DE1514008B2 - Flaechentransistor - Google Patents
FlaechentransistorInfo
- Publication number
- DE1514008B2 DE1514008B2 DE19651514008 DE1514008A DE1514008B2 DE 1514008 B2 DE1514008 B2 DE 1514008B2 DE 19651514008 DE19651514008 DE 19651514008 DE 1514008 A DE1514008 A DE 1514008A DE 1514008 B2 DE1514008 B2 DE 1514008B2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- zones
- emitter
- base
- transistor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- NQLVQOSNDJXLKG-UHFFFAOYSA-N prosulfocarb Chemical group CCCN(CCC)C(=O)SCC1=CC=CC=C1 NQLVQOSNDJXLKG-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ0027970 | 1965-04-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1514008A1 DE1514008A1 (de) | 1969-08-07 |
| DE1514008B2 true DE1514008B2 (de) | 1972-12-07 |
Family
ID=7203140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651514008 Pending DE1514008B2 (de) | 1965-04-22 | 1965-04-22 | Flaechentransistor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3453503A (en:Method) |
| BE (1) | BE679871A (en:Method) |
| DE (1) | DE1514008B2 (en:Method) |
| FR (1) | FR1477106A (en:Method) |
| GB (1) | GB1114362A (en:Method) |
| NL (1) | NL6605235A (en:Method) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3896486A (en) * | 1968-05-06 | 1975-07-22 | Rca Corp | Power transistor having good thermal fatigue capabilities |
| FR2007870B1 (en:Method) * | 1968-05-06 | 1975-01-10 | Rca Corp | |
| BE759583A (fr) * | 1970-02-20 | 1971-04-30 | Rca Corp | Transistor de puissance pour micro-ondes |
| US3602780A (en) * | 1970-02-20 | 1971-08-31 | Rca Corp | Radial high frequency power transistor employing peripheral emitter contact ring and high current base contact layer |
| US4035831A (en) * | 1975-04-17 | 1977-07-12 | Agency Of Industrial Science & Technology | Radial emitter pressure contact type semiconductor devices |
| US4236171A (en) * | 1978-07-17 | 1980-11-25 | International Rectifier Corporation | High power transistor having emitter pattern with symmetric lead connection pads |
| GB2026236B (en) * | 1978-07-20 | 1983-02-02 | Gen Electric | Power transistor |
| WO1982001103A1 (en) * | 1980-09-12 | 1982-04-01 | Inc Motorola | Emitter design for improved rbsoa and switching of power transistors |
| JPS57117276A (en) * | 1981-01-14 | 1982-07-21 | Hitachi Ltd | Semiconductor device |
| US4460913A (en) * | 1981-10-30 | 1984-07-17 | Rca Corporation | Fast switching transistor |
| GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
| DE3521059A1 (de) * | 1985-06-12 | 1986-12-18 | Vladimir Il'ič Minsk Kabanec | Zusammengesetzter transistor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3166448A (en) * | 1961-04-07 | 1965-01-19 | Clevite Corp | Method for producing rib transistor |
| US3214652A (en) * | 1962-03-19 | 1965-10-26 | Motorola Inc | Transistor comprising prong-shaped emitter electrode |
| US3309585A (en) * | 1963-11-29 | 1967-03-14 | Westinghouse Electric Corp | Junction transistor structure with interdigitated configuration having features to minimize localized heating |
| US3331001A (en) * | 1963-12-09 | 1967-07-11 | Philco Corp | Ultra-high speed planar transistor employing overlapping base and collector regions |
| US3325705A (en) * | 1964-03-26 | 1967-06-13 | Motorola Inc | Unijunction transistor |
| US3368123A (en) * | 1965-02-04 | 1968-02-06 | Gen Motors Corp | Semiconductor device having uniform current density on emitter periphery |
| US3287610A (en) * | 1965-03-30 | 1966-11-22 | Bendix Corp | Compatible package and transistor for high frequency operation "compact" |
-
1965
- 1965-04-22 DE DE19651514008 patent/DE1514008B2/de active Pending
-
1966
- 1966-03-21 US US535807A patent/US3453503A/en not_active Expired - Lifetime
- 1966-04-07 GB GB15567/66A patent/GB1114362A/en not_active Expired
- 1966-04-19 NL NL6605235A patent/NL6605235A/xx unknown
- 1966-04-22 BE BE679871D patent/BE679871A/xx unknown
- 1966-04-22 FR FR58639A patent/FR1477106A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3453503A (en) | 1969-07-01 |
| GB1114362A (en) | 1968-05-22 |
| FR1477106A (fr) | 1967-04-14 |
| DE1514008A1 (de) | 1969-08-07 |
| NL6605235A (en:Method) | 1966-10-24 |
| BE679871A (en:Method) | 1966-10-24 |
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