor wafer | |
| US3070466A (en) | Diffusion in semiconductor material | |
| GB1250377A (enrdf_load_stackoverflow) | ||
| BE579805A (fr) | Procédé pour le traitement de surface d'élements semi-conducteurs comportant plusieurs électrodes et au moins une jonction p-n. | |
| GB1160058A (en) | Method for Establishing During Manufacture Regions having Different Carrier Lifetimes in a Semiconductor Body | |
| GB936832A (en) | Improvements relating to the production of p.n. junctions in semi-conductor material | |
| GB1068189A (en) | The production of semiconductor components | |
| FR1456309A (fr) | Procédé de fabrication de corps semi-conducteurs | |
| GB1150934A (en) | Improvements in and relating to semiconductor devices. | |
| US2813817A (en) | Semiconductor devices and their manufacture | |
| GB1086856A (en) | Improvements in or relating to methods of manufacturing semi-conductor devices | |
| GB1053406A (enrdf_load_stackoverflow) | ||
| GB1260567A (en) | Improvements in or relating to semiconductor devices | |
| GB1334902A (en) | Control of beta gain factor of transistors | |
| JPS5618466A (en) | Manufacture of semiconductor device | |
| GB975960A (en) | Improvements in or relating to methods of manufacturing semiconductor devices | |
| GB975990A (en) | Improvements relating to silicon controlled rectifiers | |
| US2861017A (en) | Method of preparing semi-conductor devices | |
| GB1274975A (en) | Improvements in or relating to semiconductor elements having a definite charge carrier life time | |
| GB1380143A (enrdf_load_stackoverflow) | ||
| US3134699A (en) | Method of manufacturing semiconductor devices | |
| GB1065951A (en) | Improvements in or relating to methods of manufacturing semiconductor devices | |
| GB1041466A (en) | Semiconductor devices |