DE1295702B - Halbleiterdiode - Google Patents
HalbleiterdiodeInfo
- Publication number
- DE1295702B DE1295702B DEK49200A DEK0049200A DE1295702B DE 1295702 B DE1295702 B DE 1295702B DE K49200 A DEK49200 A DE K49200A DE K0049200 A DEK0049200 A DE K0049200A DE 1295702 B DE1295702 B DE 1295702B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- resistance
- semiconductor
- diode
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000003466 welding Methods 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 description 13
- 239000012535 impurity Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- 229910001245 Sb alloy Inorganic materials 0.000 description 2
- 239000002140 antimony alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- LGFYIAWZICUNLK-UHFFFAOYSA-N antimony silver Chemical compound [Ag].[Sb] LGFYIAWZICUNLK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP965562 | 1962-03-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1295702B true DE1295702B (de) | 1969-05-22 |
Family
ID=11726214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEK49200A Pending DE1295702B (de) | 1962-03-15 | 1963-03-14 | Halbleiterdiode |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1295702B (enrdf_load_stackoverflow) |
| GB (1) | GB986507A (enrdf_load_stackoverflow) |
| NL (2) | NL126152C (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT181629B (de) * | 1950-09-14 | 1955-04-12 | Western Electric Co | Einrichtung zur Signalumsetzung mit einem Körper aus halbleitendem Material und Verfahren zur Herstellung derselben |
| GB883700A (en) * | 1958-09-02 | 1961-12-06 | Texas Instruments Inc | Improvements in and relating to transistors |
-
0
- NL NL290202D patent/NL290202A/xx unknown
- NL NL126152D patent/NL126152C/xx active
-
1963
- 1963-03-14 DE DEK49200A patent/DE1295702B/de active Pending
- 1963-03-15 GB GB10401/63A patent/GB986507A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT181629B (de) * | 1950-09-14 | 1955-04-12 | Western Electric Co | Einrichtung zur Signalumsetzung mit einem Körper aus halbleitendem Material und Verfahren zur Herstellung derselben |
| GB883700A (en) * | 1958-09-02 | 1961-12-06 | Texas Instruments Inc | Improvements in and relating to transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| NL126152C (enrdf_load_stackoverflow) | |
| NL290202A (enrdf_load_stackoverflow) | |
| GB986507A (en) | 1965-03-17 |
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