DE1299778C2 - Elektronisches festkoerperbauelement zum schalten - Google Patents
Elektronisches festkoerperbauelement zum schaltenInfo
- Publication number
- DE1299778C2 DE1299778C2 DE19651299778 DE1299778A DE1299778C2 DE 1299778 C2 DE1299778 C2 DE 1299778C2 DE 19651299778 DE19651299778 DE 19651299778 DE 1299778 A DE1299778 A DE 1299778A DE 1299778 C2 DE1299778 C2 DE 1299778C2
- Authority
- DE
- Germany
- Prior art keywords
- state
- arsenic
- tellurium
- silicon
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title claims 3
- 239000000203 mixture Substances 0.000 claims 15
- 229910052714 tellurium Inorganic materials 0.000 claims 11
- 229910052785 arsenic Inorganic materials 0.000 claims 9
- 229910052710 silicon Inorganic materials 0.000 claims 9
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 2
- LOPFACFYGZXPRZ-UHFFFAOYSA-N [Si].[As] Chemical group [Si].[As] LOPFACFYGZXPRZ-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 claims 2
- 230000008020 evaporation Effects 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 2
- 229910052740 iodine Inorganic materials 0.000 claims 2
- 239000011630 iodine Substances 0.000 claims 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000654 additive Substances 0.000 claims 1
- 238000002474 experimental method Methods 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 230000002427 irreversible effect Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/025—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet
- B41M5/06—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet using master sheets coated with jelly-like materials, e.g. gelatin
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Physical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED0047539 | 1965-06-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1299778C2 true DE1299778C2 (de) | 1974-11-14 |
| DE1299778B DE1299778B (de) | 1974-11-14 |
Family
ID=45002167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651299778 Expired DE1299778C2 (de) | 1965-06-18 | 1965-06-18 | Elektronisches festkoerperbauelement zum schalten |
Country Status (4)
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1351433A (fr) * | 1961-11-06 | 1964-02-07 | Western Electric Co | éléments électriques présentant au moins deux courbes de résistance caractéristiques |
-
1965
- 1965-06-18 DE DE19651299778 patent/DE1299778C2/de not_active Expired
-
1966
- 1966-05-26 BE BE681638D patent/BE681638A/fr unknown
- 1966-06-14 NL NL6608235A patent/NL6608235A/xx unknown
- 1966-06-15 FR FR65593A patent/FR1483423A/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1351433A (fr) * | 1961-11-06 | 1964-02-07 | Western Electric Co | éléments électriques présentant au moins deux courbes de résistance caractéristiques |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1299778B (de) | 1974-11-14 |
| FR1483423A (fr) | 1967-06-02 |
| BE681638A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1966-10-31 |
| NL6608235A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1966-12-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C2 | Grant after previous publication (2nd publication) |