DE1254773B - Anschlusskoerper fuer Halbleiterbauelemente - Google Patents
Anschlusskoerper fuer HalbleiterbauelementeInfo
- Publication number
- DE1254773B DE1254773B DES71091A DES0071091A DE1254773B DE 1254773 B DE1254773 B DE 1254773B DE S71091 A DES71091 A DE S71091A DE S0071091 A DES0071091 A DE S0071091A DE 1254773 B DE1254773 B DE 1254773B
- Authority
- DE
- Germany
- Prior art keywords
- plate
- shaped
- connection
- recesses
- shaped part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 48
- 238000003466 welding Methods 0.000 claims description 45
- 239000004020 conductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 16
- 230000000694 effects Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims 1
- 210000002435 tendon Anatomy 0.000 claims 1
- 230000035882 stress Effects 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 208000031872 Body Remains Diseases 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 208000007271 Substance Withdrawal Syndrome Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL270438D NL270438A (en, 2012) | 1960-11-02 | ||
| DES71091A DE1254773B (de) | 1960-11-02 | 1960-11-02 | Anschlusskoerper fuer Halbleiterbauelemente |
| FR877460A FR1304795A (fr) | 1960-11-02 | 1961-10-30 | Corps de raccordement pour dispositifs semi-conducteurs |
| CH1261961A CH419349A (de) | 1960-11-02 | 1961-10-31 | Halbleiterbauelement mit einem elektrischen Anschlusskörper |
| GB39340/61A GB992588A (en) | 1960-11-02 | 1961-11-02 | Semi-conductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES71091A DE1254773B (de) | 1960-11-02 | 1960-11-02 | Anschlusskoerper fuer Halbleiterbauelemente |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1254773B true DE1254773B (de) | 1967-11-23 |
Family
ID=7502230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES71091A Pending DE1254773B (de) | 1960-11-02 | 1960-11-02 | Anschlusskoerper fuer Halbleiterbauelemente |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH419349A (en, 2012) |
| DE (1) | DE1254773B (en, 2012) |
| GB (1) | GB992588A (en, 2012) |
| NL (1) | NL270438A (en, 2012) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3546543A (en) * | 1968-08-30 | 1970-12-08 | Nat Beryllia Corp | Hermetically sealed electronic package for semiconductor devices with high current carrying conductors |
| EP0022359A1 (en) * | 1979-07-04 | 1981-01-14 | Westinghouse Brake And Signal Company Limited | Semiconductor contact shim, attachment method and semiconductor device including a contact shim |
| US5739556A (en) * | 1995-02-17 | 1998-04-14 | Asea Brown Boveri Ag | Pressure contact housing for semiconductor components |
| DE10335111A1 (de) * | 2003-07-31 | 2005-03-10 | Infineon Technologies Ag | Montageverfahren für ein Halbleiterbauteil |
| DE102009039227B4 (de) * | 2008-08-28 | 2015-06-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4326663A (en) | 1978-07-20 | 1982-04-27 | Eltec Instruments, Inc. | Pyroelectric detector |
| US4218620A (en) | 1978-07-20 | 1980-08-19 | Eltec Instruments, Inc. | Pyroelectric detector having improved suspension means |
| CN103056639B (zh) * | 2012-12-31 | 2015-04-22 | 中国科学院自动化研究所 | 径向张开装置作用件的定位方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT187598B (de) * | 1954-04-07 | 1956-11-10 | Int Standard Electric Corp | Kristallgleichrichter oder Kristallverstärker |
| FR1205947A (fr) * | 1957-04-18 | 1960-02-05 | Siemens Ag | Procédé de réalisation d'une connexion entre un conducteur électrique de jonction et l'électrode d'un élément semi-conducteur et élément semi-conducteur fabriqué d'après ce procédé, avec un conducteur de jonction |
| FR1213484A (fr) * | 1958-08-04 | 1960-04-01 | Thomson Houston Comp Francaise | Milieu conducteur non isotrope pour flux thermique intense |
-
0
- NL NL270438D patent/NL270438A/xx unknown
-
1960
- 1960-11-02 DE DES71091A patent/DE1254773B/de active Pending
-
1961
- 1961-10-31 CH CH1261961A patent/CH419349A/de unknown
- 1961-11-02 GB GB39340/61A patent/GB992588A/en not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT187598B (de) * | 1954-04-07 | 1956-11-10 | Int Standard Electric Corp | Kristallgleichrichter oder Kristallverstärker |
| FR1205947A (fr) * | 1957-04-18 | 1960-02-05 | Siemens Ag | Procédé de réalisation d'une connexion entre un conducteur électrique de jonction et l'électrode d'un élément semi-conducteur et élément semi-conducteur fabriqué d'après ce procédé, avec un conducteur de jonction |
| FR1213484A (fr) * | 1958-08-04 | 1960-04-01 | Thomson Houston Comp Francaise | Milieu conducteur non isotrope pour flux thermique intense |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3546543A (en) * | 1968-08-30 | 1970-12-08 | Nat Beryllia Corp | Hermetically sealed electronic package for semiconductor devices with high current carrying conductors |
| EP0022359A1 (en) * | 1979-07-04 | 1981-01-14 | Westinghouse Brake And Signal Company Limited | Semiconductor contact shim, attachment method and semiconductor device including a contact shim |
| WO1981000172A1 (en) * | 1979-07-04 | 1981-01-22 | Westinghouse Brake & Signal | Semiconductor contact shim and attachment method |
| US5739556A (en) * | 1995-02-17 | 1998-04-14 | Asea Brown Boveri Ag | Pressure contact housing for semiconductor components |
| DE10335111A1 (de) * | 2003-07-31 | 2005-03-10 | Infineon Technologies Ag | Montageverfahren für ein Halbleiterbauteil |
| DE10335111B4 (de) * | 2003-07-31 | 2006-12-28 | Infineon Technologies Ag | Montageverfahren für ein Halbleiterbauteil |
| US7323359B2 (en) | 2003-07-31 | 2008-01-29 | Infineon Technologies Ag | Mounting method for a semiconductor component |
| DE102009039227B4 (de) * | 2008-08-28 | 2015-06-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements |
Also Published As
| Publication number | Publication date |
|---|---|
| NL270438A (en, 2012) | 1900-01-01 |
| CH419349A (de) | 1966-08-31 |
| GB992588A (en) | 1965-05-19 |
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