DE1439215B2 - Leistungshalbleiterbauelement und Verfahren zum Herstellen desselben - Google Patents

Leistungshalbleiterbauelement und Verfahren zum Herstellen desselben

Info

Publication number
DE1439215B2
DE1439215B2 DE1439215A DES0083800A DE1439215B2 DE 1439215 B2 DE1439215 B2 DE 1439215B2 DE 1439215 A DE1439215 A DE 1439215A DE S0083800 A DES0083800 A DE S0083800A DE 1439215 B2 DE1439215 B2 DE 1439215B2
Authority
DE
Germany
Prior art keywords
power semiconductor
semiconductor component
zone
component according
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE1439215A
Other languages
German (de)
English (en)
Other versions
DE1439215A1 (de
Inventor
Eduard Prof. Zuerich Gerecke (Schweiz)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
Brown Boveri und Cie AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brown Boveri und Cie AG Switzerland filed Critical Brown Boveri und Cie AG Switzerland
Publication of DE1439215A1 publication Critical patent/DE1439215A1/de
Publication of DE1439215B2 publication Critical patent/DE1439215B2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Thyristors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE1439215A 1962-02-20 1963-02-18 Leistungshalbleiterbauelement und Verfahren zum Herstellen desselben Granted DE1439215B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH202162A CH414866A (de) 1962-02-20 1962-02-20 Aus p- und n-Schichten aufgebautes Gleichrichterelement

Publications (2)

Publication Number Publication Date
DE1439215A1 DE1439215A1 (de) 1968-10-17
DE1439215B2 true DE1439215B2 (de) 1973-10-18

Family

ID=4224045

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1439215A Granted DE1439215B2 (de) 1962-02-20 1963-02-18 Leistungshalbleiterbauelement und Verfahren zum Herstellen desselben
DE19631789155 Ceased DE1789155B1 (de) 1962-02-20 1963-02-18 Leistungshalbleiterbauelement und verfahren zum herstellen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19631789155 Ceased DE1789155B1 (de) 1962-02-20 1963-02-18 Leistungshalbleiterbauelement und verfahren zum herstellen

Country Status (6)

Country Link
AT (1) AT255569B (OSRAM)
BE (1) BE628619A (OSRAM)
CH (1) CH414866A (OSRAM)
DE (2) DE1439215B2 (OSRAM)
FR (1) FR1360744A (OSRAM)
GB (1) GB1031043A (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6603372A (OSRAM) * 1965-03-25 1966-09-26
DE1589529C3 (de) * 1967-06-19 1982-10-14 Robert Bosch Gmbh, 7000 Stuttgart Planartransistor
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
DE7328984U (de) * 1973-07-06 1975-05-15 Bbc Ag Brown Boveri & Cie Leistungshalbleiterbauelement
CH566643A5 (OSRAM) * 1973-10-11 1975-09-15 Bbc Brown Boveri & Cie
DE2358937C3 (de) * 1973-11-27 1976-07-15 Licentia Gmbh Thyristor fuer hochspannung im kilovoltbereich
DE102021116206B3 (de) * 2021-06-23 2022-09-29 Infineon Technologies Bipolar Gmbh & Co. Kg Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1067129B (OSRAM) * 1957-01-18

Also Published As

Publication number Publication date
DE1789155B1 (de) 1976-03-11
AT255569B (de) 1967-07-10
BE628619A (OSRAM)
GB1031043A (en) 1966-05-25
CH414866A (de) 1966-06-15
FR1360744A (fr) 1964-05-15
DE1439215A1 (de) 1968-10-17

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971
C3 Grant after two publication steps (3rd publication)
EF Willingness to grant licences