GB1010142A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1010142A
GB1010142A GB4096363A GB4096363A GB1010142A GB 1010142 A GB1010142 A GB 1010142A GB 4096363 A GB4096363 A GB 4096363A GB 4096363 A GB4096363 A GB 4096363A GB 1010142 A GB1010142 A GB 1010142A
Authority
GB
United Kingdom
Prior art keywords
junction
region
radiation
regions
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4096363A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US237501A external-priority patent/US3369132A/en
Priority claimed from US239434A external-priority patent/US3369133A/en
Priority claimed from US244682A external-priority patent/US3278814A/en
Priority claimed from US246794A external-priority patent/US3229104A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1010142A publication Critical patent/GB1010142A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)

Abstract

1,010,142. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 17, 1963 [Nov. 23, 1962; Dec. 14, 1962], No. 40963/63. Heading H1K. A semi-conductor device includes a monocrystalline body having at least three regions defining two spatially separated junctions, one of which can emit recombination radiation which may be absorbed by the other with the emission of charge carriers, and electrodes connected to each of at least three of said regions. In one embodiment, Fig. 1 (not shown), the device is a simple PNP structure comprising N-type GaAs with Zn diffused into it to form the P-type regions and having a forward biased emitted-base junction which produces recombination radiation which, falling on the collectorbase junction, causes the emission of charge carriers to provide the collector current. In a modification, Fig. 3, the light emitting and absorbing junctions are on the same side of the base. Thus, a wafer 20 having N and P regions has a trough 24 etched in the N region to form a circular region 28 and an annular region 29, the junction of the former with the P-region being the light emitting junction and that between the latter and the P-region being the light absorbing junction. Some of the light transmission is direct, and the remainder by reflection from a metal coating 30. To avoid short circuiting the junction, the coating must be broken at this point, or alternatively the body may be covered with an insulating coating prior to adding the metal coating. In an alternative embodiment, Fig. 4, a forward-biased radiation emitting junction 38 is also provided on the collector side. Thus, collector current passing through this junction causes the emission of light to the radiation absorbing junction 37 in addition to that received from the emitter junction 36 so causing increased collector current. The device may be constructed by taking a P-type wafer of GaAs doped with Zn, growing epitaxially by vapour deposition N-type regions on each side of GaAs doped with Te, and finally diffusing zinc into the surface layer, so forming a PNPNP structure from which one of the P-type surface zones is then removed. Fig. 5 illustrates an embodiment working on similar lines, in which a PNP structure is obtained by diffusing Zn into an N-type wafer, and etching to produce a recess 45, which separates emitter from collector regions, a reflecting coating 48 being provided for the radiation from the junction 46. The collector contains a radiation emitting junction as in Fig. 4. Other modifications mentioned include (a) the use of a radiating junction in the collector region only, a conventional transistor configuration being used at the input, (b) the omission of the emitter region 32, Fig. 4, the radiation falling on the junction 37 from an external source, (c) the use of a tunnel diode junction for the base-emitter junction, (d) the use of structures having multiple collectors or emitters.
GB4096363A 1962-11-14 1963-10-17 Improvements in or relating to semiconductor devices Expired GB1010142A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US237501A US3369132A (en) 1962-11-14 1962-11-14 Opto-electronic semiconductor devices
US239434A US3369133A (en) 1962-11-23 1962-11-23 Fast responding semiconductor device using light as the transporting medium
US244682A US3278814A (en) 1962-12-14 1962-12-14 High-gain photon-coupled semiconductor device
US246794A US3229104A (en) 1962-12-24 1962-12-24 Four terminal electro-optical semiconductor device using light coupling

Publications (1)

Publication Number Publication Date
GB1010142A true GB1010142A (en) 1965-11-17

Family

ID=27499883

Family Applications (2)

Application Number Title Priority Date Filing Date
GB4074463A Expired GB1005989A (en) 1962-11-14 1963-10-16 Improvements in or relating to semiconductor devices
GB4096363A Expired GB1010142A (en) 1962-11-14 1963-10-17 Improvements in or relating to semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB4074463A Expired GB1005989A (en) 1962-11-14 1963-10-16 Improvements in or relating to semiconductor devices

Country Status (6)

Country Link
BE (1) BE639961A (en)
CA (2) CA928431A (en)
CH (3) CH427066A (en)
DE (3) DE1464713A1 (en)
GB (2) GB1005989A (en)
NL (2) NL143787C (en)

Also Published As

Publication number Publication date
CH435476A (en) 1967-05-15
NL299170A (en)
CA928432A (en) 1973-06-12
DE1464715B2 (en) 1974-10-03
BE639961A (en)
CH427066A (en) 1966-12-31
DE1464715C3 (en) 1975-05-22
NL143787C (en) 1974-10-15
CA928431A (en) 1973-06-12
CH433528A (en) 1967-04-15
DE1464720A1 (en) 1968-11-07
GB1005989A (en) 1965-09-29
DE1464713A1 (en) 1970-04-16
DE1464715A1 (en) 1968-11-14

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