AT284250B - Elektronische Relaisschaltung - Google Patents

Elektronische Relaisschaltung

Info

Publication number
AT284250B
AT284250B AT1067867A AT1067867A AT284250B AT 284250 B AT284250 B AT 284250B AT 1067867 A AT1067867 A AT 1067867A AT 1067867 A AT1067867 A AT 1067867A AT 284250 B AT284250 B AT 284250B
Authority
AT
Austria
Prior art keywords
relay circuit
electronic relay
electronic
circuit
relay
Prior art date
Application number
AT1067867A
Other languages
German (de)
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT284250B publication Critical patent/AT284250B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1027—Thyristors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Thyristor Switches And Gates (AREA)
  • Bipolar Integrated Circuits (AREA)
AT1067867A 1966-11-30 1967-11-27 Elektronische Relaisschaltung AT284250B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6616834A NL6616834A (fr) 1966-11-30 1966-11-30

Publications (1)

Publication Number Publication Date
AT284250B true AT284250B (de) 1970-09-10

Family

ID=19798345

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1067867A AT284250B (de) 1966-11-30 1967-11-27 Elektronische Relaisschaltung

Country Status (10)

Country Link
US (1) US3564291A (fr)
JP (1) JPS4828468B1 (fr)
AT (1) AT284250B (fr)
BE (1) BE707216A (fr)
CH (1) CH496369A (fr)
DE (1) DE1286098B (fr)
DK (1) DK119413B (fr)
GB (1) GB1213636A (fr)
NL (1) NL6616834A (fr)
SE (1) SE326730B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6908332A (fr) * 1969-05-30 1970-12-02
US3819867A (en) * 1971-10-12 1974-06-25 Gte Laboratories Inc Matrix employing semiconductor switching circuit
US3826873A (en) * 1971-10-12 1974-07-30 Gte Sylvania Inc Switching circuit employing latching type semiconductor devices and associated control transistors
US3737588A (en) * 1971-10-12 1973-06-05 Gte Sylvania Inc High speed semiconductor switching circuit
CH543178A (de) * 1972-03-27 1973-10-15 Bbc Brown Boveri & Cie Kontinuierlich steuerbares Leistungshalbleiterbauelement
US4200772A (en) * 1973-08-29 1980-04-29 Graphic Scanning Corp. Computer controlled telephone answering system
US4001866A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Monolithic, junction isolated photrac
US4001867A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Semiconductive devices with integrated circuit switches
JPS5759717B2 (fr) * 1974-12-27 1982-12-16 Hitachi Ltd
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5356865U (fr) * 1976-10-18 1978-05-15
JPS5391569U (fr) * 1976-12-24 1978-07-26
IL68659A0 (en) * 1983-05-11 1983-09-30 Tadiran Israel Elect Ind Ltd Rf power switches

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189783A (en) * 1963-03-25 1965-06-15 Zenith Radio Corp Switching arrangement for fast on-off switching of high amplitude current
US3299334A (en) * 1963-11-14 1967-01-17 Zenith Radio Corp Remote control system using a pair of semiconductor switches to effect bidirectionalcurrent flow in a control device

Also Published As

Publication number Publication date
DK119413B (da) 1970-12-28
JPS4828468B1 (fr) 1973-09-01
NL6616834A (fr) 1968-05-31
US3564291A (en) 1971-02-16
SE326730B (fr) 1970-08-03
BE707216A (fr) 1968-05-28
CH496369A (de) 1970-09-15
DE1286098B (de) 1969-01-02
GB1213636A (en) 1970-11-25

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee