NL6605235A - - Google Patents
Info
- Publication number
- NL6605235A NL6605235A NL6605235A NL6605235A NL6605235A NL 6605235 A NL6605235 A NL 6605235A NL 6605235 A NL6605235 A NL 6605235A NL 6605235 A NL6605235 A NL 6605235A NL 6605235 A NL6605235 A NL 6605235A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ0027970 | 1965-04-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6605235A true NL6605235A (xx) | 1966-10-24 |
Family
ID=7203140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6605235A NL6605235A (xx) | 1965-04-22 | 1966-04-19 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3453503A (xx) |
| BE (1) | BE679871A (xx) |
| DE (1) | DE1514008B2 (xx) |
| FR (1) | FR1477106A (xx) |
| GB (1) | GB1114362A (xx) |
| NL (1) | NL6605235A (xx) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2007870B1 (xx) * | 1968-05-06 | 1975-01-10 | Rca Corp | |
| US3896486A (en) * | 1968-05-06 | 1975-07-22 | Rca Corp | Power transistor having good thermal fatigue capabilities |
| BE759583A (fr) * | 1970-02-20 | 1971-04-30 | Rca Corp | Transistor de puissance pour micro-ondes |
| US3602780A (en) * | 1970-02-20 | 1971-08-31 | Rca Corp | Radial high frequency power transistor employing peripheral emitter contact ring and high current base contact layer |
| US4035831A (en) * | 1975-04-17 | 1977-07-12 | Agency Of Industrial Science & Technology | Radial emitter pressure contact type semiconductor devices |
| US4236171A (en) * | 1978-07-17 | 1980-11-25 | International Rectifier Corporation | High power transistor having emitter pattern with symmetric lead connection pads |
| GB2026236B (en) * | 1978-07-20 | 1983-02-02 | Gen Electric | Power transistor |
| JPS57501407A (xx) * | 1980-09-12 | 1982-08-05 | ||
| JPS57117276A (en) * | 1981-01-14 | 1982-07-21 | Hitachi Ltd | Semiconductor device |
| US4460913A (en) * | 1981-10-30 | 1984-07-17 | Rca Corporation | Fast switching transistor |
| GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
| DE3521059A1 (de) * | 1985-06-12 | 1986-12-18 | Vladimir Il'ič Minsk Kabanec | Zusammengesetzter transistor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3166448A (en) * | 1961-04-07 | 1965-01-19 | Clevite Corp | Method for producing rib transistor |
| US3214652A (en) * | 1962-03-19 | 1965-10-26 | Motorola Inc | Transistor comprising prong-shaped emitter electrode |
| US3309585A (en) * | 1963-11-29 | 1967-03-14 | Westinghouse Electric Corp | Junction transistor structure with interdigitated configuration having features to minimize localized heating |
| US3331001A (en) * | 1963-12-09 | 1967-07-11 | Philco Corp | Ultra-high speed planar transistor employing overlapping base and collector regions |
| US3325705A (en) * | 1964-03-26 | 1967-06-13 | Motorola Inc | Unijunction transistor |
| US3368123A (en) * | 1965-02-04 | 1968-02-06 | Gen Motors Corp | Semiconductor device having uniform current density on emitter periphery |
| US3287610A (en) * | 1965-03-30 | 1966-11-22 | Bendix Corp | Compatible package and transistor for high frequency operation "compact" |
-
1965
- 1965-04-22 DE DE19651514008 patent/DE1514008B2/de active Pending
-
1966
- 1966-03-21 US US535807A patent/US3453503A/en not_active Expired - Lifetime
- 1966-04-07 GB GB15567/66A patent/GB1114362A/en not_active Expired
- 1966-04-19 NL NL6605235A patent/NL6605235A/xx unknown
- 1966-04-22 BE BE679871D patent/BE679871A/xx unknown
- 1966-04-22 FR FR58639A patent/FR1477106A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE679871A (xx) | 1966-10-24 |
| GB1114362A (en) | 1968-05-22 |
| FR1477106A (fr) | 1967-04-14 |
| DE1514008B2 (de) | 1972-12-07 |
| DE1514008A1 (de) | 1969-08-07 |
| US3453503A (en) | 1969-07-01 |