DE1286098B - Elektronische Relaisschaltung - Google Patents

Elektronische Relaisschaltung

Info

Publication number
DE1286098B
DE1286098B DEN31566A DEN0031566A DE1286098B DE 1286098 B DE1286098 B DE 1286098B DE N31566 A DEN31566 A DE N31566A DE N0031566 A DEN0031566 A DE N0031566A DE 1286098 B DE1286098 B DE 1286098B
Authority
DE
Germany
Prior art keywords
layer
transistor
circuit
output
electronic relay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DEN31566A
Other languages
German (de)
English (en)
Inventor
Aagaard Einar Andreas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1286098B publication Critical patent/DE1286098B/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1027Thyristors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Thyristor Switches And Gates (AREA)
  • Bipolar Integrated Circuits (AREA)
DEN31566A 1966-11-30 1967-11-08 Elektronische Relaisschaltung Withdrawn DE1286098B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6616834A NL6616834A (fr) 1966-11-30 1966-11-30

Publications (1)

Publication Number Publication Date
DE1286098B true DE1286098B (de) 1969-01-02

Family

ID=19798345

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN31566A Withdrawn DE1286098B (de) 1966-11-30 1967-11-08 Elektronische Relaisschaltung

Country Status (10)

Country Link
US (1) US3564291A (fr)
JP (1) JPS4828468B1 (fr)
AT (1) AT284250B (fr)
BE (1) BE707216A (fr)
CH (1) CH496369A (fr)
DE (1) DE1286098B (fr)
DK (1) DK119413B (fr)
GB (1) GB1213636A (fr)
NL (1) NL6616834A (fr)
SE (1) SE326730B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6908332A (fr) * 1969-05-30 1970-12-02
US3819867A (en) * 1971-10-12 1974-06-25 Gte Laboratories Inc Matrix employing semiconductor switching circuit
US3826873A (en) * 1971-10-12 1974-07-30 Gte Sylvania Inc Switching circuit employing latching type semiconductor devices and associated control transistors
US3737588A (en) * 1971-10-12 1973-06-05 Gte Sylvania Inc High speed semiconductor switching circuit
CH543178A (de) * 1972-03-27 1973-10-15 Bbc Brown Boveri & Cie Kontinuierlich steuerbares Leistungshalbleiterbauelement
US4200772A (en) * 1973-08-29 1980-04-29 Graphic Scanning Corp. Computer controlled telephone answering system
US4001866A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Monolithic, junction isolated photrac
US4001867A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Semiconductive devices with integrated circuit switches
JPS5759717B2 (fr) * 1974-12-27 1982-12-16 Hitachi Ltd
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5356865U (fr) * 1976-10-18 1978-05-15
JPS5391569U (fr) * 1976-12-24 1978-07-26
IL68659A0 (en) * 1983-05-11 1983-09-30 Tadiran Israel Elect Ind Ltd Rf power switches

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189783A (en) * 1963-03-25 1965-06-15 Zenith Radio Corp Switching arrangement for fast on-off switching of high amplitude current
US3299334A (en) * 1963-11-14 1967-01-17 Zenith Radio Corp Remote control system using a pair of semiconductor switches to effect bidirectionalcurrent flow in a control device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number Publication date
DK119413B (da) 1970-12-28
JPS4828468B1 (fr) 1973-09-01
NL6616834A (fr) 1968-05-31
US3564291A (en) 1971-02-16
SE326730B (fr) 1970-08-03
BE707216A (fr) 1968-05-28
CH496369A (de) 1970-09-15
GB1213636A (en) 1970-11-25
AT284250B (de) 1970-09-10

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee