DE1285551B - Transistorverstaerker, bestehend aus der Kaskadenschaltung eines Feldeffekttransistors und n Schichttransistoren (n mindestens gleich 1) mit hoher Steiheit und niedrigemKlirrfaktor - Google Patents
Transistorverstaerker, bestehend aus der Kaskadenschaltung eines Feldeffekttransistors und n Schichttransistoren (n mindestens gleich 1) mit hoher Steiheit und niedrigemKlirrfaktorInfo
- Publication number
- DE1285551B DE1285551B DE1967N0030448 DEN0030448A DE1285551B DE 1285551 B DE1285551 B DE 1285551B DE 1967N0030448 DE1967N0030448 DE 1967N0030448 DE N0030448 A DEN0030448 A DE N0030448A DE 1285551 B DE1285551 B DE 1285551B
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- layer
- zone
- resistance
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 10
- 230000001681 protective effect Effects 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 230000002787 reinforcement Effects 0.000 claims 2
- 239000012190 activator Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 description 2
- 210000001217 buttock Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6606165A NL6606165A (US06633782-20031014-M00005.png) | 1966-05-06 | 1966-05-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1285551B true DE1285551B (de) | 1968-12-19 |
Family
ID=19796516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1967N0030448 Pending DE1285551B (de) | 1966-05-06 | 1967-05-03 | Transistorverstaerker, bestehend aus der Kaskadenschaltung eines Feldeffekttransistors und n Schichttransistoren (n mindestens gleich 1) mit hoher Steiheit und niedrigemKlirrfaktor |
Country Status (7)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2705276A1 (de) * | 1976-02-26 | 1977-09-01 | Tokyo Shibaura Electric Co | Konstantstromschaltung |
-
1966
- 1966-05-06 NL NL6606165A patent/NL6606165A/xx unknown
-
1967
- 1967-05-03 AT AT414667A patent/AT266214B/de active
- 1967-05-03 CH CH627867A patent/CH463578A/de unknown
- 1967-05-03 DE DE1967N0030448 patent/DE1285551B/de active Pending
- 1967-05-03 ES ES340095A patent/ES340095A1/es not_active Expired
- 1967-05-04 GB GB2071467A patent/GB1189453A/en not_active Expired
- 1967-05-05 BE BE698090D patent/BE698090A/xx unknown
Non-Patent Citations (1)
| Title |
|---|
| None * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2705276A1 (de) * | 1976-02-26 | 1977-09-01 | Tokyo Shibaura Electric Co | Konstantstromschaltung |
Also Published As
| Publication number | Publication date |
|---|---|
| ES340095A1 (es) | 1968-06-01 |
| GB1189453A (en) | 1970-04-29 |
| CH463578A (de) | 1968-10-15 |
| NL6606165A (US06633782-20031014-M00005.png) | 1967-11-07 |
| BE698090A (US06633782-20031014-M00005.png) | 1967-11-06 |
| AT266214B (de) | 1968-11-11 |
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