DE1464713A1 - Halbleiterbauelement mit einem Halbleiterkoerper aus Zonen aufeinanderfolgend wechselnden Leitfaehigkeitstyps oder Halbleitermaterials,insbesondere Transistor - Google Patents

Halbleiterbauelement mit einem Halbleiterkoerper aus Zonen aufeinanderfolgend wechselnden Leitfaehigkeitstyps oder Halbleitermaterials,insbesondere Transistor

Info

Publication number
DE1464713A1
DE1464713A1 DE19631464713 DE1464713A DE1464713A1 DE 1464713 A1 DE1464713 A1 DE 1464713A1 DE 19631464713 DE19631464713 DE 19631464713 DE 1464713 A DE1464713 A DE 1464713A DE 1464713 A1 DE1464713 A1 DE 1464713A1
Authority
DE
Germany
Prior art keywords
semiconductor
junction
zone
semiconductor component
component according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19631464713
Other languages
German (de)
English (en)
Inventor
Fan Frank Fu
Yu Hwa Nien
Tsu-Hsing Yeh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US237501A external-priority patent/US3369132A/en
Priority claimed from US239434A external-priority patent/US3369133A/en
Priority claimed from US244682A external-priority patent/US3278814A/en
Priority claimed from US246794A external-priority patent/US3229104A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1464713A1 publication Critical patent/DE1464713A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
DE19631464713 1962-11-14 1963-11-08 Halbleiterbauelement mit einem Halbleiterkoerper aus Zonen aufeinanderfolgend wechselnden Leitfaehigkeitstyps oder Halbleitermaterials,insbesondere Transistor Pending DE1464713A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US237501A US3369132A (en) 1962-11-14 1962-11-14 Opto-electronic semiconductor devices
US239434A US3369133A (en) 1962-11-23 1962-11-23 Fast responding semiconductor device using light as the transporting medium
US244682A US3278814A (en) 1962-12-14 1962-12-14 High-gain photon-coupled semiconductor device
US246794A US3229104A (en) 1962-12-24 1962-12-24 Four terminal electro-optical semiconductor device using light coupling

Publications (1)

Publication Number Publication Date
DE1464713A1 true DE1464713A1 (de) 1970-04-16

Family

ID=27499883

Family Applications (3)

Application Number Title Priority Date Filing Date
DE19631464713 Pending DE1464713A1 (de) 1962-11-14 1963-11-08 Halbleiterbauelement mit einem Halbleiterkoerper aus Zonen aufeinanderfolgend wechselnden Leitfaehigkeitstyps oder Halbleitermaterials,insbesondere Transistor
DE1464715A Expired DE1464715C3 (de) 1962-11-14 1963-11-21 Halbleiterbauelement mit einem Halbleiterkörper aus drei Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps
DE19631464720 Pending DE1464720A1 (de) 1962-11-14 1963-12-09 Halbleiterbauelement mit Photonenkopplung im Halbleiterkoerper

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE1464715A Expired DE1464715C3 (de) 1962-11-14 1963-11-21 Halbleiterbauelement mit einem Halbleiterkörper aus drei Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps
DE19631464720 Pending DE1464720A1 (de) 1962-11-14 1963-12-09 Halbleiterbauelement mit Photonenkopplung im Halbleiterkoerper

Country Status (6)

Country Link
BE (1) BE639961A (cs)
CA (2) CA928431A (cs)
CH (3) CH427066A (cs)
DE (3) DE1464713A1 (cs)
GB (2) GB1005989A (cs)
NL (2) NL143787C (cs)

Also Published As

Publication number Publication date
GB1005989A (en) 1965-09-29
CH427066A (de) 1966-12-31
BE639961A (cs)
DE1464715B2 (de) 1974-10-03
DE1464720A1 (de) 1968-11-07
CH433528A (de) 1967-04-15
DE1464715A1 (de) 1968-11-14
CA928432A (en) 1973-06-12
GB1010142A (en) 1965-11-17
DE1464715C3 (de) 1975-05-22
CA928431A (en) 1973-06-12
NL299170A (cs)
CH435476A (de) 1967-05-15
NL143787C (nl) 1974-10-15

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